transistor BP 109
Abstract: Si4420DY
Contextual Info: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .
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MS-012AA
Abstract: Si4410DY
Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
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Si4416DY
Abstract: SOT96- 1
Contextual Info: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .
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Contextual Info: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
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Si9410DY
Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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03ac29
Abstract: HZG336 MS-012AA PHN103T
Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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PSMN085-150K
Contextual Info: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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Si9925DY
Contextual Info: Si9925DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9925DY in SOT96-1 SO8 .
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DC TO DC convertor
Abstract: PSMN165-200K
Contextual Info: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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MS-012AA
Abstract: Si9956DY
Contextual Info: Si9956DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9956DY in SOT96-1 SO8 .
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SCA72
Abstract: Si9936DY MS-012AA
Contextual Info: Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9936DY in SOT96-1 SO8 .
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PSMN038-100K
Contextual Info: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.
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smd marking 1pn
Abstract: str 50112 PCF1252 marking 4814 so8 smd marking 9T PCF1252-1 PCF1252-2P smd so8 marking code PCF1252-1P/F4,112
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF1252-X family Threshold detector and reset generator Product specification Supersedes data of 1996 Jan 23 File under Integrated Circuits, IC11 1998 Apr 16 Philips Semiconductors Product specification Threshold detector and reset generator
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pcf1252-xpcf1252xsmd marking 1pnstr 50112+7pcf1252marking 4814 so8smd marking 9tpcf1252-1pcf1252-2psmd so8 marking codepcf1252-1p/f4,112
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Constant-Current LED Driver sot23
Abstract: LT3474 3474 mosfet so8 STEP-DOWN CONVERTER SO8 so8 842
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 842 36V STEP-DOWN 1A LED DRIVER LT3474 DESCRIPTION Demonstration circuit 842 features the LT 3474 constant frequency step-down converter in a compact 16-lead TSSOP thermally enhanced package. The demonstration circuit is designed to drive a single
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lt347416-leaddc842constant-current led driver sot23+43474mosfet so8step-down converter so8so8 842
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CA-02SJC-B
Abstract: laptop inverter board schematic Circuit Assembly CA-02SJC-B LM2661 LM2663 ESRD220M12B dcase LMK316BJ335ML-T schematic circuit of laptop inverter AN-1142
Contextual Info: National Semiconductor Application Note 1142 Clinton Jensen November 1999 Introduction The LM2663 comes in a SO-8 package and inverts the input voltage to provide up to 200mA of output current. It has a typical efficiency of 86% at 200mA output and a typical
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lm2663200ma150khzlm2661+9lm2664an-1142ca-02sjc-blaptop inverter board schematiccircuit assembly ca-02sjc-besrd220m12bdcaselmk316bj335ml-tschematic circuit of laptop inverter
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LM2661
Abstract: laptop inverter board schematic CA-02SJC-B AN-1142 LM2663 LM2664 MBR0520LT1 schematic circuit of laptop inverter
Contextual Info: National Semiconductor Application Note 1142 Clinton Jensen November 1999 Introduction The LM2661, LM2663, and LM2664 are part of a family of CMOS charge-pump voltage converters Table 2 . Each uses two small capacitors to achieve voltage inversion or voltage doubling without the cost, size, and EMI of inductor
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BLV909
Abstract: AN98017 BLV2042 BLV904
Contextual Info: APPLICATION NOTE Mounting consideration for SOT409 ceramic SO-8 devices AN98017 Philips Semiconductors Mounting consideration for SOT409 (ceramic SO-8) devices CONTENTS 1 INTRODUCTION 2 MOUNTING OF SOT409B DEVICES 3 HEATFLOW IN APPLICATION 4 IMPORTANT FACTORS FOR THERMAL
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laptop inverter board schematic
Abstract: CA-02SJC-B JMK316BJ106ML-T LM2661 schematic circuit of laptop inverter JMK316BJ106MLT AN-1142 LMK316BJ335ML LM2663 LM2664
Contextual Info: National Semiconductor Application Note 1142 Clinton Jensen July 2004 Introduction The LM2663 comes in a SO-8 package and inverts the input voltage to provide up to 200mA of output current. It has a typical efficiency of 86% at 200mA output and a typical output resistance of 3.5Ω. This circuit draws only 10µA of
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philips capacitor 1000uf 25V
Abstract: SO8 Wide Package TDA3662 TDA3663 TDA3663AT TDA3663T TDA3666
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3663 Very low dropout voltage/quiescent current 3.3 V voltage regulator Preliminary specification File under Integrated Circuits, IC01 1999 Sep 29 Philips Semiconductors Preliminary specification Very low dropout voltage/quiescent current
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tl4311
Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
Contextual Info: SG388CH/D 2000 4 2 SG388CH/D 2000 3 2 SCILLC,2000 © 1999 “” http://onsemi.com.cn SCI LLC ./012 !"#$%&'()*+,%?./14*+=* )NO @ A L M N O
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philips capacitor 1000uf 25V
Abstract: SO8 package SO8 Wide Package TDA3662 TDA3663 TDA3663AT TDA3663T TDA3666 capacitor mkt 344 MDA948
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3663 Very low dropout voltage/quiescent current 3.3 V voltage regulator Preliminary specification Supersedes data of 1999 Sep 29 File under Integrated Circuits, IC01 2000 Feb 01 Philips Semiconductors Preliminary specification
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P620 PHOTOCOUPLER
Abstract: p181 opto TLP185 TLP785 Opto Coupler p181 toshiba smd marking code transistor opto P181 opto coupler TLP250 opto coupler P421 P181 Photocoupler
Contextual Info: 2011-3 PRODUCT GUIDE Photocouplers and Photorelays SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Preface Extensive Line of Products As a type of isolator favored by manufacturers, photocouplers now serve as noise protectors in many electronic devices.
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