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    SOT-23 DIODE MARKING CODE T3 Search Results

    SOT-23 DIODE MARKING CODE T3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    SOT-23 DIODE MARKING CODE T3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking codes LXX 05

    Abstract: SL05T1 SL05T1G SL05T3 SL15T1 SL15T1G SL15T3 SL24T1 SL24T1G SL24T3
    Contextual Info: SL05T1 Series 300 Watt, SOT−23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution


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    SL05T1 OT-23 SL05T1/D marking codes LXX 05 SL05T1G SL05T3 SL15T1 SL15T1G SL15T3 SL24T1 SL24T1G SL24T3 PDF

    Contextual Info: NUP1301ML3T1 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    NUP1301ML3T1 NUP1301ML3T1 IEC61000â NUF1301ML3T1/D PDF

    NUP1301ML3T1G

    Abstract: SZNUP1301ML3T1G
    Contextual Info: NUP1301ML3T1G, SZNUP1301ML3T1G Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1G is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    NUP1301ML3T1G, SZNUP1301ML3T1G NUP1301ML3T1G JESD22 OT-23 IEC61000-4-2 NUP1301ML3T1/D PDF

    NUP1301ML3T1

    Abstract: JESD22 NUP1301ML3T1G
    Contextual Info: NUP1301ML3T1 Low Capacitance Diode Array for ESD Protection in a Single Data Line NUP1301ML3T1 is a MicroIntegration device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD electrostatic discharge .


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    NUP1301ML3T1 NUP1301ML3T1 IEC61000-4-2 OT-23 NUF1301ML3T1/D JESD22 NUP1301ML3T1G PDF

    VH22

    Abstract: A114 A115 C101 JESD22 MC74VHC1G02 MC74VHC1G04DFT1
    Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NOR Gate MC74VHC1G02 The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G02 MC74VHC1G02 MC74VHC1G04DFT1 MC74VHC1G04DFT2 MC74VHC1G04DFT4 MC74VHC1G04DTT1 MC74VHC1G04DTT3 70/SC VH22 A114 A115 C101 JESD22 MC74VHC1G04DFT1 PDF

    L74VHC1GT08

    Abstract: 74VHC1GT08 t08 sot-23 MARKING OK t08 SOT L74VHC1GT08DFT1 marking code t08 VHC1GT08 marking code 10 sot23 A114
    Contextual Info: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with LSTTL–Compatible Inputs L74VHC1GT08 The L74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.


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    L74VHC1GT08 L74VHC1G08 L74VHC1GT08 74VHC1GT08 t08 sot-23 MARKING OK t08 SOT L74VHC1GT08DFT1 marking code t08 VHC1GT08 marking code 10 sot23 A114 PDF

    L74VHC1GT05

    Abstract: MARKING CODE t05 SOT-23 T05 Package marking code 10 sot23 sot23-5 transistor T1 transistor marking t05 transistor t05 A114 A115 C101
    Contextual Info: LESHAN RADIO COMPANY, LTD. Inverter with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT05 The L74VHC1GT05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    L74VHC1GT05 L74VHC1GT05 MARKING CODE t05 SOT-23 T05 Package marking code 10 sot23 sot23-5 transistor T1 transistor marking t05 transistor t05 A114 A115 C101 PDF

    L74VHC1GT03

    Abstract: t03 package footprint marking T03 sot23 74vhc1gt03 0-15 v circuit sot23-5 transistor T1 A114 A115 C101 JESD22
    Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NOR Gate with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT03 The L74VHC1GT03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    L74VHC1GT03 L74VHC1GT03 t03 package footprint marking T03 sot23 74vhc1gt03 0-15 v circuit sot23-5 transistor T1 A114 A115 C101 JESD22 PDF

    LP2301LT1G

    Abstract: SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD
    Contextual Info: LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET LP2301LT1G VDS= -20V RDS ON , Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


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    LP2301LT1G 236AB) 3000/Tape LP2301LT3G 000/Tape 195mm 150mm 3000PCS/Reel LP2301LT1G SC-75 SOT-353 MARKING 8v 619 SOT 23 sot-23 single diode mark PD PDF

    Contextual Info: NL27WZ06 Product Preview Dual Inverter with Open Drain Outputs The NL27WZ06 is a high performance dual inverter with open drain outputs operating from a 2.3 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level.


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    NL27WZ06 NL27WZ06 r14525 NL27WZ06/D PDF

    A114

    Abstract: A115 C101 JESD22 MC74VHC1GT86
    Contextual Info: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


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    MC74VHC1GT86 MC74VHC1GT86 r14525 MC74VHC1GT86/D A114 A115 C101 JESD22 PDF

    MC74VHC1G08

    Contextual Info: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


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    MC74VHC1G08 MC74VHC1G08 353/SCâ r14525 MC74VHC1G08/D PDF

    Diode SOT-23 marking 15d

    Abstract: pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A
    Contextual Info: BRD8009/D Rev. 1, Apr-2001 Transient Voltage Suppression Devices Transient Voltage Suprression Devices 04/01 BRD8009 REV 1 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev. 1, Apr–2001  SCILLC, 2001 Previous Edition  1999 “All Rights Reserved’’


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    BRD8009/D Apr-2001 BRD8009 r14525 DLD601 Diode SOT-23 marking 15d pk 1n6 1.5KE THYRISTOR 308 f GGP DIODE 503 Power Board GDP 002 94V DIODE MARKING CODE SG 88A ZENER Diode SOT-23 marking 15D diode 1n6 1.5ke onsemi marking SK PK P6KE 200A PDF

    VHC1GT126

    Abstract: MARKING Dt3 diode DF4 DIODE A114 A115 C101 JESD22 MC74VHC1GT126 Marking dt3 sot
    Contextual Info: MC74VHC1GT126 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT126 is a single gate noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


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    MC74VHC1GT126 MC74VHC1GT126 r14525 MC74VHC1GT126/D VHC1GT126 MARKING Dt3 diode DF4 DIODE A114 A115 C101 JESD22 Marking dt3 sot PDF

    AN1124

    Abstract: HSMS-286x Series METAL DETECTOR circuit for make HSMS-286x IC RFID 2.45 GHz mark code t4 diode SCHOTTKY DIODE SOT-143 Microwave detector diodes chip diode 047 diode SMA marking code PB
    Contextual Info: Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-286x Series Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3 • High Detection Sensitivity:


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    HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 OT-363 SC70-6 5988-0970EN 5989-0480EN AN1124 HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz mark code t4 diode SCHOTTKY DIODE SOT-143 Microwave detector diodes chip diode 047 diode SMA marking code PB PDF

    T30N06VL

    Abstract: AN569 MTB30N06VL MTB30N06VLT4
    Contextual Info: MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power


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    MTB30N06VL r14525 MTB30N06VL/D T30N06VL AN569 MTB30N06VL MTB30N06VLT4 PDF

    SIEMENS tle 420

    Abstract: siemens dc motor IEP00898
    Contextual Info: SIEMENS 2-P h ase S tepper-M otor Driver TLE 4726 Overview Bipolar 1C Features • 2 x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step


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    2I24X GPS05144 SIEMENS tle 420 siemens dc motor IEP00898 PDF

    Contextual Info: TMP102 www.ti.com SBOS397C – AUGUST 2007 – REVISED OCTOBER 2012 Low Power Digital Temperature Sensor With SMBus /Two-Wire Serial Interface in SOT563 Check for Samples: TMP102 FEATURES DESCRIPTION • • • The TMP102 is a two-wire, serial output temperature


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    TMP102 SBOS397C OT563 TMP102 OT563 PDF

    Contextual Info: TMP102 www.ti.com . SBOS397B – AUGUST 2007 – REVISED OCTOBER 2008 Low Power Digital Temperature Sensor With SMBus /Two-Wire Serial Interface in SOT563


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    TMP102 SBOS397B OT563 OT563 PDF

    Contextual Info: TMP102 www.ti.com . SBOS397B – AUGUST 2007 – REVISED OCTOBER 2008 Low Power Digital Temperature Sensor With SMBus /Two-Wire Serial Interface in SOT563


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    TMP102 SBOS397B OT563 OT563 PDF

    Contextual Info: TMP102 www.ti.com . SBOS397B – AUGUST 2007 – REVISED OCTOBER 2008 Low Power Digital Temperature Sensor With SMBus /Two-Wire Serial Interface in SOT563


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    TMP102 SBOS397B OT563 OT563 PDF

    1E70

    Abstract: TMP102 TMP102AIDRLR TMP102AIDRLRG4 TMP275 TMP75 marking p7 sot563
    Contextual Info: TMP102 www.ti.com . SBOS397B – AUGUST 2007 – REVISED OCTOBER 2008 Low Power Digital Temperature Sensor With SMBus /Two-Wire Serial Interface in SOT563


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    TMP102 SBOS397B OT563 OT563 1E70 TMP102 TMP102AIDRLR TMP102AIDRLRG4 TMP275 TMP75 marking p7 sot563 PDF

    Contextual Info: TMP112 TM P1 12 www.ti.com . SBOS473B – MARCH 2009 – REVISED JUNE 2009 High-Accuracy, Low-Power, Digital Temperature Sensor


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    TMP112 SBOS473B OT563 TMP112 OT563 PDF

    n5 s101 transistor

    Abstract: pin diagram of Dual core cpu ATW SOT23 Si3016 MARKING A18 SOD123 H8 SOT-23 bav99 marking sot-23 KS SOD-123 marking code H6 SOT-23 bav99 code sot-23 marking code Ks
    Contextual Info: TMS320C54V90 EMBEDDED V.90 MODEM DSP SPRS165F − JULY 2001 − REVISED OCTOBER 2003 D Provides Two-Chip Modem Solution D Data Rates from 300 bps to 56 Kbps D Data Modulation Standards D V.90, V.34, V.32bis, V.32, V.22bis, V.22, V.23, V.21 and V.23 Reversible Minitel , Bell 212,


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    TMS320C54V90 SPRS165F 32bis, 22bis, 27ter 42bis n5 s101 transistor pin diagram of Dual core cpu ATW SOT23 Si3016 MARKING A18 SOD123 H8 SOT-23 bav99 marking sot-23 KS SOD-123 marking code H6 SOT-23 bav99 code sot-23 marking code Ks PDF