LN2312 Search Results
LN2312 Price and Stock
LRC Leshan Radio Co Ltd LN2312LT1G20V N-Channel Enhancement-Mode MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LN2312LT1G | 14,320 |
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LRC Leshan Radio Co Ltd LN2312LT1 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LN2312LT1 | 14,120 |
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LN2312 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. LN2312LT1G ▼ Capable of 2.5V gate drive ▼ Lower on-resistance 3 ▼ Surface mount package ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS |
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ln2312lt1g236ab | |
ln2312Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G 3 Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance |
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ln2312lt1g236ab195mm150mm+6 | |
LN2312LT1G
Abstract: LN2312LT3G mark 642 sot 363 SC-75 SOT-353 MARKING 8v SOT-353 vg
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ln2312lt1g236ab3000/tapeln2312lt3g+8 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET VDS= 20V RDS ON , Vgs@4.5V, Ids@5.0A = 41mΩ RDS(ON), Vgs@2.5V, Ids@4.5A = 47mΩ Features LN2312LT1G S-LN2312LT1G 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance |
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ln2312lt1gs-ln2312lt1g236abaec-q101+2 | |
2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
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zmm22zmm24zmm27zmm43+11 |