SO 237 TRANSISTOR Search Results

Contextual Info: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­

BC478

Abstract: BC479 BC477 BC478-BC479 bc477 BC478 BC479
Contextual Info: - 3DE » • 7^5^237 □ D 3 Ü CI 1 3 H m I ^ T ’^ f - r o i _1 SG S -TH O M SO N MMlI [I[Li ïï[RMO©S G S BC477 B C478-BC479 S-THOMSON LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS D E S C R IP T IO N The BC477, BC478 and BC479 are silicon planar

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE

Contextual Info: S G S -1 H 0 M S 0 N D t g lÄ H lC T M O ig l A M 12 1 4 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

Contextual Info: G 7 S C S - T H O M S O N A T /. HigMilLlgTOMOtgl_ AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS • REFRACTORY/GOLD METALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE ■ IN PU T/O U TPU T MATCHING

Contextual Info: /= 7 SGS-THOMSON * 7 # . IMígia@HlL[l TO@iDigl_ AM82731-025 RF & MICROWAVE TRANSISTORS _ _ S-BAND RADAR APPLICATIONS I LOW PARASITIC, DOUBLE LEVEL MET­ AL DESIGN » REFRACTORY/GOLD METALLIZATION . EM ITTER SITE BALLASTED •

2SA10150

Abstract: SO-160
Contextual Info: CONTINENTAL DEVICE INDIA b3E D • 23033^4 DGDG1S3 b3b B K D I L - TO-92 PLASTIC PACKAGE TRANSISTORS PNP Maximum Ratings Typ« No. 2SA537 VC80 (V) Un 60 VCEO VEBO (V) (V) Un Un 50 5 Electrical Characteristics 'CBO (UA) VC8

SELECTRO

Contextual Info: SCS-THOMSON lE C T G Ä D tg i M S C 8 0 1 86 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS • EMITTER BALLASTED . CLASS A LINEAR OPERATION . COMMON EMITTER . VSWR CAPABILITY 15:1 @ RATED CONDITIONS . ft 3.2 GHz TYPICAL . NOISE FIGURE 12.5 dB @ 2 GHz

welding equipment smps schematic

Contextual Info: rZ Ä Z S G S -1 H 0 M S 0 N 7 # M D C H O iL ie T IS iS fflD e S S T E 1 1 0 N A 2 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TY P E V dss S T E 1 10NA20 • . . . . . . . . 200 V RDS on < 0 .0 19 Id a 110 A TYPICAL FtDS(on)= 0.015 £i

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

Contextual Info: SGS-THOMSON A M 1 2 1 4 -3 2 5 m RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P o u t = 325 W MIN. WITH 6.4 dB GAIN

Contextual Info: 5 S C S -T H O M S O N iH[ Î. SD4013 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS P RE LIM IN A R Y DATA REFRACTORY/GOLD METALLIZATION INTERNAL INPUT MATCHING METAL/CERAMIC PACKAGE EMITTER BALLASTED 20:1 VSWR CAPABILITY Pout = 25 W MIN. WITH 9 dB GAIN

sgs RF NPN POWER TRANSISTOR 3 GHZ

Abstract: m1416 AM1416-100 M14-16
Contextual Info: r= 7 S G S - T H O M S O N ^ 7#. M ia© g[L i@ T M []igS _ A M 1 4 1 6 -1 0 0 RF & MICROWAVE TRANSISTORS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED i LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY

Contextual Info: SGS-THOMSON TDE0160 H[l g^ i[LI©¥[S(ô !HO(gi PROXIMITY DETECTOR • SUPPLY VOLTAGE : +4TO +36V ■ SUPPLY CURRENT : < 1.2mA ■ OUTPUT TRANSISTORS : I = 20mA; V ce (sat) ¿ 1 100mV ■ OSCILLATOR FREQUENCY : < 1MHz ■ LOSS RESISTANCE : 5 TO 5 0 k il DIP14

D72B

Abstract: 100DC QCB4200 STD10N10L ABS 10 diode
Contextual Info: r= 7 SGS-THOMSON ^ 7 / KiilD Elffl IILiCTIB@li!lD(ES STD10N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD10N10L V dss RoS(on Id 100 V < 0.2 Q 10 A • . . . . . . . TYPICAL R D S (o n ) = 0.16 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON TEA2018A CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT • DIRECT DRIVE OF THE EXTERNAL SWITCHING TRANSISTOR ■ POSITIVE AND NEGATIVE OUTPUT CUR­ RENTS UP TO 0.5 A ■ CURRENT LIMITATION ■ TRANSFORMER DEMAGNETIZATION SENSING ■ FULL OVERLOAD AND SHORT-CIRCUIT

2n4033

Contextual Info: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,

Contextual Info: r z T SG S -THO M SO N EilD glS i[Ll(gT[S©ffl©i SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS i . . . • . ■ 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING P o ut = 125 W MIN. WITH 9.2 dB GAIN PIN CONNECTION

Contextual Info: S G S -1 H 0 M S 0 N iig T G M O ig i 5 7 . S D 1489 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS > . . • . . . . . > 470 - 860 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION

Contextual Info: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: • _ 7^237 Q G 4 b D tlb 233 ■ SGTH r i 7 S G S - T H O M S O N Ä 7# [* ^ o m i(g T O « S _ S TK 16N 10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE S TK16N 10L ■ ■ . ■ . ■ ■ . . V d ss R D S(on

Contextual Info: iZ J S G S -T H O M S O N TEA2260 TEA2261 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE CURRENT UP TO 1.2A and - 2A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE POWER TRANSIS­ TOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­ TATION ■ DOUBLE PULSE SUPPRESSION