SMOS Search Results

SMOS182

Contextual Info: TMS626802, TMS636802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS182 - FEBRUARY 1994 TM S626802 LVTTL DGE PACKAGE (TO P VIE W ) 3.3-V Power Supply (10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses) vcc [ 1

C2238

Abstract: TMS626812
Contextual Info: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS

TMS626812

Contextual Info: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

Contextual Info: TMS664414, TMS664814, TMS664164 64M-BIT SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS69Q - DECEMBER 1996 High-Speed, L ow -N o ise Low-Voltage x 16 x 4 B a n k s 2M x 8 x 4 B a n k s Transistor-Transistor Logic LVTTL 4M x 4 x 4 B a n k s Interface 3.3-V P o w e r S u p p l y ( ± 1 0 % Toler ance)

44n50

Abstract: 48N50
Contextual Info: SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dimensions SOT-227 ISOTOP Symbol HiPerFET MOSFET VDSS Test Conditions 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30

16PIN

Abstract: MPC17533 OUT2B
Contextual Info: Freescale Semiconductor, Inc. M Product Preview SMARTMOS R MPC17533 Freescale Semiconductor, Inc. 2 Channel H-Bridge Driver IC MPC17533 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU.

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

MC141501P

Abstract: voice recording chip VOICE RECording MC141501 3.58 Mhz Crystal
Contextual Info: M M O T O R O L A MC141501P Product Preview Single Chip Voice Memory System Low power Silicon-Gate CMOS The voice memory system is a SMOS integrated circuit specially designed for voice recording/reproduction application. e.g. Telephone Answering Machine.

Contextual Info: Systems in Silicon Contact Information: S-MOS Systems, Inc. 408-922-0200 or 800-228-9958 150 River Oaks Parkway San Jose, California 95134 Fax: 408 922-0238 E-mail: literature@smos.com URL: www.smos.com AMD Embedded Processor Division, FusionE86 Support

TMS626162A

Contextual Info: TMS626162A 524ā288 BY 16ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS692B − JULY 1997 − REVISED MARCH 1998 D Organization D D D D D D D D D D D D D D D DGE PACKAGE TOP VIEW 512K x 16 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

Contextual Info: M Product Preview SMARTMOS MPC17529 R 2 Channel H-Bridge Driver IC MPC17529 is a monolithic type SMOS5AP SMARTMOS IC built in 2 channel H-Bridge Driver constituted LDMOSFET, input section can be directly interfaced from the MCU. This IC can control 4 mode output function

2U97

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642A- FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • TWo Banks for On-Chip Interleaving

TMS6264

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving

TMS6264

Contextual Info: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving

SMOS44N80

Abstract: PD100A
Contextual Info: SMOS44N80 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09

TMS626812

Contextual Info: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TMS626812

Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

Contextual Info: TMS626162A 524288 BY 16-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS692B - JULY 1997 - REVISED MARCH 1998 Organization 512K x 16 Bits x 2 Banks 3.3-V Power Supply ±10% Tolerance DGEPACKAGE (T O P V IE W ) VCC £ 1 DQOt 2 DQ1 [ 3 VSSQ t 4

S626802-12

Contextual Info: T M S 6 2 6 1 62 5 2 4 2 8 8 - W O R D BY 1 6- B I T B Y 2 - B A N K SYNCHRO NO US DYNAMIC RA N D O M -A C C E S S MEMORY SMOS683D - FEBRUARY 1995 - REVISED JULY 1996 Or ga ni z a t i on . . . 512K x 1 6 x 2 B a n k s DGEPACKAGE TOP V IE W 3.3-V P o w e r S u p p l y (±10% Tol erance)

Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 TMS626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)

V210AB

Abstract: V210B
Contextual Info: V210B/V210AB HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 350VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 3750VACrms

48N50

Abstract: 44n50 SMOS44N50 SMOS48N50
Contextual Info: SMOS44N50, SMOS48N50 Power MOSFETs S S D Dimensions SOT-227 ISOTOP Dim. G G=Gate, D=Drain,S=Source Test Conditions Symbol VDSS 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595

SOT-227 Package

Abstract: SOT-227 TO-247ad SMOS21N50 SMOS26N50 SMOS44N50 SMOS44N50D2 SMOS44N50D3 SMOS44N80 SMOS48N50
Contextual Info: Power MOSFETs Electrical Characteristics Òype VDSS ID25 @TC=25°C RDS ON VGSS Ñircuit Package Style  A SMOS21N50 500 21.0 250 " 20 0.45 1 TO-247AD SMOS26N50 500 26.0 200 " 20 0.50 1 TO-247AD SMOS44N50 500 44.0 120 " 20 0.24 1 SOT-227 SMOS44N50D2 500 44.0

V214S

Contextual Info: V214S HIGH VOLTAGE, PHOTO SMOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 400VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 1500VACrms