SMD TRANSISTOR BF Search Results

transistor SMD MARKING CODE HF

Abstract: smd code HF transistor
Contextual Info: • bbS3T31 0DE470fl 14fl ■ APX N AUER PHILIPS/DISCRETE BF824 b7E D 7 V H.F. SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic SOT-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for SMD applications.

TRANSISTOR SMD MARKING CODE a9

Abstract: TRANSISTOR SMD MARKING CODE K TRANSISTOR SMD MARKING CODE MARKING CODE SMD IC transistor smd marking LE MARKING CODE V6 SMD TRANSISTOR MARKING code TJ smd transistor m90 MARKING SMD IC CODE V6 marking code
Contextual Info: Philips Components BFG33 BFG33X NPN 12 GHz WIDEBAND TRANSISTOR BFG33 is an npn transistor in a m icrom iniature SOT143 envelope w ith double em itter bonding. The device contains a BFQ33 crystal and is fo r use in circuits using SMD technology. Features • Extremely high transition frequency

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

BFS17

Abstract: bfs17 Vishay BFS17R BFS17W 702 TRANSISTOR sot-23 85038
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

transistor MAR 819

Abstract: transistor MAR 543 sl2 357 BFS17
Contextual Info: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4

"marking E1"

Abstract: BFS17 BFS17R BFS17W
Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

BF822W

Contextual Info: Transistors SMD Type NPN High-Voltage Transistor BF822W Features Low current max. 50 mA High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V

Contextual Info: BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2

BF820W

Abstract: ja TRANSISTOR smd smd transistor ja
Contextual Info: Transistors SMD Type NPN High-Voltage Transistor BF820W Features Low current max. 50 mA High voltage (max. 300 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 300 V

MARKING SMD PNP TRANSISTOR F8

Abstract: transistor f8 MARKING SMD PNP TRANSISTOR BF824W marking f8
Contextual Info: Transistors IC SMD Type PNP Medium Frequency Transistor BF824W Features Low current max. 25 mA . Low voltage (max. 30 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd BF Marking transistor smd bf MARKING 15A MARKING BF 2SB1308 SMD TRANSISTOR BF
Contextual Info: Transistors SMD Type Power Transistor 2SB1308 Features Low saturation voltage, typically VCE sat = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage

BFS17

Abstract: transistor BFs 18 BFS17R marking E1
Contextual Info: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

SMD 6PIN IC MARKING CODE

Abstract: marking code CB SMD ic TRANSISTOR SMD MARKING CODE ce ce BFS469L6 MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE ad BFR460L3 BFR949L3 BFS360L6 marking code CB SMD tr2
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3

Contextual Info: tUN 11 » « DISCRETE SEMICONDUCTORS Philips Semiconductors PHILIPS t.b53T31 0035171 507 P h lllp i Sem iconductor! Product specification UHF power transistor FEATURES • SMD encapsulation • Gold m etallization ensures excellent reliability. BLT80 QUICK REFERENCE DATA

zs transistor

Abstract: BFR460L3 BFS460L6 smd transistor marking zs smd transistor 6b1 smd transistor zl
Contextual Info: BFS460L6 NPN Silicon RF TWIN Transistor 4 • High fT of 22 GHz 3 5 • For low voltage / low current applications 2 6 • Ideal for VCO modules and low noise amplifiers 1 • Low noise figure: 1.1 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package

marking F2

Abstract: smd marking f2 BFS19 F2 smd ic sot23-5
Contextual Info: Transistors SMD Type NPN Medium Frequency Transistor BFS19 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low Voltage max. 20 V +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 30 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1

0401 transistor

Abstract: BF840 npn 222 SMD IC MARKING NC NC marking transistor marking NC ja TRANSISTOR smd transistor smd marking NA sot-23
Contextual Info: Transistors IC SMD Type NPN Medium Frequency Transistor BF840 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low current max. 25 mA . 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

ML 1557 b transistor

Contextual Info: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1

BF550

Abstract: MARKING LA MARKING SMD PNP TRANSISTOR
Contextual Info: Transistors IC SMD Type PNP Medium Frequency Transistor BF550 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low current max. 25 mA . 0.4 3 1 0.55 Low voltage (max. 40 V). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

SMD TRANSISTOR MARKING BF

Abstract: bf TRANSISTOR smd hFE-150 SMD TRANSISTOR BF marking be smd transistor marking 017 2SC3443 transistor smd bf BF Marking 017V
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC3443 Features High hFE=150 to 800. High collector current Ic=2A . High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.17V typ(@Ic=1A,IB=50mA). Small package for mounting. Absolute Maximum Ratings Ta = 25

Contextual Info: • Features CHIP PHOTO-TRANSISTOR 1. Developed as a chip type SMD photo-tran­ CmSENSOR sistor for both reverse and top surface m ounting 2 . 5 ^ J îi^ æ iS e .2 L x l,4 5 ( W ) x 1 .1 2. Small and square size, dim ensions : 2 .2 (L)x 1 . 4 5 ( W ) X 1 . 1 (H)mm

transistor smd zG

Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Contextual Info: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband

ku-band lnb

Abstract: SOT363F Multiple output LNB lnb ku BFU725F LNA ku-band QUBiC4X smd transistor sot363 ku-band lnb satellite BGA28xx
Contextual Info: NXP satellite LNB devices BFU725F and BGA28xx Complete satellite portfolio for all LNB architectures Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology and