SOT-23 DIODE MARKING CODE T3 Search Results

ksd202

Abstract: ksd2025 2025 ct SDZ33V T3 sot-23
Contextual Info: SDZ33V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ33V Marking Package Code T3 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1

marking codes LXX 05

Abstract: SL05T1 SL05T1G SL05T3 SL15T1 SL15T1G SL15T3 SL24T1 SL24T1G SL24T3
Contextual Info: SL05T1 Series 300 Watt, SOT−23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

29 0826

Abstract: L05 SOT23 marking code L05 SOT 23 sot-23 diode marking t3 SL05 SL05T1 SL05T3 SL15T1 SL15T3 SL24
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

marking code L05 SOT 23

Abstract: MARKING L05 marking l05 sot-23 SL05T1-D L05 SOT-23 sot-23 DIODE marking code t3
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

MARKING L05

Abstract: sot-23 MARKING CODE NC tvs MARKING CODE LAYOUT SOT23 marking code L05 SOT 23
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

SL05

Abstract: SL05T1 SL05T3 SL15T1 SL15T3 SL24 SL24T1 SL24T3 two line ESD Protection in SOT-23 TVS in SOT-23
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

marking codes LXX 05

Abstract: SL05T1G MARKING L05 SL24T1 SL24T1G SL05 SL05T1 SL12T1G SL15T1 SL15T1G
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

zener code l24

Abstract: SL12T1G
Contextual Info: SL05T1 Series 300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections This new family of TVS offers transient overvoltage protection with significantly reduced capacitance. The capacitance is lowered by integrating a compensating diode in series. This integrated solution

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Contextual Info: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does

diode T3 Marking

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

BU 508 transistor

Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
Contextual Info: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique

Contextual Info: SM05T1G Series, SZSM05T1G Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection http://onsemi.com These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They

DIODE MARKING code 05M

Abstract: sot-23 diode marking t3 Zener Diode SOT-23 marking B
Contextual Info: SM05T1 Series, SZSM05T1 Series Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection http://onsemi.com These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They

tfk 19

Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

TFK diode

Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Contextual Info: 17E D I ÖSSODSb DOOMS'} 3 m k l G G ^ ¡r milFWKSM electronic TFK 3080 D TELEFUNKEN ELECTRONIC C » « tiv « lK h f 0l09* tt [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T -3 3 ~ 3 r- Applications: • Motor-control 380 V-mains)

Contextual Info: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: SM05T1 Series Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection http://onsemi.com These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They

DIODE MARKING code SM05

Abstract: SM15T1G
Contextual Info: SM05T1 Series Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as

dual diode sot-23 12m

Abstract: Zener Diode SOT-23 marking B ZENER DIODE MARKING CORE SOT-23 12m sot-23
Contextual Info: SM12T1 Preferred Device Transient Voltage Suppressor Diode Array SOT−23 Dual Common Anode Zeners for ESD Protection http://onsemi.com PIN 1. CATHODE 2. CATHODE 3. ANODE Specification Features: • • • • • Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case

V = Device Code

Contextual Info: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

marking CODE W2D

Abstract: marking w2d
Contextual Info: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power