SMD TRANSISTOR E3 Search Results

CDFP4-F16

Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor
Contextual Info: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The

PDTC143ZU

Abstract: PDTC143ZE PDTA143
Contextual Info: PDTC143Z series NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k Rev. 8 — 5 December 2011 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET family in Surface-Mounted Device (SMD) plastic packages.

SFH6156

Abstract: SFH615A SFH615A-1 SFH615A-2 SFH615A-3 SFH615A-4 VDE0884 vishay sfh6156 optocoupler SFH6156-2 vishay
Contextual Info: SFH615A / SFH6156 Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Excellent CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS e3 • Fast Switching Times • Low CTR Degradation • Low Coupling Capacitance

Samsung 0603 capacitor 50v 10 x7r

Abstract: CAPACITOR SMD SAMSUNG Vishay capacitor samsung smd capacitor 0.1uF 10 50V x7r 0603 Yageo smd resistor 10k smd 2a 3 PIN fet Samsung rohs 0603 capacitor capacitor 10uF 50V samsung L20 SMD SMD TRANSISTOR MARKING P2
Contextual Info: ISL8560EVAL2Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note February 13, 2008 AN1324.3 The ISL8560 is a step down DC/DC power switching regulator which accepts a 9V to 60V input, and provides up to 2A of output current. The output voltage can be set

preset resistor 10k

Abstract: YAGEO resistor SMD TRANSISTOR MARKING P2 0603 AVX rohs x7r 0805 capacitors samsung 9v smd transistor H1065-00104-100V10-T H1045-00101-50V5-T Yageo smd resistor 10k smd transistor E3
Contextual Info: ISL8540EVAL1Z: 2A High Voltage Buck Regulator with Integrated MOSFETs Application Note The ISL8540 is a step down DC/DC power switching regulator which accepts a 9V to 40V input, and provides up to 2A of output current. The output voltage can be set between 1.21V and 35V by means of an external resistor

Contextual Info: S593TX/S593TXR/S593TXRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • Integrated gate protection diodes • Low noise figure e3 • High gain, very high forward transadmittance 40 mS typ.

SMD Transistor Y14

Abstract: K18 capacitor SMD y14 5962F9751201VXC HS-22620RH HS9-22620RH-Q uncompensated operational amplifier HS2262 K18B smd transistor 813
Contextual Info: HS-22620RH S E M I C O N D U C T O R July 1997 Rad Hard Dual, Wideband, High Input Impedance Uncompensated Operational Amplifier Features Description • Electrically Screened to DSCC SMD # 5962-97512 The HS-22620RH is a radiation hardened, dual bipolar operational amplifier that features very high input impedance

Contextual Info: PD84006-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet −production data Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances: POUT = 6 W with 13 dB gain @ 870 MHz

Contextual Info: LET20030S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 11 dB gain @ 2000 MHz • ESD PROTECTION

PD85015s-e

Abstract: PD85015 AN1294 PD85015-E
Contextual Info: PD85015-E PD85015S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

650P

Abstract: BTS650P E3180 Q67060-S6308-A2 BTS650P E3180A
Contextual Info: Data Sheet BTS650P ReversaveÔ Ô Smart Highside High Current Power Switch Features Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Overload protection

16V16

Contextual Info: SIEMENS PROFET Target Data Sheet BTS660P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Overload protection Current limitation Short circuit protection Overtemperature protection

smd transistor marking j6

Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
Contextual Info: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation

IC SAF 0300 DATA

Abstract: IC SAF 0300 SMD Transistor Y14 transistor d143
Contextual Info: Radiation Hardened CMOS Dual DPST Analog Switch HS-302RH, HS-302EH Features Intersil’s Satellite Applications Flow SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended to

NV SMD TRANSISTOR

Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Contextual Info: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

5962F9861303VXC

Abstract: transistor d143
Contextual Info: Radiation Hardened Quad Voltage Comparator HS-139RH, HS-139EH Features The Radiation Hardened HS-139RH, HS-139EH consists of four independent single or dual supply voltage comparators on a single monolithic substrate. The common mode input voltage range includes ground, even when operated from a single

HS-201HSRH

Abstract: 5962F9961801VXC HS9-201HSRH/PROTO 5962F9961801VEC 5962F9961801QEC CDFP4-F16 HS1-201HSRH FN4874
Contextual Info: HS-201HSRH Data Sheet March 24, 2006 Radiation Hardened High Speed, Quad SPST, CMOS Analog Switch The HS-201HSRH is a monolithic CMOS analog switch featuring power-off high input impedance, very fast switching speeds and low ON resistance. Fabrication on our DI RSG

6 pin TRANSISTOR SMD CODE Z1

Abstract: 410E2 410H BTS410G2 E3062 smd diode code L12
Contextual Info: PROFET BTS 410 G2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short circuit protection • Thermal shutdown

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

BTS 442 E2 E3043

Abstract: BTS442E2 E3043 E3062 E3062A Q67060-S6206-A2 Q67060-S6206-A3 Q67060-S6206-A4 442e2 Diode smd code ag
Contextual Info: PROFET BTS 442 E2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown

PROFET

Abstract: BTS442D2 E3043 E3062 E3062A Q67060-S6205-A2 Q67060-S6205-A3 Q67060-S6205-A4 ST SMD SCR
Contextual Info: PROFET BTS 442 D2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown