SMD DIODE LC 61 Search Results

SFH6112

Abstract: Siemens optocoupler sfh610 SFH610 Siemens optocoupler sfh610A SFH611A-4 SFH6186T-3 Siemens sfh615 optocoupler SFH611-3 SFH611A-3 sfh610 equivalent
Contextual Info: SFH6106T SFH6116T SFH6156T SFH6186T SFH6206T SFH6286T SIEM EN S 5883 5.3 kV TRIOS HIGH RELIABILITY OPTOCOUPLERS FEATURES • SMD Versions of SFH610, 611,615,618, 620,628 • Available on Tape and Reel Suffix T • TRIOS — tansparent lOn Shield Package Dimensions in Inches (mm)

30N60

Contextual Info: OIXYS Prelim inary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S v CES ^C25 vCE sat tfi 600 V 60 A 1.8 V 130 ns Combi Pack TO-247 SMD (30N60BU1S) Symbol Test Conditions VCES ^ VCGR Maximum Ratings C (TAB) = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 MO

IXSH24N60A

Contextual Info: □ IXYS HiPerFAST IGBT with Diode / IXSH24N60U1S IXSH24N60U1 IXSH24N60AU1 / IXSH24N60AU1S V CES ^C25 V C E sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V v CGR T d = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

smd diode 819

Abstract: 30n60
Contextual Info: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO

smd diode 819

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S CES C25 v CE sat t Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 V vt cgr Tj = 25°C to 150°C; RGE = 1 M n 600 V Maximum Ratings v GES Continuous ±20 V v GEM Transient +30 V ^C25 Tc = 25“C

40N30BD1

Contextual Info: DIXYS HiPerFAST IGBT IXGH40N30BD1 IXGH40N30BD1S CES ^C25 V CE sat t 300 V 60 A 2.4 V 75 ns Preliminary data Symbol Test Conditions v CES ^ = 25°C to 150°C VCGR TJ = VGES 300 V 300 V Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25° C 60 A 'c s o

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

.24n50

Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
Contextual Info: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C

SMD Transistor 1f

Abstract: 10v ZENER DIODE 100w audio amplifier circuit diagram class D 100w audio amplifier pcb 100w mosfet audio amplifier circuit diagram 100W sub amplifier 100w audio amplifier circuit diagram per channel 12v 100w amplifier 12v 100w AUDIO AMPLIFIER CIRCUIT 100w audio amplifier circuit diagram
Contextual Info: ZXCD100MOEVAL 100W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Class D architecture The ZXCD100MOEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high

Contextual Info: □IXYS Preliminary data IXGH22N50BU1 IXGH22N50BU1S HiPerFAST IGBT with Diode V CES 500 V 44 A 2.1 V 55 ns ^C 25 V CE(sat)typ Combi Pack ^fi(typ) ?C G f| TO-247 SMD* Symbol Test Conditions V VCGH Ta= 25°C to 150°C v oE Maximum Ratings m T,J = 25°C to 150°C; FU

power amplifier 3000W with PCB

Abstract: 3000w audio amplifier 500w car audio amplifier circuit diagram schematic Class D 1KW RMS audio amplifier 12v 1200W AUDIO AMPLIFIER IRFB4227 1200w power amplifier circuit diagram 12v 600W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 3000w inverter circuit diagram 3000w transistor audio amplifier circuit diagram
Contextual Info: IRAUDAMP9 1.7 kW / 2-Ω Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:

MJI-25

Contextual Info: □ IXYS P re lim in a ry D a ta S h e e t IXGH32N50BU1 IXGH32N50BU1S HiPerFAST IGBT with Diode Combi Pack V CES ^C25 V CE sat *fi TO-247 SMD (32N50BU1S) Symbol Test Conditions V CES T j = 25°C to 150°C 500 V v CGR T j = 25 °C to 150°C; RQE = 1 Mi2

diagram for a 12v 250w power amplifier

Abstract: 250w audio amplifier circuit diagram 200w audio amplifier circuit diagram class D IRS20957S IRAUD
Contextual Info: IRAUDAMP6 250W/8Ω x 2 Channel Class D Audio Power Amplifier Using the IRS20957S and IRF6785 By Jun Honda, Jorge Cerezo and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP6 Demo board;

DSR3241

Abstract: SCHEMATIC 3000w Power Amplifier power amplifier 3000W with PCB IRFB4227 schematic Class D 1KW RMS audio amplifier schematic diagram 48V 500W Controller SmD TRANSISTOR a82 3000w transistor audio amplifier circuit diagram 3000w audio amplifier irs2092
Contextual Info: IRAUDAMP9 1.7 kW / 2-Ω Single Channel Class D Audio Power Amplifier Using the IRS2092S and IRFB4227 By Israel Serrano and Jun Honda CAUTION: International Rectifier recommends the following guidelines for safe operation and handling of IRAUDAMP9 demo board:

smd diode 819

Abstract: rg33c
Contextual Info: Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode V CES ^C25 V CE sat Combi Pack ^fi ?C = = = = 600 V 60 A 2.5V 80 ns G OE Symbol TestConditions v CES Td = 25°C to 150°C 600 V v CGR Td = 25°C to 150°C; RGE = 1 Mil 600 V VGES

H618A

Contextual Info: SFH618A/628A SIEMENS PHOTOTRANSISTOR, 5.3 kVTRIOS LOW CURRENT INPUT OPTOCOUPLER Package Dim ensions in Inches mm <2i rf> FEATURES • Very High CTR at lF=1 mA, VCE=0.5 V - SFH618A-2, 63-125% - S F H 6 18A -3 ,100-200% - S F H 6 18A -4 ,160-320% Qj 4 l C o lle c to r

SG2803

Contextual Info: SG2800 SERIES 5ILICDN HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS LINEAR INTEG RATED C IRCUITS DESCRIPTION FEATURES The SG2800 series integrates eight NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military, aerospace, and industrial applications that require

transistor SMD t17

Abstract: BAT17-04 250 B 340 smd Transistor BAT17-06 smd diode marking Av BAT17-05 bat17 Diode 1_b SMD
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT17-04;BAT17-05;BAT17-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 For high-speed switching application 0.55 For mixer applications in VHF/UHF range 2 +0.1 0.95-0.1 +0.1 1.9-0.1

ASK receiver superheterodyne

Abstract: fm frontend SMD DIODE L4 DATASHEET ASK DEMODULATOR circuit superhet B3569 B3570 HC49 LQFP32 SFE10
Contextual Info: TH71112 868/915MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver Features ! ! ! ! ! ! ! Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation with phase-coincidence demodulator

smd diode marking 77

Abstract: BAT68 BAT68-04 BAT68-05 BAT68-06
Contextual Info: Diodes SMD Type Silicon Schottky Diode BAT68;BAT68-04 BAT68-05;BAT68-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 For high-speed switching application 0.55 For mixer applications in VHF/UHF range +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1

Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

D 1991 AR

Abstract: BDS60 BDS60A BDS60B BDS60C
Contextual Info: SbE ]> • PHILIPS INTERNATIONAL Data sheet status Product specification date of issue April 1991 711Dfl2ti ODMBllfi EGS M P H I N T-33-3/ BDS60/60A/60B/60C PNP silicon Darlington power transistors PINNING - SOT223 DESCRIPTION DESCRIPTION base collector emitter

IXGH20N60BU1

Abstract: IXGH20N60BU1S HIPERFAST IGBT WITH DIODE IXGH20N60BU1 TO-247 IXYS DIODE SMD GEM TAA 521 D
Contextual Info: □ IXYS Preliminary data IXGH20N60BU1 IXGH20N60BU1S HiPerFAST IGBT with Diode V CES ^C 25 V CE(sat)typ Combi Pack *fi(typ) = 600 V = 40 A = 1.7 V = 100 ns TO-247 SMD* Symbol Test Conditions V v CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i

12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: Capacitor X7R 100n 50V 1206 zener smd diode 16v 1w uCapacitor X7R 100n 50V 1206u class D audio power amplifier phillips 12v 50W AUDIO AMPLIFIER CIRCUIT DIAGRAM NO USED IC 22u smd capacitor 1u 63V BTL audio 50W pot 100K smd
Contextual Info: ZXCD50STEVAL 50W CLASS D AUDIO AMPLIFIER EVALUATION BOARD DESCRIPTION FEATURES • Stereo The ZXCD50STEVAL evaluation board is based on the ZXCD1000 Class D audio amplifier solution from Zetex. This board allows the user to evaluate the high fidelity audio performance offered by the Zetex solution, with