SOT-23 MACOM Search Results

V4 SOT-23

Abstract: sot-23 tAB ma-com sot sot-23 macom
Contextual Info: MA45400 Series Si Abrupt Tuning Varactor Diode M/A-COM Products Rev. V4 SOT-23 Features • Surface Mount Plastic Packages : SOT-23 • SPC Process for Superior C vs V and Q vs V Repeatability • Lead-Free RoHs Compliant equivalents available with 260°C reflow compatibility

varactor sot-23

Abstract: MACOM SOT23 MARK varactor diode 24V sot-23 tAB MA45441CK-287T MAVR-045436-12790T sot-23 macom ma45400 MA45446-287T
Contextual Info: MA45400 Series Si Abrupt Tuning Varactor Diode M/A-COM Products Rev. V5 SOT-23 Features SC-79 • Surface Mount Plastic Packages :SOT-23, SC-79 • SPC Process for Superior C vs V and Q vs V Repeatability • Lead-Free RoHs Compliant equivalents available with 260°C reflow compatibility

MACOM SOT23 MARK

Contextual Info: MA4ST200 Series Low-Voltage / High Q Si Hyperabrupt Varactors M/A-COM Products Rev. V3 Features • Surface Mount Packages SOT-23, SC70 3LD, SOD-323 • High Q at Low Voltages • High Capacitance Ratio at Low Voltages • SPC Process for Superior C-V Repeatability

macom marking

Abstract: MAcom device marking diode marking v6 V6 marking varactor diode
Contextual Info: MAVR-000200 Series Low-Voltage / High Q Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SOT-23, SC70 3LD, SOD-323, SC-79 • High Q at Low Voltages • High Capacitance Ratio at Low Voltages • SPC Process for Superior C-V Repeatability

Contextual Info: MA4ST079 thru MA4ST083 Series Surface Mount Hyperabrupt Wide-Band Tuning Varactors M/A-COM Products Rev. V6 Features SOT-23 • • • • • • Low Cost Very High Capacitance Ratio from 1 to 8 Volts Surface Mount Package High Quality Factor Useful for Battery Applications

MA44700

Abstract: MA144769-287T MAVR-044769 sot-23 macom step recovery diodes MA44768-287T MACOM STEP RECOVERY DIODES MA44769-287T step recovery diode application MA144769
Contextual Info: MA44700 Series Surface Mount Low Power Step Recovery Diodes M/A-COM Products Rev. V6 Absolute Maximum Ratings 1,2 @ TA=+25 °C Unless Otherwise Noted Features • • • • • • Surface Mount Packages (SOT-23,SC-79) Low transition times SPC Process for Superior C-V Repeatability

Contextual Info: MA44700 Series Surface Mount Low Power Step Recovery Diodes M/A-COM Products Rev. V6 Absolute Maximum Ratings 1,2 @ TA=+25 °C Unless Otherwise Noted Features • • • • • • Surface Mount Packages (SOT-23,SC-79) Low transition times SPC Process for Superior C-V Repeatability

step recovery diodes

Abstract: MA44769
Contextual Info: MA44700 Series Surface Mount Low Power Step Recovery Diodes M/A-COM Products Rev. V5 Absolute Maximum Ratings 1,2 @ TA=+25 °C Unless Otherwise Noted Features • • • • • • Surface Mount Packages (SOT-23,SC-79) Low transition times SPC Process for Superior C-V Repeatability

Transistor J438

Abstract: MRF21010 100B102JW
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

100B0R5BW

Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

10ACPR

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110

MRF21010

Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

capacitor 2200 micro M

Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

MRF21010

Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

j438

Abstract: MRF21010
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.

C-XM-99-001-01

Abstract: pep cxm MRF21010
Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

smd diode J476

Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Contextual Info: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

cdma Booster schematic

Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
Contextual Info: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….