SMD SAA Search Results

IRHNA57260SE

Abstract: 9936 b
Contextual Info: PD - 91839E RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

IRHNJ57230SE

Abstract: smd diode 78a
Contextual Info: PD - 93836 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230SE 100K Rads (Si) RDS(on) 0.22Ω ID 12A SMD-0.5 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

IRHNJ57234SE

Abstract: smd diode 64A
Contextual Info: PD - 93837 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57234SE 250V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57234SE 100K Rads (Si) RDS(on) 0.40Ω ID 10A SMD-0.5 International Rectifier’s R5TM technology provides

Contextual Info: PD - 91839D RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57260SE 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNA57260SE 100K Rads (Si) RDS(on) 0.038Ω ID 55A SMD-2 International Rectifier’s R5TM technology provides

IRHNA57163SE

Abstract: 93856
Contextual Info: PD - 93856 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57163SE 130V, N-CHANNEL R5 TECHNOLOGY ™ ™ Product Summary Part Number Radiation Level RDS(on) ID IRHNA57163SE 100K Rads (Si) 0.0135Ω 75A* SMD-2 International Rectifier’s R5TM technology provides

IRHNA57264SE

Contextual Info: PD - 93816A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57264SE 250V, N-CHANNEL R5 TECHNOLOGY ™ ™ Product Summary Part Number Radiation Level IRHNA57264SE 100K Rads (Si) RDS(on) 0.06Ω ID 49A SMD-2 International Rectifier’s R5TM technology provides

Contextual Info: PD - 93816 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57264SE 250V, N-CHANNEL R5 TECHNOLOGY ™ ™ Product Summary Part Number Radiation Level IRHNA57264SE 100K Rads (Si) RDS(on) 0.06Ω ID 49A SMD-2 International Rectifier’s R5TM technology provides

working of 5 pen pc technology

Abstract: rifa pme 285 for all smd components plastic raw material xenon lamp igniter 5 PEN PC TECHNOLOGY free 5 PEN PC TECHNOLOGY existing xenon hid ballast Electronic ignitors for HID lamp circuits abstract 5 pen pc technology
Contextual Info: Advances in Class-I C0G MLCC and SMD Film Capacitors Xilin Xu, Matti Niskala*, Abhijit Gurav, Mark Laps, Kimmo Saarinen*, Aziz Tajuddin, Davide Montanari*, Francesco Bergamaschi*, and Evangelista Boni* KEMET Electronics Corporation, 2835 KEMET Way, Simpsonville, SC 29681

Contextual Info: _ PZT2907 PZT2907A J SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed switching and driver applications. Q UICK REFERENCE D A T A _

IRF5NJ5305

Abstract: IRF (10A) 55V
Contextual Info: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 94033 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ5305 55V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ5305 -55V RDS(on) 0.065Ω ID -22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRHNJ53230

Abstract: IRHNJ54230 IRHNJ57230 IRHNJ58230
Contextual Info: PD - 93753 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57230 200V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si)

Contextual Info: PD - 94038 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ9540 100V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ9540 -100V RDS(on) 0.117Ω ID -18A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

IRHNA9260

Abstract: IRHNA93260 JANSF2N7426U JANSR2N7426U
Contextual Info: PD - 93969 IRHNA9260 JANSR2N7426U 200V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9260 100K Rads (Si) IRHNA93260 300K Rads (Si)

mosfet motor dc 48v

Abstract: IRHNJ54034 IRHNJ57034 IRHNJ58034 IRHNJ53034
Contextual Info: PD - 93752A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

Contextual Info: PD - 93752 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57034 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57034 100K Rads (Si) IRHNJ53034 300K Rads (Si) RDS(on) 0.030Ω 0.030Ω ID 22A* 22A* IRHNJ54034

Contextual Info: PD - 93754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57130 100V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57130 100K Rads (Si) IRHNJ53130 300K Rads (Si) RDS(on) 0.060Ω 0.060Ω ID 22A* 22A* IRHNJ54130

smd diode schottky code marking 2F

Abstract: smd D207 2F SMD CODE MARKING 12CTQ 12CTQ035S 12CTQ040S 12CTQ045S 40HFL40S02 IRFP460 SMD-220
Contextual Info: PD-20554 03/99 12CTQ.S Series SCHOTTKY RECTIFIER 12 Amp D2Pak SMD-220 Major Ratings and Characteristics Characteristics Description/Features The 12CTQ.S center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The

IRF (10A) 55V

Contextual Info: PD - 93955 LOGIC LEVEL HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRL5NJ024 55V, N-CHANNEL Product Summary Part Number IRL5NJ024 RDS(on) 0.06Ω BVDSS 55V ID 17A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing

Contextual Info: PD - 93751 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30

IRHNJ57Z30

Abstract: IRHNJ53Z30 IRHNJ54Z30 IRHNJ58Z30 el 803 s
Contextual Info: PD - 93751A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ57Z30 30V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHNJ57Z30 100K Rads (Si) IRHNJ53Z30 300K Rads (Si) RDS(on) 0.020Ω 0.020Ω ID 22A* 22A* IRHNJ54Z30

IRHNJ3130

Abstract: IRHNJ4130 IRHNJ7130 IRHNJ8130
Contextual Info: PD - 93820 IRHNJ7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si)

Contextual Info: PD - 91852C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHNA57064 100K Rads (Si) 0.0056Ω IRHNA53064 300K Rads (Si) 0.0056Ω ID 75*A 75*A IRHNA54064