LP2301LT1G Search Results

LP2301LT1G Datasheets (1)

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Leshan Radio Company

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
LP2301LT1G		Leshan Radio Company	20V P-Channel Enhancement-Mode MOSFET	Original	PDF	768.16KB	5

LP2301LT1G Price and Stock

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LRC Leshan Radio Co Ltd


LRC Leshan Radio Co Ltd LP2301LT1G /O1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	LP2301LT1G /O1		98,200			1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
LRC Leshan Radio Co Ltd LP2301LT1G 20V P-Channel Enhancement-Mode MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	LP2301LT1G		94,350			1 - 10 - 100 - 1000 - 10000 $0.03	Buy Now

LP2301LT1G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. ▼ Simple Drive Requirement LP2301LT1G ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is available 3 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS	Original	lp2301lt1g 236ab	PDF
LP2301LT1G Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance	Original	lp2301lt1g 236ab 3000/tape lp2301lt3g +8000/tape 195mm 150mm 3000pcs/reel sc-75 sot-353 marking 8v 619 sot 23 sot-23 single diode mark pd	PDF
LP2301LT1G Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance	Original	lp2301lt1g 236ab 195mm 150mm +53000pcs/reel 8000pcs/reel ot-723 od-723 10reel/inner	PDF
Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G S-LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features 3 Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance	Original	lp2301lt1g s-lp2301lt1g 236ab aec-q101 +1ot-23	PDF
2x062h Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062 Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1	Original	zmm22 zmm24 zmm27 zmm43 +11zmm47 2x062h gk105 1ss216 gk104 smd transistors w06 d20sb80 smd marking 5as d25sb80 lrb706f-40t1g 2x062	PDF