SMD TRANSISTOR 1D Search Results

4894B

Abstract: 3DC1515S smd TRANSISTOR 1D 3DC1515S-0477X CSTCE8M00G55A smd transistor zc ATAB5282 3dc1515 ATmega8515 rs232 SMD Capacitor symbols
Contextual Info: LF Wake-up Demonstrator ATAK5278-82 1. General Description The LF wake-up demonstrator is provided to demonstrate the performance of an LF wake-up channel, mainly needed for battery-driven systems. Typical wake-up applications can be found in vehicles for passive entry PE and tire pressure monitoring

Contextual Info: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold

transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

SMD Transistor Y12

Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
Contextual Info: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.

RF35

Contextual Info: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Contextual Info: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

BLL6H1214-500

Abstract: 800B
Contextual Info: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 01 — 20 January 2009 Objective data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information

BLS6G2731-120

Contextual Info: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.

30RF35

Abstract: BLF6G38-50 BLF6G38LS-50 C5750X7R1H106M RF35 VJ1206Y104KXB
Contextual Info: BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 02 — 1 June 2010 Product data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance

600S2R7BT250XT

Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85
Contextual Info: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency

SLD-1083CZ

Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Contextual Info: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage

smd transistor M28 sot23

Abstract: ISL6225A CAP ELL 10UF SMD panasonic MSL level smd diode 5d isl6227caz smd diode 1d SMD Transistor 5f 4d SMD Transistor panasonic Radial lead MSL level
Contextual Info: ISL6227EVAL1 DDR Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board DDR implementation. For information about the dual switcher application, please refer to the ISL6227EVAL2 Evaluation Board Setup Procedure.

transistor 603

Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
Contextual Info: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at

16V16

Contextual Info: SIEMENS PROFET Target Data Sheet BTS660P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Summary Overvoltage protection Overload protection Current limitation Short circuit protection Overtemperature protection

PTF141501E

Abstract: PTF141501A LM7805 smd philips smd 1206 resistor transistor smd marking ND LM7805 smd lm7805 LM7805 M SMD SCHEMATIC DIAGRAM 3.3kv BCP56
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz, 1600 – 1700 MHz Description The PTF141501E and PTF141501E are 150-watt, GOLDMOS FETs intended for DAB applications. These devices are characterized for Digital

BLS2933-100

Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
Contextual Info: BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor at a supply voltage of 32 V for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

CLC502

Abstract: CLC502AJE CLC502AJP
Contextual Info: N CLC502 Clamping, Low-Gain Op Amp with Fast 14-bit Settling General Description Features • ■ ■ ■ Output clamping with fast recovery 0.0025% settling in 25ns 32ns max. Low power, 170mW Low distortion. -50dBc at 20MHz Applications ■ ■ ■ ■

BLF4G22-130

Abstract: BLF4G22LS-130 RF35
Contextual Info: BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Rev. 01 — 3 July 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance

BLS6G3135S-120

Abstract: BLS6G3135-120
Contextual Info: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

op 50Mhz dip

Abstract: CLC409AJE CLC409 CLC409AJM5 CLC409AJP CLC409ALC CLC409AMC
Contextual Info: N CLC409 Very Wideband, Low Distortion Monolithic Op Amp General Description Features • ■ ■ ■ ■ ■ ■ 350MHz small signal bandwidth -65/-72dBc 2nd/3rd harmonics 20MHz Low noise 8ns settling to 0.1% 1200V/µs slew rate 13.5mA supply current (±5V)

smd transistor pinout sot23

Abstract: CLC404 CLC404AJE CLC404AJM5 CLC404AJP CLC404ALC CLC730013 SMD Transistor AJE SOT23 AJP sot23
Contextual Info: N CLC404 Wideband, High-Slew Rate, Monolithic Op Amp General Description Features • ■ ■ ■ ■ ■ 165MHz large signal bandwidth 5Vpp 2600V/µs slew rate Low power: 110mW Low distortion: -53dBc at 20MHz 10ns settling to 0.2% 0.07% diff. gain, 0.03% diff. phase

panasonic rx c39

Abstract: fj series capacitor panasonic ECU-E1E102KBQ murata sfeca 10.7 CE CAPACITOR PANASONIC ERJ2GE0R00 SMD resistors 0402 SFECA smd transistor SOT-23 fj hc49/smd transistor lf
Contextual Info: RF RF2905 Preliminary M ICRO-DEVICES 4 3 3 /8 6 8 /9 1 5 M H Z FM /FSK /A S K /O O K TR A N S C E IV E R T y p ic a l A p p lic a t io n s • Wireless Meter Reading • Wireless Data Transceiver • Keyless Entry Systems • Wireless Security Systems • 433/868/915MHz ISM Band Systems

Comlinear Corporation clc502

Abstract: smd transistor 2T 2AJE
Contextual Info: N CLC502 Clamping, Low-Gain Op Amp with Fast 14-bit Settling General Description Features • ■ ■ ■ Output clamping with fast recovery 0.0025% settling in 25ns 32ns max. Low power, 170mW Low distortion. -50dBc at 20MHz Applications ■ ■ ■ ■

smd s101

Abstract: s101 6-pin RM1M VC200
Contextual Info: SIEMENS H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVcer VOLTAGE OPTOCOUPLER FEATURES * * * • * * * * * * * * CTR at lp=10 mA, BVceR=10 V: >20% Good CTR Linearity with Forward Current Low CTR Degradation Very High Coliector-Emitter Breakdown