SMD MARKING A7 Search Results

max 32321

Abstract: E2 SMD Transistor 32321 smd MT5C1009 576 431 SMD CODE MARKING 5962-89598 MT5C1009C25 smd a10 SMD A8 smd code marking A8
Contextual Info: SRAM MT5C1009 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT Top View WITH CHIP & OUTPUT ENABLE 32-Pin DIP (C, CW) 32-Pin SOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS •SMD 5962-89598 •MIL-STD-883

A7W 85

Abstract: BAV99 A7w
Contextual Info: Product specification BAV99 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Repetitive peak forward current: max.450 mA. 1 0.55 High switching sped: max.4 ns. +0.1 1.3-0.1 +0.1 2.4-0.1 Small plastic SMD package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05

smd transistor marking a7

Abstract: amplifier A62 marking A76A LMV711 LMV712 LMV712BL LMV712BLX LMV712LD LMV712LDX LMV712MM
Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They

smd code marking A8

Abstract: WS27C256L WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

WS27C256L

Abstract: capacitor, 1000 microfarad and 35 volts WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

Contextual Info: LMV981 RRIO, 1.8V, Operational Amplifier in micro SMD with Shutdown General Description Features The LMV981 is a single low voltage, low power operational amplifier. LMV981 is guaranteed to operate from +1.8V to +5.0V supply voltages and have rail-to-rail input and output.

TRANSISTOR SMD MARKING CODE fk

Abstract: smd transistor marking wa dec 310
Contextual Info: PTH03000W —3.3-V Input 6-A, 3.3-V Input Non-Isolated Wide-Output Adjust Power Module SLTS200C – MAY 2003 – REVISED DECEMBER 2003 Features NOMINAL SIZE = 0.75 in x 0.5 in 19,05 mm x 12,7 mm • Up to 6-A Output Current • 3.3 V Input Voltage • Wide-Output Voltage Adjust

Contextual Info: Formosa MS Chip General Purpose Rectifiers FM4001-S THRU FM4007-S List List. 1 Package outline. 2

Contextual Info: Formosa MS Chip General Purpose Rectifiers FM4001-M THRU FM4007-M List List. 1 Package outline. 2

Contextual Info: Formosa MS FM4001-M H THRU FM4007-M H Chip General Purpose Rectifiers List List. 1 Package outline. 2

smd marking g8

Contextual Info: Standard Products RadHard Eclipse FPGA Family 6250 and 6325 Advanced Data Sheet June 16, 2006 www.aeroflex.com/RadHardFPGA FEATURES ‰ Comprehensive design tools include high quality Verilog/ VHDL synthesis and simulation ‰ QuickLogic IP available for microcontrollers, DRAM

57C49C-45

Abstract: WS57C49C WS57C49C-25D 57C49C-25 57C49C-35 57C49C-55 57C49C-70 WS57C49C-25J WS57C49C-25S 10 35L CAPacitor
Contextual Info: WS57C49C HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time • Pin Compatible with Bipolar PROMs • Immune to Latch-UP — t ACC = 25 ns — t CS = 12 ns — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V

Contextual Info: 54LCX245 Low Voltage Bidirectional Transceiver with 5V Tolerant Inputs and Outputs General Description Features The LCX245 contains eight non-inverting bidirectional buffers with TRI-STATE outputs and is intended for bus oriented applications. The device is designed for low voltage

QP7C261-25WMB

Abstract: QP7C261-55WMB 5962-87515053a 5962-8751509 QP7C264 5962-8751501 CY7C263 qml-38535 5962-87515123A 5962-8751507LA
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED A Add six new device types for vendor CAGE number 65786. Add vendor CAGE number 1FN41 as a source of supply for devices 01KX, 02KX, 03KX, and 04KX. Change to vendor similar part number for vendor CAGE number 1FN41. Change to margin test method A for

smd marking S3A

Abstract: LT 4320
Contextual Info: AMD i t REVISIONS LTR DATE YR-MO-OA DESCRIPTION Add CAGE number 34335 as approved source fo r 01 device. Add CAGE number 66579, f o r devices 01 through 04, Add device 04, deleted foo tnote 4/ from t g . c o n d itio n b lo ck, added foo tnote 4/ to c o n d itio n b lo c li. Removed te s t con d itio n C. Made

SPT0305

Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Contextual Info: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

CSN-11

Abstract: MT46H64M32L2KQ 168B micron lpddr lpddr smd code marking CK BA121 Marking Code TI OMAP micron marking code information marking code micron label
Contextual Info: Preliminary‡ 168-Ball x32 Mobile LPDDR PoP TI OMAP Addendum Features Mobile LPDDR Addendum 168-Ball Package-on-Package (PoP) WFBGA TI OMAP MT46HxxxMxxL2KQ Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS)

MT41K256M32

Abstract: MT41K 256M32 MT41K256M16 MT41K256M32SGB-125M MT41K256M3 MT41K256M MT41K256 MT41K256M16 SPD FBGA DDR3 x32
Contextual Info: Preliminary‡ 8Gb: x32 TwinDie DDR3Lm SDRAM Description TwinDie 1.35V DDR3Lm SDRAM MT41K256M32 – 32 Meg x 32 x 8 Banks Description Options Marking • Configuration – 32 Meg x 32 x 8 banks • FBGA package Pb-free – 136-ball FBGA (10mm x 14mm x 1.2mm) Rev. E

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Updated to current MIL-PRF-38535 requirements. lht 13-04-17 APPROVED Charles F. Saffle REV SHEET REV A A A A A A A A A A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATUS

LVX3245

Abstract: marking code AE SMD Transistor
Contextual Info: 54LVX3245 8-Bit Dual Supply Translating Transceiver with TRI-STATE Outputs General Description Features The LVX3245 is a dual-supply, 8-bit translating transceiver that is designed to interface between a 3V bus and a 5V bus in a mixed 3V/5V supply environment. The Transmit/Receive

smd code marking rac

Abstract: HYB3118160 HYB5118160 RAD SMD MARKING CODE
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Fast Page Mode HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 tRAC

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Corrected maximum output update rate test, fDAC, in Table I from 2.4 min to 2.4 max. Added differential data interface section in Table I which includes Tsetup, Thold tests. Added delay lock loop (DLL) section in Table I which includes

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet April 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q QML Q & V compliant part check factory for availability

Contextual Info: Standard Products UT28F256 Radiation-Hardened 32K x 8 PROM Data Sheet October 2001 FEATURES q Programmable, read-only, asynchronous, radiationhardened, 32K x 8 memory - Supported by industry standard programmer q 45ns and 40ns maximum address access time -55 oC to