SMD DIODE CODE S1 Search Results

Contextual Info: Bridge Diode SMD/DIP •外観図 OUTLINE S1NB□ Unit : mm Package：1N（SMD） 800V 1A 6.8 ④ 特長 • 小型 SMDパッケージ または • 小型 DIP パッケージ 級表示（例） Class S1NB 6094 ② ロット記号（例） ③ Date code

smd diode A2

Abstract: A2 diode smd BO15N
Contextual Info: CAT.No.TU158 中容量 SMD型 ダイオードアレイ MEDIUM POWER SMD DIODE ARRAY S1NAD80 外形寸法 Outline Dimensions Package：1NA ③ ロット記号 Date code （1.5） 10 +-0.3 A K AD 80 BO15N （1.2） （8.7） 管理番号 Control No. ソルダリングパットの参考パターン

Z60N

Contextual Info: Bridge Diode Dual In-Line Package OUTLINE S1ZB Package 1Z 800V 0.8A • • Unit : mm Weight : 0.13 typ. SMD ④ ① ④− ＋① ③~ ∼② Z62N DIP 品名略号 Type No. ③ ロット記号（例） ② Date code Feature • Small-DIP • High-Reliability

s1nb

Contextual Info: Bridge Diode Dual In-Line Package OUTLINE S1NB 6.8 800V 1A ④ 品名略号 Type No. • Unit : mm Weight : 0.29g typ. Package 1N SMD DIP 級表示（例） Class Feature ① S1NB 6094 ①＋ ③~ ②∼ 10 ② ロット記号（例） ③ Date code • Small-DIP

smd diode code g3

Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode S4

Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

Diode smd s6 68

Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

SMD MARKING code L1

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode code mj

Abstract: smd diode code SL
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS

smd diode S6

Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

SMD MARKING QG 6 PIN

Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode S4

Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

smd diode g6

Abstract: smd S4 36 SMD diode MARKING CODE g6 smd g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

S4 42 DIODE

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions

smd diode code SL

Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

smd diode code SL

Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS

Contextual Info: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode

smd diode code mj

Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C

smd diode code SL

Abstract: smd diode code mj
Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20

smd diode S6

Abstract: smd diode code s6 S6 diode s6 smd code smd diode code ja smd diode code A 064d S1ZA20 smd diode code m 013g
Contextual Info: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1ZA□ Unit : mm Weight : 0.13g （typ.） Package：1Z 600V 1.1A ④ 特長 品名略号 Type No. • SMD • ツイン • 耐湿性に優れ高信頼性

S1NAD80

Abstract: 014N smd diode code ja 029g
Contextual Info: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1NAD80 Unit : mm Weight : 0.29g （typ.） Package：1NA 800V 3A 6.8 ④ 特長 極性記号 Terminal direction • SMD • ツイン • 耐湿性に優れ高信頼性

smd diode marking ja

Abstract: DIODE SMD CODE MARKING 35 SMD MARKING CODE 102 SMD MARKING CODE 014n SMD diode MARKING CODE 10 014N smd diode code ja ad 68 smd code DIODE smd marking smd diode marking code
Contextual Info: 面実装デバイス アレイ型 Twin Diode Surface Mounting Device Diode Array •外観図 OUTLINE S1NAD80 Unit : mm Weight : 0.29g （typ.） Package：1NA 800V 3A 6.8 特長 極性記号 Terminal direction • SMD • ツイン • 耐湿性に優れ高信頼性

DIODE marking S6 57

Abstract: DIODE marking S4 57 smd diode code s1 96 GMM3x60-015X1 DIODE marking S6 96 smd diode .S6 22 smd diode S4 96 smd diode g6 Control of Starter-generator S4 DIODE
Contextual Info: GMM3x60-015X1 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings

SMD mosfet MARKING code TC

Abstract: smd diode g6 SMD MARKING CODE s4 IF110 diode L2 smd smd diode code g3 smd diode code g6 smd diode marking code L2 Control of Starter-generator DIODE marking S6 57
Contextual Info: GMM3x60-015X2 Three phase full Bridge VDSS = 150 V = 57 A ID25 RDSon typ. = 17 mW with Trench MOSFETs in DCB isolated high current package L1+ L2+ G1 G3 G5 S1 S3 S5 L1 L2 G4 G6 G2 S2 L3+ L3 S4 S6 L1- L2- L3- Applications MOSFETs Conditions Maximum Ratings