SO8 EP Search Results

91/157/AET

Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

ufdfpn8 footprint

Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Contextual Info: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8

TRANSISTOR BC 157 pin connection

Abstract: UA776 TRANSISTOR BC 157 transistor BC 247 BF247 sgs thomson Fets TRANSISTOR BC 313 1N4148 77603 UA776C
Contextual Info: UA776 PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIERS . . . MICROPOWER OPERATION NO FREQUENCY COMPENSATION REQUIRED WIDE PROGRAMMING RANGE HIGH SLEW RATE SHORT-CIRCUIT PROTECTION PROGRAMMABLE SINGLE OP-AMPs N DIP8 Plastic Package D SO8 (Plastic Micropackage)

ba 6730b

Contextual Info: SP7656 PowerBlox High-Voltage, Step-Down Converter in SO8-EP FEATURES „ Wide Input Voltage Range 4.5V – 29V „ 3 Amps Continuous 4A Peak Output Current „ Internal Compensation „ Input Feedforward Control improves Transient and Regulation „ 600kHz Constant Frequency Operation

f 4558

Abstract: 4558 RS 4558 ci 4558 4558 schematic diagram 4558 datasheet power amp 4558 4558 C 4558 d 4558 equivalent
Contextual Info: MC4558 WIDE BANDWIDTH DUAL BIPOLAR OPERATIONAL AMPLIFIERS INTERNALLY COMPENSATED SHORT–CIRCUIT PROTECTION GAIN AND PHASE MATCH BETWEEN AMPLIFIERS LOW POWER CONSUMPTION PIN TO PIN COMPATIBLE WITH MC1458/LM358 GAIN BANDWIDTH PRODUCT at 100kHz 5.5MHz D SO8

Contextual Info: A5972D Up to 1.5 A step-down switching regulator for automotive applications Datasheet - production data Application • Dedicated to automotive applications Description SO8 Features  Qualified following the AEC-Q100 requirements see PPAP for more details

MC1458

Abstract: mc1458 equivalent ua741 MC1558 MC1458 to99 mc1458 equivalent MC1458 a 1458I gyration MC1458H MC1458I
Contextual Info: MC1458 MC1558 DUAL OPERATIONAL AMPLIFIERS LOW POWER CONSUMPTION LARGE INPUT VOLTAGE RANGE NO LATCH-UP HIGH GAIN SHORT-CIRCUIT PROTECTION NO FREQUENCY COMPENSATION REQUIRED D SO8 Plastic Micropackage N DIP8 (Plastic Package) J CERDIP8 (Cerdip Package) DESCRIPTION

TSH31

Abstract: TSH31I TSH31C
Contextual Info: TSH31  280MHz BANDWIDTH MOS INPUT SINGLE OPERATIONAL AMPLIFIER . . . VERY LOW INPUT CURRENT : 2pA typ GAIN BANDWIDTH PRODUCT : 280MHz GAIN OF 2 STABILITY SLEW RATE : 300V/µs STANDARD PIN OUT N DIP8 Plastic Package D SO8 (Plastic Micropackage) DESCRIPTION

Contextual Info: A5970D Up to 1 A step-down switching regulator for automotive applications Datasheet - production data • Protection against feedback disconnection  Thermal shutdown Application  Dedicated to automotive applications SO8 Description Features  Qualified following the AEC-Q100

2f2a

Contextual Info: Freescale Semiconductor, Inc. Technical Data MC44BC380/D Rev. 1.3 09/2002 MC44BC380 Freescale Semiconductor, Inc. MC44BC380 VHF/ UHF ANTENNA BOOSTER/SPLITTER IC SO8 Package Ordering Information Device Temp. Range Package MC44BC380D, R2 -20°C to +85°C SO8NB

ir active bandpass filter circuit diagram

Abstract: ir preamplifier
Contextual Info: U 2537 B TELEFUNKEN Semiconductors IR Preamplifier Technology: Bipolar Case: SO8 Features: D Few external components D Low power consumption D Microcomputer compatible D Insensitive to ambient light, also in the case of continuous interference sources D output polarity programmable

TS462

Abstract: TS462C
Contextual Info: TS462  HIGH OUTPUT SWING DUAL OPERATIONAL AMPLIFIER . . HIGH DYNAMIC PERFORMANCE LOW NOISE LEVEL : 4nV/√ √Hz   LOW DISTORTION : 0.003% LARGE OUTPUT SWING ±2.4V @VCC = ±2.5V N DIP8 (Plastic Package) D SO8 (Plastic Micropackage)

TSH10

Abstract: TSH10I
Contextual Info: TSH10 140MHz BANDWIDTH LOW NOISE SINGLE OPERATIONAL AMPLIFIER . . . LOW NOISE : 6nV/√  Hz GAIN BANDWIDTH PRODUCT : 140MHz UNITY GAIN STABLE SLEW RATE : 150V/µs STANDARD PIN OUT N DIP8 Plastic Package D SO8 (Plastic Micropackage) DESCRIPTION

LM335 datasheet

Abstract: LM334 Cold-Junction Compensation LM335 LM335 free datasheet Transistor lm335 LM135-LM235-LM335 LM134-LM234 eps CONTROLLER lm335 equivalent data sheet Lm335
Contextual Info: LM135 LM235-LM335,A PRECISION TEMPERATURE SENSORS . . DIRECTLY CALIBRATED IN oK 1oC INITIAL ACCURACY OPERATES FROM 450µA TO 5mA LESS THAN 1Ω DYNAMIC IMPEDANCE Z TO92 Plastic Package D SO8 (Plastic Micropackage DESCRIPTION ORDER CODES Part number Temperature

lm336 pin diagram

Abstract: LM336 lm317 to92 Datasheet lm317 so8 lm336 datasheet equivalent lm336 lm317 TO92 1N457 equivalent equivalent diode for 1n457 lm336 shunt regulator pin diagram
Contextual Info: LM236,A LM336,B 2.5V VOLTAGE REFERENCES . . . LOW TEMPERATURE COEFFICIENT WIDE OPERATING CURRENT OF 400µA TO 10mA 0.2Ω DYNAMIC IMPEDANCE GUARANTEED TEMPERATURE STABILITY FAST TURN-ON Z TO92 Plastic Package D SO8 (Plastic Micropackage ORDER CODES Part numTemperature Range

transistor 1800MHz

Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

EC 401 TRANSISTOR

Abstract: Gan hemt transistor RFMD transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

transistor 1800MHz

Abstract: r.f. amplifier 30mhz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

rf3826

Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

404j

Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Contextual Info: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology

AOZ1022DIL

Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A DFN 4X4 AOZ1360DI 2P3M
Contextual Info: AOS Semiconductor Product Reliability Report AOZ1360AIL/DIL, rev 3 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 26, 2009 1 This AOS product reliability report summarizes the qualification result for AOZ1360AI/AIL (SO8

Contextual Info: ST1S40 3 A DC step-down switching regulator Datasheet - production data Applications • P/ASIC/DSP/FPGA core and I/O supplies  Point of load for: STB, TVs, DVD HSOP-8  Optical storage, hard disk drive, printers, audio/graphic cards SO8 VFQFPN 4 x 4

Contextual Info: ST1S31 3 A DC step-down switching regulator Datasheet - production data Applications • µP/ASIC/DSP/FPGA core and I/O supplies  Point of load for: STB, TVs, DVDs  Optical storage, hard disk drive, printers, audio/graphic cards VFDFPN 3 x 3 - 8L SO8

marking mosfet ea

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) MTMF8231 Silicon N-channel MOSFET For Li-ion battery protection circuit • Overview  Package  Code SO8-F1-B  Pin Name 1: Source 3: Source 5: Drain 7: Drain