SOT-23 MARKING LF Search Results

marking L2

Contextual Info: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43

Contextual Info: Central" Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. % SOT-23 CASE MAXIMUM RATINGS TA=25°C

R5 SOT23

Contextual Info: Central CBAS17 Semiconductor Corp. SURFACE MOUNT LOW VOLTAGE SILICON STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. MARKING CODE: A91 SOT-23 CASE

Contextual Info: Central Semiconductor Corp. C B AS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS

Contextual Info: Central' Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C

6050

Contextual Info: SIEMENS Silicon Switching Diode SMBD 6050 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 6050 s5A Q68000-A8439 Pin Configuration Package1) SOT-23 < i^ i s o-o ^ ' EHA07002 Maximum Ratings Parameter

Contextual Info: •URGE BAV99 vvvvw.surgecomponents.com Silicon Epitaxial Planar Switching Diode Fast switching in thick and thin-film circuits diode □— cr Marking Code: A7 SOT-23 Plastic Package Absolute Maximum Ratings T* - 25 °C Parameter Symbol Value Unit V rrm

M7A transistor

Abstract: transistor M7A Q62702-C2340
Contextual Info: SIEMENS BCR 169 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R1 = 4 .7 kii Type Marking Ordering Code Pin Configuration BCR 169 WSs Q62702-C2340 1=B Package 2=E 3=C SOT-23 Maximum Ratings

hm marking smd DIODE

Abstract: diode marking smd 7c
Contextual Info: RB401D Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions Units : mm 2 .9± 0.2 Features • available in SMD3 (SMD, SC-59) package (similar to SOT-23) • part marking, D3U

Contextual Info: SIEMENS BF 517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners Type Marking Ordering Code Pin Configuration BF 517 LRs Q62702-F42 1= B Package 2=E 3=C SOT-23 Maximum Ratings of any single Transistor Parameter Symbol Collector-emitter voltage

smd transistor marking code XC

Abstract: XC SMD MARKING
Contextual Info: B S S 169 I nf ine on technologies Preliminary Data SIPMOS Small-Signal Transistor • N channel • Depletion mode • High dynamic resistance Type ^DS BSS 169 100 V 0.12 A ñDS on Package Marking Ordering Code 12Q SOT-23 SFs Q67000-S322 Maximum Ratings

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Type ^DS BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 -0.13 A ß DS(on) Package Marking 10 Ü. SOT-23 SDs Tape and Reel Information

MARKING CODE 141

Abstract: 9p marking sot-23 diode L9
Contextual Info: Silicon PIN Diodes BAR 14-1 . BAR 16-1 • RF switch, RF attenuator • Low-distortion factor • Long-term stability of electrical characteristics Type Marking Ordering code tape and reel Pin configuration BAR 14-1 L7 Q 62702-A 7 7 2 3 Package SOT-23 1° M I W

Contextual Info: SIEMENS BSS 84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type ^DS BSS 84 -50 V Type BSS 84 BSS 84 Ordering Code Q62702-S568 Q67000-S243 -0.13 A ß DS(on) Package Marking io a SOT-23 SPs

marking K2 diode

Abstract: MARKING 5D DIODE schottky diode marking A7
Contextual Info: DIODE wffife SOT-23/TO-236AB ‘TM PD ’ GENERAL-PURPOSE a n d LOW-LEAKAGE D IO D ES ELECTRICAL CHARACTERISTICS a t T . = 25°C vF Description *rr Max. Max. nA (ns) <PF) 1 ,2 ,3 10 25 4.0 6.0 ANCK VBR Min. Max. Marking (mA) (V) (V) @IF (mA) 1.0 Device Type

B 1403 N

Contextual Info: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol

Contextual Info: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131

Contextual Info: SIEMENS SP 061OT SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = 0.-2.0V Type ^DS #D f lDS(on) Package Marking SP 061 OT -60 V -0.13 A io n SOT-23 sSF Type SP 061 OT Ordering Code Q67000-S088 Tape and Reel Information

marking sSH sot-23

Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information

1403

Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
Contextual Info: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.

L43 BAT54

Abstract: SC BAT54C SOT23 397-I L43 SOT-23
Contextual Info: DISCRETE POWER AND SIGNAL TECHNOLOGIES FAIRCHILD BAT54/A/C/S MICDNDUCTQR n CONNECTION PACKAGE | 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 2 NC BAT54C V I B A T 5 4 AN 3 *t i +n ^B A T^ SOT-23 TO-236AB Low DIAGRAMS 1 | 2 | BAT54S 2 1 Schottky Barrier Diode

MARKING SSG SOT23

Abstract: transistor marking 7002 TRANSISTOR 7002 marking code sSG SOT23
Contextual Info: SIEMENS SN 7002 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0-8.2.0V Pin 1 Pin 2 Pin 3 ~G Type VDS b f lDS(on) Package Marking SN 7002 60 V 0.19 A 5Ü SOT-23 sSG Type SN 7002 Ordering Code Q67000-S063

SmD TRANSISTOR a77

Abstract: smd marking code SSs
Contextual Info: BSS138 In fin e o n technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level ' ^GS th = 0.8.2.0V Pin 1 Pin 3 Pin 2 S G Type Vbs b ^D S (o n ) Package Marking BSS 138 50 V 0.22 A 3.5 Q SOT-23 SSs Type BSS 138 BSS 138