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    SMD MARKING CODE AADV Search Results

    SMD MARKING CODE AADV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX330BH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF
    BLM15PX600SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN PDF
    BLM21HE601SN1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO PDF
    BLM21HE472BH1L
    		Murata Manufacturing Co Ltd FB SMD 0805inch 4700ohm POWRTRN PDF
    BLM15PX330SH1D
    		Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN PDF

    SMD MARKING CODE AADV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SR52

    Abstract: FY618 SR-52
    Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SR52 FY618 SR-52 PDF

    MT28F1284W18

    Abstract: smd codes marking A21 FY618
    Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM


    Original     		MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd codes marking A21 FY618 PDF

    FY618

    Abstract: FY617
    Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		16-word 16-bit) 09005aef80b425b4 MT28F1284W18 FY618 FY617 PDF

    SMD MARKING CODE AADV

    Abstract: marking SR5 SMD MT28F1284W18 AADV
    Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation


    Original     		MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 SMD MARKING CODE AADV marking SR5 SMD AADV PDF

    Contextual Info: 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W256KW16BEGB 16-word 09005aef8329f3e3 09005aef82e419a5 PDF

    smd transistor bq

    Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
    Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM


    Original     		MT28F1284W18 56-Ball 16-word 16-bit) 09005aef80b425b4 MT28F1284W18 smd transistor bq A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150 PDF

    Contextual Info: Advance‡ 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BKGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC


    Original     		MT45W4MW16BKGB 09005aef826b4c74/Source: 09005aef826b4cf6 PDF

    Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f PDF

    Contextual Info: Preliminary‡ 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W512KW16BEGB 16-word 09005aef82e41987/Source: 09005aef82e419a5 PDF

    smd code marking HD

    Abstract: linear technology part numbering smd code Ub SMD MARKING CODE h5
    Contextual Info: 8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W512KW16BEGB 16-word 09005aef82e41987 09005aef82e419a5 smd code marking HD linear technology part numbering smd code Ub SMD MARKING CODE h5 PDF

    Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f PDF

    Contextual Info: Preliminary‡ 4Mb: 256K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W256KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W256KW16BEGB 16-word 09005aef8329f3e3/Source: 09005aef82e419a5 PDF

    psram

    Contextual Info: Preliminary‡ 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f psram PDF

    P24Z

    Abstract: MT45W2MW16BGB SMD MARKING CODE h5
    Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W2MW16BGB 16-word 09005aef82832fa2 09005aef82832f5f P24Z MT45W2MW16BGB SMD MARKING CODE h5 PDF

    A192

    Abstract: P24Z
    Contextual Info: 32Mb: 2 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM 1.0 Memory MT45W2MW16BGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages


    Original     		MT45W2MW16BGB 16-word 09005aef82832fa2/Source: 09005aef82832f5f A192 P24Z PDF

    16MB_BURST_CR1_0_P23Z

    Abstract: active suspension sensor MT45W1MW16BDGB
    Contextual Info: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages:


    Original     		MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667 16MB_BURST_CR1_0_P23Z active suspension sensor MT45W1MW16BDGB PDF

    Contextual Info: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667 PDF

    Contextual Info: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667 PDF

    Contextual Info: 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		MT45W1MW16BDGB 09005aef81cb58ed 09005aef81c7a667 PDF

    Contextual Info: Advance‡ 16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM Memory MT45W1MW16BDGB For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and


    Original     		MT45W1MW16BDGB 09005aef81cb58ed/Source: 09005aef81c7a667 PDF

    Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ


    Original     		128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 PDF

    MT45W8MW16BGX-7013LWT

    Abstract: MT45W8MW16 FBGA DECODER MT45W8MW16BGX
    Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Async/ Page/Burst CellularRAM 1.5 Memory Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC


    Original     		128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 MT45W8MW16BGX-7013LWT MT45W8MW16 FBGA DECODER MT45W8MW16BGX PDF

    Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ • Random access time: 70ns


    Original     		128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 PDF

    cr1 5 p26z

    Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ


    Original     		128Mb: MT45W8MW16BGX 09005aef80ec6f79/Source: 09005aef80ec6f65 cr1 5 p26z PDF