SMD TRANSISTOR LD Search Results

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

Contextual Info: SO T2 3 PMV45EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

PMV20EN

Contextual Info: SO T2 3 PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: SO T2 3 PMV37EN2 30 V, N-channel Trench MOSFET 3 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench

3P03L04

Abstract: ANPS071E INFINEON smd PART MARKING IPI80P03P3L-04 INFINEON PART MARKING DIODE smd marking Ag IPB80P03P3L-04 IPP80P03P3L-04 package to220 DIODE smd marking code UM 31
Contextual Info: Target data sheet IPI80P03P3L-04 IPP80P03P3L-04,IPB80P03P3L-04 OptiMOS -P Power-Transistor Product Summary Feature -30 VDS • P-Channel RDS on max. SMD version • Enhancement mode • Automotive AEC Q101 qualified 4 ID • Logic Level P- TO262 -3-1 V

L 10mH

Abstract: ld smd transistor smd transistor 26 KUK109-50DL atp50
Contextual Info: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK109-50DL TO-263 Features Unit: mm 1 .2 7 -0+ 0.1.1 Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature +0.1 1.27-0.1 +0.2 4.57-0.2 5 V logic compatible input level

SMD transistor Mu

Abstract: 10MU ld smd transistor KUK108-50DL
Contextual Info: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK108-50DL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.2 4.57-0.2 +0.1 1.27-0.1 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 5 V logic compatible input level

KUK110-50GL

Contextual Info: Transistors IC SMD Type PowerMOS transistor Logic level TOPFET KUK110-50GL TO-263 Unit: mm 1 .2 7 -0+ 0.1.1 Features Vertical power DMOS output stage Low on-state resistance +0.1 1.27-0.1 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 5 V input level Low threshold voltage also allows 5 V control

Contextual Info: Transistors IC SMD Type TrenchMOSTM transistor Standard level FET KUK7605-30A 1 .2 7 -0+ 0.1.1 TO-263 +0.2 4.57-0.2 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 2 .5 4 -0+ 0.2.2 0.1max +0.1 1.27-0.1 1 5 .2 5 -0+ 0.2.2 5 .6 0 +0.1 1.27-0.1

capacitor 2200 uF

Abstract: transistor 2N2222 SMD R10 smd 2n2222 smd transistor 2N2222 78L08 ACPR1980 ACPR400 ACPR600 ACPR750
Contextual Info: BLF4G10-160 UHF power LDMOS transistor Rev. 01 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB test circuit.

transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
Contextual Info: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

BLF6G22LS-100

Abstract: RF35 TRANSISTOR SMD BV
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

C5750X7R1H106M

Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table
Contextual Info: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

HC49 MEGATEC

Abstract: c103 TRANSISTOR transistor c317 c102 TRANSISTOR TRANSISTOR C307 C312 diode smd capacitor philips 0805 capacitor 100nf 50v 0805 datasheet c103 TRANSISTOR equivalent 0805B104K500CT
Contextual Info: DEMO9RS08KA2 Schematic and Bill of Material DC01098 SW102 RESET SW101 SW0 VDD GND GND GND 470R R108 470R R106 470R Q103 BSS138 Q102 BSS138 Q101 BSS138 www.softecmicro.com HB YELLOW LED2 LD103 RED LED1 LD102 C104 100nF R104 GND GND C103 100nF R103 10K VDD RED

transistor K 1352

Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor
Contextual Info: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

transistor 9575

Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

BLF6G10LS-160RN

Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13
Contextual Info: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

smd transistor 3400

Abstract: smd transistor equivalent table J412 - TRANSISTOR SMD BLF6G38S-25 C5750X7R1H106M cdma QPSK modulation Walsh pilot BLF6G38-25 C4532X7R1H475M RF35 722 smd transistor
Contextual Info: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 02 — 23 December 2008 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

transistor SMD g 28

Contextual Info: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

transistor D 1002

Abstract: BLF6G22LS-100 RF35
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

BLF6G22LS-100

Abstract: RF35
Contextual Info: BLF6G22LS-100 Power LDMOS transistor Rev. 3 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

D2375

Abstract: BLF6G10S-45 RF35
Contextual Info: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

RF35

Abstract: BLF6G10S-45 TRANSISTOR SMD CODE 6.8 smd transistor f3 65
Contextual Info: BLF6G10S-45 Power LDMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.