SMD TRANSISTOR LY Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

smd transistor LY

Abstract: smd transistor ISS smd transistor ISS 7
Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Contextual Info: Product specification Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD-technology.

smd transistor LY

Abstract: A763 transistor SMD 352 ld smd transistor smd transistor ds
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-fllm circuits for

smd transistor LY

Abstract: smd transistor ds 65 ld smd transistor smd transistor ds 15 transistor LD TRANSISTOR C 369 BST86
Contextual Info: Product specification Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed for use as Surface Mounted Device SMD in thin and thick-lilm circuits for

transistor smd LC 77

Abstract: D103D smd transistor 2x5 smd transistor ne c2 BLT81 TRANSISTOR SMD catalog smd ic 611 SMD ic catalogue UHF POWER TRANSISTOR SMD Transistor 1c
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. C DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a

TRANSISTOR SMD MARKING CODE JSs

Abstract: smd JSs transistor TRANSISTOR SMD MARKING CODE DM TRANSISTOR SMD MARKING CODE pKX smd code pKX smd JSs SMD CODE TRANSISTOR JA smd transistor FY smd transistor marking PA 6 pin TRANSISTOR SMD CODE PA
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor
Contextual Info: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.

BST122

Contextual Info: • b b s s 'm 0023^0 uw N AMER PHILIPS/DISCRETE APX b7E D BST122 JV P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended fo r use in relay, high-speed and line-transformer drivers, using SMD-technology.

TRANSISTOR SMD MARKING CODE pKX

Abstract: smd code pKX transistor smd marking ds SMD SOT23 transistor PMBF170 marking pKX sot23 smd transistor marking N TRANSISTOR SMD MARKING CODE smd transistor MARKING ms sot23 PMBF170 pkx
Contextual Info: PMBF170 FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device SMD in thin and thick-film circuits with applications in relay, high-speed

Contextual Info: • bbS3^31 0023=155 33^ HIAPX N AUER PHILIPS/DISCRETE BST80 b?E D y v N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT89 envelope and designed fo r use as Surface Mounted Device SMD in thin and thick-film circuits fo r application with relay, high-speed

02p SMD TRANSISTOR

Contextual Info: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application

MARKING SMD transistor 12X

Abstract: smd transistor marking HA TRANSISTOR SMD MARKING 2 HA transistor marking 12x transistor smd marking BA 26 smd 37e BST120 smd transistor 591 D-MOS transistor p-channel smd transistor marking 2U
Contextual Info: • ^53^31 aG23T77 5TT « A P X N AMER P H I L I P S / D I S C R E T E BST120 b7E T> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4075 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 1 0.55 ● Collector Current: IC=150mA +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Power Dissipation: PC=100mW 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

smd transistor LY

Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)

SMD TRANSISTOR MARKING km

Abstract: BST80 SMD BST80 marking JC MOS transistor a 701 smd
Contextual Info: b b S B ^ l 0023=155 ^31 • APX ■ N AUER PHILIPS/DISCRETE BST80 b?E T> _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tra n sìsto r in S O T 89 envelope and designed fo r use as Surface M ou n te d Device SMD in th in and th ic k -film c irc u its f o r a p p lica tio n w ith relay, high-speed

Contextual Info: ACTS541T D a ta s h e e t Ju ly 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

Contextual Info: HCTS109T D ata S h eet Ju ly 1999 F ile N u m b er Radiation Hardened Dual JK Flip Flop Features Harris’ Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

dinverter 768r

Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.