SMD TRANSISTOR 3D Search Results

smd transistor 2a

Abstract: 5a SMD Transistor
Contextual Info: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1

smd transistor 2Q

Abstract: FMMT5209 30Hz
Contextual Info: Transistors IC SMD Type Small Signal Transistor FMMT5209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

FMMT5210

Abstract: transistor smd marking NA
Contextual Info: Transistors IC SMD Type Small Signal Transistor FMMT5210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

3N0607

Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1

PN0807

Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated

ANPS071E

Abstract: PN0605 SPB100N06S2-05 SPP100N06S2-05 infineon smd package
Contextual Info: SPP100N06S2-05 SPB100N06S2-05 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 55 V 4.7 mΩ 100 A P- TO220 -3-1 • dv/dt rated

Contextual Info: Transistors IC SMD Type Product specification FMMT5210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Small signal transistor. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2n03l04

Abstract: Q67042-S4113 2n03 s4112 SPB80N03S2L-04 SPI80N03S2L-04 SPP80N03S2L-04 2N03L 2N03L04,SPP80N03S2L-04
Contextual Info: Preliminary data SPI80N03S2L-04 SPP80N03S2L-04,SPB80N03S2L-04 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P-TO262-3-1 VDS 30 RDS(on) max. SMD version 3.9 m
ID 80 A P-TO263-3-2

2N04L03

Abstract: ANPS071E SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 OptiMOS
Power-Transistor Product Summary Feature 40 VDS
N-Channel RDS on
Enhancement mode max. SMD version ID
Logic Level P- TO263 -3-2
175°C operating temperature V 3.1 m
80 A P- TO220 -3-1
Avalanche rated
dv/dt rated

FMMT2484

Abstract: MARKING SMD 4G
Contextual Info: Transistors IC SMD Type Small Signal Transistor FMMT2484 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 60 Volt VCEO. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

smd transistor 3d

Abstract: 3F smd transistor 3D smd marking smd transistor marking 3d smd transistor 3g smd transistor 3F smd transistor BC857 BC857 smd transistor smd 3E SMD TRANSISTOR MARKING 3B
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC856,BC857,BC858 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 65 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

KH206

Abstract: CLC206 KH206AI KH206AK KH206AM KH206HXA KH206HXC Fairchild 38510 12 Pin Metal can fairchild
Contextual Info: www.fairchildsemi.com KH206 Overdrive-Protected Wideband Op Amp Features • ■ ■ ■ ■ ■ ■ ■ General Description -3dB bandwidth of 180MHz 70MHz large signal bandwidth 20Vpp 0.1% settling in 19ns Overdrive protected Output may be current limited

CLC220

Abstract: KH220 KH220AI KH220AK KH220AM KH220HXA KH220HXC
Contextual Info: www.fairchildsemi.com KH220 Fast Settling Wideband Op Amp Features • ■ ■ ■ ■ ■ General Description -3dB bandwidth of 190MHz 0.1% settling in 8ns 7000V/µs slew rate 1.9ns rise and fall times Low distortion, linear phase Direct replacement for CLC220

op 50Mhz dip

Abstract: replacement for kh200ai CLC200 KH200 KH200AI KH200AK KH200AM KH200HXC 5962-8991001XA 5962-8991001XC
Contextual Info: www.fairchildsemi.com KH200 Fast Settling, Wideband Operational Amplifier Features • ■ ■ ■ ■ ■ -3dB bandwidth of 95MHz 0.1% settling in 18ns 4000V/µs slew rate Low distortion, linear phase 3.6ns rise and fall times Direct replacement for CLC200

5962-8991001XC

Abstract: Direct Replacement Fairchild OP-amp baseband replacement for kh200ai CLC200 KH200 KH200AI KH200AK KH200AM KH200HXC
Contextual Info: www.fairchildsemi.com KH200 Fast Settling, Wideband Operational Amplifier Features • ■ ■ ■ ■ ■ -3dB bandwidth of 95MHz 0.1% settling in 18ns 4000V/µs slew rate Low distortion, linear phase 3.6ns rise and fall times Direct replacement for CLC200

4894B

Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
Contextual Info: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring

smd transistor AJp 65

Abstract: CLC110 CLC110AJE CLC110AJP SMD Transistor AJE smd AJp 65
Contextual Info: N CLC110 Wideband, Closed-Loop Monolithic Buffer Amplifier General Description Features • ■ ■ ■ ■ Closed-loop, unity-gain operation -3dB bandwidths of 730MHz 0.5Vpp 0.2% settling in 5ns Low power, 150mW Low distortion, -65dBc at 20MHz Applications

Comlinear

Abstract: clc200 CLC200AM CLC200A8C CLC200AI CLC200AK
Contextual Info: N Not Intended For New Designs Comlinear CLC200 Fast Settling, Wideband Operational Amplifiers General Description Features • ■ ■ ■ ■ -3dB bandwidth of 95MHz 0.1% settling in 18ns 4000V/µs slew rate Low distortion, linear phase 3.6ns rise and fall times

220uf 16v capacitor

Abstract: schematic diagram electric drill 1N4007 RECTIFIER DIODE IEC61036 SA4104 SCHEMATIC DIAGRAM UNIVERSAL 220V MOTOR led 3mm red 3.3V ZENER DIODE 250v energy meter circuit diagram SA4104A
Contextual Info: RM4104ASEB Application Note: Low-Cost Watt-Hour Energy Meter RM4104ASEB FEATURES + Designed to meet IEC61036 requirements for class 1 active energy meters + + + Selectable rated conditions, LED pulse rates and counter Direct drive capability for stepper motor or impulse

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers

CLC401

Abstract: CLC401A8B CLC401AJE CLC401AJP SmD TRANSISTOR av AV smd transistor 150401
Contextual Info: N CLC401 Fast Settling, Wideband High-Gain Monolithic Op Amp General Description Features • ■ ■ ■ ■ ■ -3dB bandwidth of 150MHz 0.1% settling in 10ns Low power, 150mW Overload and short circuit protected Stable without compensation Recommended gain range, ±7 to ±50

Nordmende

Abstract: Funkamateur Kathrein Antennas ECC85 TBA810 AMPLIFIER TBA810 Kathrein LFPAK package 5 ferrite rod antenna SiC PIN diode Pspice model
Contextual Info: Appendix RF Manual 7th edition November 2005 date of release: November 2005 document order number: 9397 750 15371 Contents 1. Thermal design considerations for SMD discretes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4