SOT-23 DIODE MARKING T3 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode ƽ Pb-Free Package is available. LBAS16LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBAS16LT1G A6 SOT-23 3000/Tape&Reel LBAS16LT3G A6 SOT-23 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating

marking codes LXX 05

Abstract: SL05T1 SL05T1G SL05T3 SL15T1 SL15T1G SL15T3 SL24T1 SL24T1G SL24T3
Contextual Info: SL05T1 Series 300 Watt, SOT−23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

BU 508 transistor

Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
Contextual Info: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

SOT-23 MARKING 36m

Abstract: sm05t1g DIODE MARKING code SM05 dual diode sot-23 12m SZSM05T1G sot-23 diode marking t3 Zener Diode SOT-23
Contextual Info: SM05T1G Series, SZSM05T1G Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection http://onsemi.com These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They

dual diode sot-23 12m

Abstract: Zener Diode SOT-23 marking B ZENER DIODE MARKING CORE SOT-23 12m sot-23
Contextual Info: SM12T1 Preferred Device Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE Specification Features: • • • • • Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

Contextual Info: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for

DIODE MARKING code SM05

Abstract: SM15T1G
Contextual Info: SM05T1 Series Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times LBAV199LT1G . Pb-Free Package is Available. 3 2 CATHODE 1 ANODE 1 3 CAHODE/ANODE 2 CASE 318–08, STYLE 11

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode LBAV99LT1G • Pb−Free Package is Available. 3 DEVICE MARKING ORDERING INFORMATION . Device Marking Shipping LBAV99LT1G A7 3000 Tape & Reel LBAV99LT3G A7 10000 Tape & Reel 1 2 2 CATHODE 1 ANODE 3 CAHODE/ANODE

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G

Contextual Info: LESHAN RADIO COMPANY, LTD. Power MOSFET 750 mAmps, 20 Volts LMGSF1N02LT1G N–Channel SOT–23 These miniature surface mount MOSFETs low RDS on assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical

476A diode

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode LBAL99LT1G Featrues Pb-Free Package is Available. Ordering Information Device 3 Marking Shipping 1 LBAL99LT1G JF 3000/Tape&Reel LBAL99LT3G JF 10000/Tape&Reel 2 CASE 318–08, STYLE 18 SOT–23 TO–236AB MAXIMUM RATINGS

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel

SOT-353 MARKING 8v

Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ