SOD-23 MARKING CODE A2 Search Results

5bt1

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LUDZS*BT1G SERIES 200 mW SOD-323 Surface Mount 1 FEATURES ƽNon-wire bonding structure improves ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOD-323 ƽSilicon epitaxial planar

IGBT Battery 120 watt Charger circuit diagrams

Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Contextual Info: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000  SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84BxxxLT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device SOT– 23 (TO–236AB) PLASTIC CONSTRUCTION

Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount

SOT-353 MARKING 8v

Abstract: diode SM 88A MOSFET SC-59 power gs 069 SC-75 sot marking a1 353 marking 118 sot-323 marking 25 SOD-323 6C t marking code sot 23
Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N–Channel SOT–323 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

Contextual Info: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors FEATURE ƽPb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551WT1G G1 3000/Tape&Reel LMBT5551WT3G G1 10000/Tape&Reel LMBT5551WT1G 3 1 2 MAXIMUM RATINGS Rating

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

MAD130P

Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching

MPS5771

Abstract: MPS8093 bf391 2n3819 replacement MPS3640 equivalent MPF3821 MPS6595 MAD130P BC108 characteristic 2n3819 equivalent ic
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor MPS3640 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit Collector – Emitter Voltage VCEO –12 Vdc Collector – Base Voltage VCBO –12 Vdc Emitter – Base Voltage

Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistor LMBT3906DW1T1G 6 The LMBT3906DW1T1 device isa spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363

bf244

Abstract: MV211 BF256 BC237 2N2222A TO-92 MPS6568 bc547 equivalent BC308 bf246 motorola JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion J304 1 DRAIN 3 GATE 2 SOURCE 1 2 3 CASE 29–04, STYLE 5 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 30 Vdc Gate–Source Voltage

SSD1803

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1803 Product Preview 100 x 34 STN LCD Segment / Common Mono Driver with Controller This document contains information on a product under development. Solomon Systech reserves the right to change or discontinue this product without notice.

BAT54JFILM-H

Abstract: marking d88 sot23 SOD-23 marking code a2 SOD523 footprint code marking D73 sot23 BAT54JFILM BAT54SWFILM BAT54AFILM BAT54CFILM BAT54FILM
Contextual Info: BAT54 Small signal Schottky diodes Features BAT54ZFILM Single • Low conduction and reverse losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ Extremely fast switching ■ Surface mount device ■ Low capacitance diode

orient 817b

Abstract: UJT-2N2646 UJT-2N2646 PIN DIAGRAM DETAILS L 1011 817B CI 817b MDA2500 UJT 2N2646 Zener Diode SOT-23 929b 2N2646 pin diagram diode 913b
Contextual Info: DL150/D Rev. 2, May-2001 TVS/Zener Device Data PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

EM6607

Abstract: 14p marking 69H14 21 01 electric bicycle dc motor control marking 212 cmos Quartz 32768hz 102H 103H 104H EM6603
Contextual Info: R EM MICROELECTRONIC - MARIN SA EM6607 Ultra-low power microcontroller with 4 high drive outputs Features ‰ Low Power typical 1.8µA active mode typical 0.5µA standby mode typical 0.1µA sleep mode Figure 1. 32KHz Crystal Osc @ 1.5V, 32kHz, 25 °C ‰ ‰

Contextual Info: R EM MICROELECTRONIC - MARIN SA EM6607 Ultra-low power microcontroller with 4 high drive outputs Features ̌ Low Power typical 1.8µA active mode typical 0.5µA standby mode typical 0.1µA sleep mode Figure 1. 32KHz Crystal Osc @ 1.5V, 32kHz, 25 °C ̌ ̌