TMS626812 Search Results

TMS626812

Contextual Info: TMS626812 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY _ SMOS687A -JULY 1 9 9 6- REVISED APRIL 1997 • • • Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TMS626812

Contextual Info: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY ^ • • • • • • • • • • • • • • Organization. . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)

TMS6264

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGE PACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving

TMS626812

Contextual Info: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TMS626402

Abstract: TMS626812
Contextual Info: TMS626162, TMS626812 16MĆBit Synchronous DRAMs Technical Reference 1996 MOS Memory Products Printed in U.S.A., April 1996 SMOU002 TMS626162, TMS626812 16M-Bit Synchronous DRAMs Technical Reference IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any

TMS626812

Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693 - OCTOBER 1997 TMS626412B DGEPACKAGE TOP VIEW 3.3-V Power Supply (±10% Tolerance) Two Banks for On-Chip Interleaving (Gapless Accesses)

TMS626812

Contextual Info: TMS626812B 1 048 576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693A- OCTOBER 1997 - REVISED APRIL 199B Organization 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)

S693

Abstract: TMS626812
Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES S M O S 693-O C TO BE R 1997 TM S626412B D G EP A C K A G E TOP VIEW vcc [ 1 NC [ 2 SYNCHRONOUS CLOCK CYCLE TIME 44 ] V SS 43 ] NC

LV19

Abstract: TMS626812
Contextual Info: TMS626412A, TMS626812A 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES S M O S691A - JULY 1997 - REVISED OCTOBER 1997 TMS626412A DGEPACKAGE TO P VIEW *CK3 (C L t = 3) tCK2 (C L=2) V cc [ 1 44 ] V s s ve c [

TMS626812A

Abstract: TMS626812
Contextual Info: TMS626812A 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORY SMOS691B − JULY 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D TMS626812A DGE PACKAGE TOP VIEW 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply (± 10% Tolerance)

TMS626812B

Abstract: TMS626812
Contextual Info: TMS626812B 1 048 576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS693A – OCTOBER 1997 – REVISED APRIL 1998 D D D D D D D D D D D D D D D D D D Organization 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TMS626812

Contextual Info: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

SM038

Abstract: TMS626812
Contextual Info: TMS626412B, TMS626812B 2097152 BY 4-BIT BY 2-BANK, 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS893 - OCTOBER 1997 tCK3 C Lt s 3 *CK2 (CL = 2) <AC2 (CL=2) •626x12B-12 12 ns 15 ns 8 ns 9 ns 64 ms '626x128-10 10 ns 15 ns 6 ns

YCL nad 16 c

Abstract: TMS626812
Contextual Info: TMS626812 1 048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY S M O S 687-JU LY 1996 Or ga n i za t i o n . . . 1 M x 8 x 2 B a n k s DGEPACKAGE TO P VIEW 3.3- V P o w e r S u p p l y ( ± 1 0 % T ol er ance) Two B a n k s for O n - C h i p I nt er l eavi ng

TMS626812B

Abstract: TMS626812
Contextual Info: TMS626812B 1 048 576 BY 8ĆBIT BY 2ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS693A − OCTOBER 1997 − REVISED APRIL 1998 D Organization D D D D D D D D D D D D D D D D D TMS626812B DGE PACKAGE TOP VIEW 1048576 by 8 Bits by 2 Banks 3.3-V Power Supply (± 10% Tolerance)

TMS626812

Abstract: 83MHZ
Contextual Info: TMS626812 1048576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS687A –JULY 1996 – REVISED APRIL 1997 D D D D D D D D D D D D D D D D D Organization . . . 1M x 8 × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TMS626812A

Abstract: TMS626812
Contextual Info: TMS626812A 1 048 576 BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS691B – JULY 1997 – REVISED APRIL 1998 D D D D D D D D D D D D D D D D D Organization 1M Words x 8 Bits × 2 Banks 3.3-V Power Supply ± 10% Tolerance Two Banks for On-Chip Interleaving

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

C2238

Abstract: TMS626812
Contextual Info: TM S626412A , TM S626812A 2 0 9 7 1 5 2 B Y 4 -B IT B Y 2 -B A N K , 1 0 4 8 5 7 6 B Y 8 -B IT B Y 2 -B A N K S Y N C H R O N O U S D Y N A M IC R A N D O M -A C C E S S M E M O R IE S _ SMOS691A-JULY 1997 - REVISED OCTOBER 1997 SYNCHRONOUS

TMS626812

Contextual Info: TM2SJ64EPN 2097152 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES - SODIMM _ SMMS697A - AUGUST 1997 - REVISED NOVEMBER 1997 • • • • SYNCHRONOUS CLOCK CYCLE TIME *CK3 . CL = 3 + lCK2 (CL = 2) ACCESS TIME CLOCK TO OUTPUT *CK3

TMS626812

Contextual Info: TM2SR72EPN 2097152 BY 72-BIT TM4SR72EPN 4194304 BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULES S M M S 698A -JU N E 1997-R E V IS E D FEBRUARY 1998 Organization - TM2SR72EPN . . . 2097152 x 72 Bits - TM4SR72EPN . . .4194304 x 72 Bits High-Speed, Low-Noise Low-Voltage TTL

TMS626812

Contextual Info: TM2SJ64EPN 2097152 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES - SODIMM S M M S 697B -A U G U S T 1997-R E V IS E D FEBRUARY 1998 Organization: 2 097 152 x 64 Bits Support Burst-lnterleave and Burst-lnterrupt Operations Single 3.3-V Power Supply ±10% Tolerance

TMS626812ADGE

Abstract: TM2CN64EFN TM4CN64EFN TMS626812A TMS626812
Contextual Info: TM2CN64EFN 2ā097ā152 BY 64ĆBIT TM4CN64EFN 4ā194ā304 BY 64ĆBIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS714 − MAY 1998 D D D D D D D D High-Speed, Low-Noise, Low-Voltage TTL − TM2CN64EFN . . . 2 097 152 x 64 Bits − TM4CN64EFN . . . 4 194 304 x 64 Bits