SO-8 GS 069 Search Results

Str W 5754

Abstract: cny 76 IRFK2D054 Str 5754 L1298 DIODE 76A e78996 india IRFK2F054 60788 772200
Contextual Info: Bulletin E2790 International Iîsr I Rectifier IRFK2D054, IRFK2F054 Isolated B ase Power H E X -p a k A s s e m b ly - Half Bridge Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

ST-2262

Abstract: machlett thyratron Ignitron 496 Scans-0017685 vacuum tubes ML7480A ML-7480A Raytheon Company NATIONAL ELECTRONIC TUBE company industrial tube company
Contextual Info: The M achlett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 ISSU E D 4-68 Tel. 203-348-7511 • TW X 710-474-1744 Ï □ G e n e ra l Purpose Triode 80 kW C W DESCRIPTION T h e M L -7 4 8 0 A is a general-purpose vapor-cooled triode conservatively design ed for 50-75 k W industrial heating

ML-5682

Abstract: machlett 5682 high power Triode for induction heating A-8485 5682K 1S20 550C machlett triode triode push-pull circuit tempilaq
Contextual Info: The M achlett Laboratories, Inc. 1063 Hope Street • Stamford, Conn. 06907 Tel. 203-348-7511 • TW X 203-327-2496 DESCRIPTION The M L -5682 is a general-purpose high-pow er triode su it­ able for use in A M , FM and T V broad castin g, dielectric and up to 140 k W w ith a w ater flow o f 60 gp m . T h e m axim um

APM4408

Abstract: J-STD-020A ON 4408
Contextual Info: APM4408 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/21A, RDS ON = 3.5mΩ(typ.) @ VGS = 10V RDS(ON) = 5mΩ(typ.) @ VGS = 4.5V RDS(ON) = 8mΩ(typ.) @ VGS = 2.5V • • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D High Density Cell Design Reliable and Rugged

4925 B

Abstract: 4925 B mosfet 4925 B transistor APM4925 8A330
Contextual Info: APM4925 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6.1A, RDS ON = 24mΩ(typ.) @ VGS = -10V S1 1 8 D1 Super High Density Cell Design G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 RDS(ON) = 30mΩ(typ.) @ VGS = -4.5V

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h e t e r o j u n c t io n f ie l d e f f e c t t r a n s is t o r / NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

q 1257

Contextual Info: SM F-06110 » ELECTRONICS G a in OptílYlíZGCl Sam sung M icrow ave Sem ico nd ucto r G aAs FET 2-14 GHz Description Features The S M F -0 6 1 10-100 is a packaged version of the SM F06100-100. The chip is a 600 |im n-channel M E S F E T with 0.5 |xm gate length, utilizing Sam sung M icrow ave’s gain

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Contextual Info: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that

APM9435

Abstract: 9435 mosfet 9435 so8 mosfet 9435 to 9435 sop-8 9435 power 9435 mosfet 9435 tr 9435 9435 so package
Contextual Info: APM9435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.6A, RDS ON = 52mΩ(typ.) @ VGS = -10V RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D

GS 069 LF

Abstract: HCA-120 BUK637-500A BUK637-500B BUK637-500C
Contextual Info: N AMER P H I L IPS /D IS CR ET E 55E D • Lb53T31 OQSQbôO S ■ PowerMOS transistor Fast Recovery Diode FET BUK637-500A BUK637-500B BUK637-500C T - 3 ‘M S ' GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a

9430 mosfet

Abstract: 9430 so-8 A102 APM9430
Contextual Info: APM9430 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/4A, RDS ON = 40mΩ(typ.) @ VGS = 4.5V RDS(ON) = 110mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4

GS431N

Contextual Info: Adjustable Precision Shunt Regulators Product Description Features The GS431 is a three-terminal adjustable shunt regulator with specified thermal stability.   The output voltage may be set to any value between VREF approximately 2.5V and 36V with two external resistors.

lg66a

Abstract: e78996 india E78996 rectifier module IRFK6H450 hex-pak IRFK6J450
Contextual Info: Bulletin E27113 International S Rectifier IRFK6H450JRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.

Contextual Info: 6427525 N E C ELECTRONICS INC_98D 18951 / N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR Tfi D E S C R IP T IO N D e | tiMS7S2S □□Ifl'iSl T | 2SK800 The 2 S K 8 0 0 is N-channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S

4430 mosfet

Abstract: mosfet 4430 ANPEC A102 APM4430 4430 8 pin ao 4430
Contextual Info: APM4430 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/23A , RDS ON =4.5mΩ(typ.) @ VGS=10V RDS(ON)=7mΩ(typ.) @ VGS=5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 5 4 6 3 7 2 8 1 Reliable and Rugged SO-8 Package

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

4835D

Abstract: 4835 D 4835 mosfet mosfet 4835 APM4835 APM4835 mosfet 7F MARKING 4835 so-8
Contextual Info: APM4835 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G

APM4427

Abstract: 4427 mosfet Ao 4427
Contextual Info: APM4427 P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4A , RDS ON =88mΩ(typ.) @ VGS=-10V RDS(ON)=147mΩ(typ.) @ VGS=-4.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • S 1 8 D S 2 7 D S 3 6 D G 4 5 D Reliable and Rugged

Contextual Info: ^5 4 ^0 2 ^ DD17A45 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1ST MGF1412B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 4 1 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use is S to X band ampli­ U n i t : m i l l i m e t e r s inches

Contextual Info: PD-91517A International I R Rectifier IRF2807 HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = 75V R ü S o n = 0 . 0 1 3 £ 2

transistor d 2389

Contextual Info: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

4435 mosfet

Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Contextual Info: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •

"MOSFET A5

Abstract: APM4410 4410 SO-8 4410 mosfet A102
Contextual Info: APM4410 N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/11.5A, RDS ON = 9mΩ(typ.) @ VGS = 10V RDS(ON) =14.5mΩ(typ.) @ VGS = 4.5V • • • High Density Cell Design Reliable and Rugged S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 Package SO − 8