SO 237 TRANSISTOR Search Results

Contextual Info: 3GE D • 7^237 0031103 T ■ “T'-'SS'il rrr scs-th o m so n _ 7 # o ^ H tH M M Q S _ 2 N 3 7 2 5 S 6 S-TH0MS0N HIGH VOLTAGE, HIGH CURRENT SWITCH DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high cur­

Contextual Info: Ï. 5 SGS-THOMSON A M 8 2 7 3 1 -0 0 6 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T IMPEDANCE MATCHING OVERLAY G EOM ETRY M ETAL/CERAMIC HERM ETIC PACKAGE

welding equipment smps schematic

Contextual Info: rZ Ä Z S G S -1 H 0 M S 0 N 7 # M D C H O iL ie T IS iS fflD e S S T E 1 1 0 N A 2 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TY P E V dss S T E 1 10NA20 • . . . . . . . . 200 V RDS on < 0 .0 19 Id a 110 A TYPICAL FtDS(on)= 0.015 £i

sgs RF NPN POWER TRANSISTOR 3 GHZ

Abstract: m1416 AM1416-100 M14-16
Contextual Info: r= 7 S G S - T H O M S O N ^ 7#. M ia© g[L i@ T M []igS _ A M 1 4 1 6 -1 0 0 RF & MICROWAVE TRANSISTORS APPLICATIONS . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED i LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY

D72B

Abstract: 100DC QCB4200 STD10N10L ABS 10 diode
Contextual Info: r= 7 SGS-THOMSON ^ 7 / KiilD Elffl IILiCTIB@li!lD(ES STD10N10L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD10N10L V dss RoS(on Id 100 V < 0.2 Q 10 A • . . . . . . . TYPICAL R D S (o n ) = 0.16 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

FZJ 121

Contextual Info: rz j SGS-1H0MS0N Ä T # « » IL Iffir a « ! S TB 3 N A 80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss RDS on Id STB3NA80 800 V < 4.5 Cl 3.1 A . . . . . . . . TYPICAL RDS(on) = 3.5 Ü ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: 3 Q E » • G ü s ^ i i ■ S G S -T H O M S O N >T - 3 R - u _ s 6 s -th o MSon tLH ¥[^@[^0ö©S SGSP222 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S on SGSP222 50 V 0.13 Í2 10 A • HIGH SPEED SWITCHING APPLICATIONS

VN10KM equivalent

Abstract: siliconix VN10KM VN10K equivalent VN10KM siliconix VN10K VN10KE vn10k VN0610L to206
Contextual Info: Siliconix incorporated B O c O « */ ^ VN10KM, V IN I u r v i v i VN0610L S O o-ZbŸ VN10KE MOSPOWER N-Channel Enhancem ent M ode Transistors Zener Diode Protected Gate •TO-92 TO -237 FRO NT V IEW PRODUCT SUM M ARY T 0 -2 0 6 A C BO TTO M VIEW a PART N U M BER

Contextual Info: SCSTHOMSON ÌL i g ¥ M D (g i A M 1 2 1 4 -3 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED ■ 5:1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING ■ OVERLAY GEOMETRY

Contextual Info: • 7^2^237 002^74 7 ■ " T " -3 ° l-\\ SGS-THOMSON 5 1 , BUZ25 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G 3QE S-THOMSON TYPE V DSS ^ D S o n BUZ25 100 V 0.1 Î2 » Id 19 A • 100 VOLTS - FOR DC/DC CONVERTERS • HIGH CURRENT • RATED FOR UNCLAMPED INDUCTIVE

NOTREP

Abstract: L65A GCB4510 STP13N10 vk10v FL-13-A STP13
Contextual Info: rz 7 SCS-THOMSON ^ 7# RÜOSæilLIgTrMDei S T P 13N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP13N10 • . . . . . . . V dss RDS on Id 100 V < 0.2 f l 13 A TYPICAL RDS(on) = 0.16 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 1(XfC

Contextual Info: S G 5 Ï . S - 1 H M S 0 N iLKêTGMtgS SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD - 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

BUF410

Abstract: BUF410FI transistor DA 218
Contextual Info: rz T S G S - T H O M S O N R f ln e ^ o a iû T iO iD e i B U F 4 1 0 /4 1 0 F I HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • SGS-THOMSON PREFERRED SA LESTYPES . HIGH VOLTAGE CAPABILITY . VERY HIGH SWITCHING SPEED ■ MINIMUM LOT-TO-LOT SPREAD FOR

Contextual Info: C 7 SCS-THOMSON ^ 7 / . H » l i m g 1iM W D g i_ A M 0 9 1 2 -1 5 0 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS > . . . . . • . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY

transistor bf 422 NPN

Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

L4938N

Contextual Info: rz T ^•7# S G S -T H O M S O N L 4 9 3 8 N /N D Gjan<sia isiLi5giria©ffignes_ L 4 9 3 8 N P D DUAL MULTIFUNCTION VOLTAGE REGULATOR PRELIM INA R Y DATA ■ STANDBY OUTPUT VOLTAGE PRECISION 5V ±2% ■ OUTPUT 2 TRACKED TO THE STANDBY OUT­ PUT

Contextual Info: SGS-THOMSON :[Li ¥mî@ESgDe m S TD 2 N A 50 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V dss RDS on Id 500 V < 4 a 2.2 A . . . . . . . . TYPICAL RDS(on) = 3.25 £2 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

74f75

Contextual Info: fH HARRIS \ J S E M I C O N D U C T O R \ J M CMOS High Performance Programmable DMA Controller February 1 9 9 2 Features Description • Fully Compatible with Harris 82C37A The 82C237 is a modified version of the 82C37A. The 82C237 is fully software and pin for pin compatible with the

BUV47

Abstract: BUV47FI P421 equivalent buv47a Diode jx4 BUX47 BUX47A bux4 TO218 BUV47AF
Contextual Info: • o o s a g a i SCS -THOMSON S G S-THOMSON □ ■ T 3 3 - I 3 _ BUX47/V47/V47FI BUX47A/V47A/47AFI 3DE D HIGH VOLTAGE POWER SWITCH DESC RIPTIO N The BUX47/A, BUV47/A, BUV47FI/AFI are silicon muitiepitaxiai mesa NPN transistors mounted res­

Contextual Info: Æ T S G S -T tfO M S O N RiôD g (Q [l[L[lgïï[S(o)RgD(gi TEA2262 SWITCH MODE POWER SUPPLY CONTROLLER • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP TO 1A ■ LOW START-UP CURRENT ■ DIRECT DRIVE OF THE MOS POWER TRANSISTOR ■ TWO LEVELS TRANSISTOR CURRENT LIMI­

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

Contextual Info: 7^2^237 G023574 S • _ C ^C T tin U C n il o ü o - 1n U M o U N 1ÌC T 1H M 0 !_ S G S-THOMSON MC33004/A/B MC34004/A/B MC35004/A/B 3DE D J-FET INPUT QUAD OP-AMPs ■ LO W POW ER CONSUMPTION ■ W IDE COM MO N-MO DE AND DIFFERENTIAL VOLTAGE RANGE

sealectro matrix

Abstract: sealectro
Contextual Info: SGS-1H0MS0N 5 1 . MSC80195 IH[ RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS EMITTER BALLASTED CLASS A LINEAR OPERATION COMMON EMITTER VSWR CAPABILITY 20:1 @ RATED CONDITIONS ft 3.2 GHz TYPICAL NOISE FIGURE 12.0 dB @ 2 GHz P o u t = 28 dBm MIN. @ 2.0 GHz

transistor BFT 95

Abstract: transistor BC 171 bft95 pnp transistor 3609 TRANSISTOR MS 173 TRANSISTOR 3611 transistor bc 238 b transistor bf 171 MARKING CODE AM sot-23 telefunken transistor
Contextual Info: TELEFUNKEN ELECTRONIC SIC D ▼ • 812001b 000531!, 8 «ALG S T~3/-'~ m iBraaBSIEI» electronic BPr qB B FT 95 i Creative Technologies Silicon PNP Planar RF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier !