SOT-23 1P F Search Results

MARKING 1P

Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P

Transistor hFE CLASSIFICATION Marking CE

Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Contextual Info: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant

marking 1p sot23

Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
Contextual Info: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package

PN2222A

Abstract: 339 SOT23-3 bf255
Contextual Info: PN2222A / MMBT2222A / PZT2222A PN2222A MMBT2222A PZT2222A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 1P E C NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

transistor pn2222a

Abstract: CBVK741B019 F63TNR MMBT2222A PN2222A PN2222N PZT2222A D3000
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

MMBT2222A

Abstract: PN2222A PZT2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

CBVK741B019

Abstract: F63TNR MMBT2222A PN2222A PN2222N PZT2222A BF255 TF411 1P NPN transistor k 2847
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

transistor 2222a to-92

Abstract: 2222A fairchild transistor pn 2222a transistor C 6092 transistor 2222a NPN2222A PN2222A NPN SMALL SIGNAL PSPICE
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 B B SOT-23 E SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol

TF411

Abstract: t2222 PN2222A le TF-411
Contextual Info: ggM C O N O U C TO R PN2222A MMBT2222A PZT2222A SOT-23 SOT-223 Mark: 1P NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­ cess 19. Absolute Maximum RâtinÇjS

Contextual Info: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted

SOT-23 EBC

Abstract: MMBT2222A PN2222A PZT2222A IC 7403 mark PD sot 23 PN222
Contextual Info: MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. Absolute Maximum Ratings * Ta=25°C unless otherwise noted

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

BAW56

Abstract: BAV99
Contextual Info: BAW56 Discrete POWER & Signal Technologies N BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

PN2222A

Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

MMBD7000

Abstract: SOT23 JEDEC standard orientation pad size
Contextual Info: MMBD7000 MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 70 V

MMBD914

Contextual Info: MMBD914 Discrete POWER & Signal Technologies N MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75