SOT-353 MARK VA Search Results

TVS SOD-723

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Capacitance Q uad Array for ESD Protection General Description This integrated transient voltage suppressor device TVS is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers,

mark 642 sot 363

Abstract: mark 642 sot 6 EN6100-4 SC-75 mark tw sot323 mark us sot-563
Contextual Info: ESDA6V1-5P6 5-Line TVS Array Power Dissipation 150m Watts Reverse Working Voltage 6.1 VOLTS P b Lead Pb -Free Features: * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV * MIL STD 883E-Method 3015-7: class 3

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

sot-23 single diode mark PD

Abstract: LN2302LT1G SC-75 LN2302LT3G mark 642 sot 6 mark 642 sot 363 single diode sot-23 mark pd SOT23 MARKING N02 MARK LTRA SOT23
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET LN2302LT1G VDS= 20V RDS ON , Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115mΩ 3 1 2 Features SOT– 23 (TO–236AB) High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM

LP4101LT1G

Abstract: P41 sot-23 mark 642 sot 363 MARKING d1 sot-723 SC-75 SOT-353 MARKING 8v sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP4101LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LP2301LT1G

Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

ln2312

Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

LN2312LT1G

Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance

SC-75

Abstract: sod-323 kn MARKING kn SOd323 SOD-323 marking KN sot-23 single diode mark PD L2SK3019LT1G code marking 2M sot-23 MOSFET l2sk3019
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-Channel MOSFET L2SK3019LT1G Applications 3 Interfacing,switching 30V,100mA 1 Features 2 Low on-resistance SOT– 23 Fast switching speed Low voltage drive(2.5V) makes this ideal for portable equipment Equivalent circuit

conclusion of zener diode voltage report

Abstract: 1314 MARKING DIODE lrc zener diode
Contextual Info: 乐山无线电股份有限公司 Leshan Radio Company, Ltd. 产 品 规 格 书 Specification of Products Samsung VD TO CUSTOMER CUSTOMER P.N. LRC P.N. LRC099-04BT1G DESCRIPTION SC-70-6 ESD Protection Array APPROVE BY 接受印 ACKNOWLEDGEMENT 兹证明此份资料已经收到

Contextual Info: 19-1434; Rev 1; 5/99 Low-Cost, SOT23, Voltage-Output, High-Side Current-Sense Amplifier The MAX4173 low-cost, precision, high-side currentsense amplifier is available in a tiny SOT23-6 package. It features a voltage output that eliminates the need for gain-setting resistors and it is ideal for today’s notebook

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

EB202

Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
Contextual Info: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF

306 smd marking

Abstract: IC Ensemble MARKING SMD TRANSISTOR DQ SMD TRANSISTOR MARKING 9f TRANSISTOR BC 187 TRANSISTOR SMD MARKING CODE W25 PN133 transistor smd marking H sot 23-5 marking code H5 SMD MARKING CODE transistor j3
Contextual Info: P re li mi n a r y Da t a S h e e t , D S 1 . 2 , J a n u a r y 1 4 , 20 0 1 ABMP ATM Buffer Manager ABMP 2.1 DATACOM N e v e r s t o p t h i n k i n g . Edition 2001-14-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

Diode SOT-23 marking 15d

Abstract: pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A
Contextual Info: BRD8009/D Rev. 1, Apr-2001 Transient Voltage Suppression Devices Transient Voltage Suprression Devices 04/01 BRD8009 REV 1 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev. 1, Apr–2001  SCILLC, 2001 Previous Edition  1999 “All Rights Reserved’’

Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM26-10120-1E F2MC-8FX 8-BIT MICROCONTROLLER MB95200H/210H Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95200H/210H Series HARDWARE MANUAL The information for microcontroller supports is shown in the following homepage.

DH 636

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM26-10112-1E F2MC-8FX 8-BIT MICROCONTROLLER MB95100B/AM Series HARDWARE MANUAL 2 F MC-8FX 8-BIT MICROCONTROLLER MB95100B/AM Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM26-10113-1E F2MC-8FX 8-BIT MICROCONTROLLER MB95130/M Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95130/M Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

uart baud rate

Abstract: 451 80 N02
Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM26-10114-3E F2MC-8FX 8-BIT MICROCONTROLLER MB95140/M Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95140/M Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site.

Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM26-10124-3E F2MC-8FX 8-BIT MICROCONTROLLER MB95260H/270H/280H Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95260H/270H/280H Series HARDWARE MANUAL FUJITSU MICROELECTRONICS LIMITED PREFACE • The Purpose and Intended Readership of This Manual

MB95F136

Abstract: PC01 DU03 MB95F136MB
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM26-10118-1E F2MC-8FX 8-BIT MICROCONTROLLER MB95130/MB Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95130/MB Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

Contextual Info: FUJITSU MICROELECTRONICS CONTROLLER MANUAL CM26-10118-2E F2MC-8FX 8-BIT MICROCONTROLLER MB95130/MB Series HARDWARE MANUAL F2MC-8FX 8-BIT MICROCONTROLLER MB95130/MB Series HARDWARE MANUAL For the information for microcontroller supports, see the following web site.