smd diode code g3
Abstract: smd diode code g4 smd diode g6 DIODE S4 39 smd diode smd diode S4 smd diode code mj smd diode S6 DIODE marking S4 45 SMD S6 55 A smd diode code SL SMD diode MARKING CODE g6
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 160-0055X1 VDSS = 55 V ID25 = 160 A RDSon typ. = 2.3 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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160-0055x1160-0055x1-bl160-0055x1-sl160-0055x1-smd+10smd diode code g3smd diode code g4smd diode g6 diode s4 39 smd diodesmd diode s4smd diode code mjsmd diode s6diode marking s4 45smd s6 55 asmd diode code slsmd diode marking code g6
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smd marking code 8A
Contextual Info: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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cgr860t-go-220ac50eristicsqw-bg020+28fr060tsmd marking code 8a
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CGR860T-G
Abstract: General Purpose Rectifier
Contextual Info: Comchip General Purpose Rectifiers SMD Diode Specialist CGR860T-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50) 0.153(3.90)
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cgr860t-go-220acqw-bg0208fr060t+1general purpose rectifier
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smd diode S4
Abstract: smd diode code g3 SMD MARKING CODE 503 K smd diode S6 S4 DIODE S6 diode smd diode marking code L2 SMD MARKING g3 smd diode code s6 SMD MARKING g5
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3diod00720070628b220-004p3-sl+11220-04p3-blsmd diode s4smd diode code g3smd marking code 503 ksmd diode s6s4 diodes6 diodesmd diode marking code l2smd marking g3smd diode code s6smd marking g5
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Contextual Info: Comchip Efficient Fast Recovery Rectifiers SMD Diode Specialist CEF860LT-G Reverse Voltage: 600 V Forward Current: 8.0 A RoHS Device Features TO-220AC -Soft recovery characteristic. 0.108 2.75 -Low forward voltage. -Low recovery loss. 0.413(10.50) 0.374( 9.50)
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cef860lt-go-220acqw-be0118lfr060t |
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6 pin TRANSISTOR SMD CODE PA
Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
Contextual Info: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol
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buz22smdq67042-s4139dsj146 pin transistor smd code pa+8buz22smd code buzsmd rgsbuz22 smddiode smd code smph smd transistor phsmd transistor a7jtransistor smd xd
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transistor smd MJ 145
Abstract: d 132 smd code diode d 132 smd diode qd SMD SMD TRANSISTOR qd BUZ31 smd rgs smd diode 145
Contextual Info: Infineon technologies BUZ 31 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds ¡D ^DS(on) Package Ordering Code BUZ 31 SMD 200 V 14.5 A 0.2 Q D:PAK Q67042-S4131 Maximum Ratings Parameter
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q67042-s4131np-60transistor smd mj 145d 132 smd code diode+6d 132 smd diodeqd smdsmd transistor qdbuz31smd rgssmd diode 145
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Diode smd s6 68
Abstract: S4 42 DIODE smd diode g6 DIODE S4 39 smd diode DIODE marking S6 77 smd diode g6 smd diode S6 Diode smd s6 68 g1 S3 marking DIODE smd diode code 03a smd diode marking 77
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110a0-0085x1+13100-085x1-sl100-085x1-smd100-0085x1diode smd s6 68s4 42 diodesmd diode g6 diode s4 39 smd diodediode marking s6 77smd diode g6smd diode s6diode smd s6 68 g1s3 marking diodesmd diode code 03asmd diode marking 77
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SMD MARKING code L1
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode marking code L2 smd diode S6 DIODE smd marking l3 smd diode s4 smd diode code mj smd diode g5 SMD MARKING g5 SMD mosfet MARKING code TJ
Contextual Info: GWM 180-004X2 Three phase full Bridge VDSS = 40 V = 180 A ID25 RDSon typ. = 1.9 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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180-004x2if110id1101004x2+12180-004x2-sl180-004x2-smdsmd marking code l1smd diode g6 diode s4 39 smd diodesmd diode marking code l2smd diode s6diode smd marking l3smd diode s4smd diode code mjsmd diode g5smd marking g5smd mosfet marking code tj
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smd diode code mj
Abstract: smd diode code SL
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055p3smd diode code mjsmd diode code sl |
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smd diode S6
Abstract: smd diode S4 S4 DIODE SMD MARKING g5 smd diode g5 smd diode g6 Diode S4 g1 smd diode S3 marking DIODE SMD MARKING s6
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V =1 80 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3220-003p3-smd20081126fsmd diode s6+9smd diode s4s4 diodesmd marking g5smd diode g5smd diode g6diode s4g1 smd diodes3 marking diodesmd marking s6
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A7 SMD TRANSISTOR
Abstract: smd JH transistor smd diode a7 smd transistor A7 SMD a7 Transistor 6 pin TRANSISTOR SMD CODE 21 smd transistor js BUZ21 smd diode os smd transistor A7 s 50
Contextual Info: Infineon technologies BUZ 21 SMD SIPMOS Power T ransistor • N channel • Enhancement mode tab • Avalanche-rated Pin 1 Pin 2 Pin 3 c? (/> D Type BUZ 21 SMD 100 V 1D R OS(on) 21 A 0.085 Í2 Package d 2p a k Ordering Code Q67042-S4132 Maximum Ratings
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buz21q67042-s4132a7 smd transistorsmd jh transistor+7smd diode a7smd transistor a7smd a7 transistor6 pin transistor smd code 21smd transistor jssmd diode ossmd transistor a7 s 50
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SMD MARKING QG 6 PIN
Abstract: smd diode code g4 SMD DIODE DEVICE sl smd diode marking 77 smd marking SL SMD diode NC All smd diode marking smd diode l2 smd diode S6 smd diode MARKING 03A
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110100-085x1-smd+11100-0085x1smd marking qg 6 pinsmd diode code g4smd diode device slsmd diode marking 77smd marking slsmd diode ncall smd diode markingsmd diode l2smd diode s6smd diode marking 03a
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smd diode S4
Contextual Info: GWM 220-004P3 Three phase full Bridge VDSS = 40 V ID25 = 190 A RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings
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220-004p3100-01x1-smd20070906csmd diode s4 |
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S4 42 DIODE
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode S4 28 DIODE S4 37
Contextual Info: GWM100-0085X1 VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mΩ Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1if110id110100-0085x1-smd+5100-0085x1s4 42 diodesmd diode g6 diode s4 39 smd diodesmd diode s4 28diode s4 37
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S4 42 DIODE
Abstract: smd diode S6 smd diode code g3 DIODE marking S6 77 smd diode g6 DIODE S4 39 smd diode smd diode code g4 smd diode code g2 SMD SL DIODE S4 37
Contextual Info: GWM100-0085X1 Three phase full Bridge VDSS = 85 V = 103 A ID25 RDSon typ. = 5.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Conditions
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gwm100-0085x1id110if110100-0085x1+10100-0085x1-smds4 42 diodesmd diode s6smd diode code g3diode marking s6 77smd diode g6 diode s4 39 smd diodesmd diode code g4smd diode code g2smd sldiode s4 37
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smd rgs
Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
Contextual Info: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter
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q67042-s4133smd rgssmd transistor flsmd code buz+77c smd transistorsmd transistor qdsm-38 transistorsmd diode 681smd transistor dssmd transistor ds 65diode buz smd
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smd diode code SL
Abstract: smd diode g6 DIODE S4 39 smd diode smd diode code g3 SMD mosfet MARKING code TC S4 SMD Marking Code SMD MARKING CODE s4 smd diode code g4 smd diode code s3 smd diode marking s4 smd diode S6
Contextual Info: GWM 160-0055P3 Three phase full Bridge VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055p3smd diode code slsmd diode g6 diode s4 39 smd diodesmd diode code g3+7smd mosfet marking code tcs4 smd marking codesmd marking code s4smd diode code g4smd diode code s3smd diode marking s4smd diode s6
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smd diode code SL
Abstract: smd diode code g3 smd diode .S6 22 smd diode S2 Marking Code KEY smd diode g5 SMD mosfet MARKING code TJ smd code marking SL S6 39 diode DIODE S4 39
Contextual Info: GWM 160-0055X1 Three phase full Bridge VDSS = 55 V ID25 = 160 A RDSon typ. = 2.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS
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160-0055x120070809csmd diode code slsmd diode code g3+8smd diode .s6 22smd diode s2marking code keysmd diode g5smd mosfet marking code tjsmd code marking sls6 39 diodediode s4 39
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Contextual Info: GWM 160-0055P3 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.0 mW Three phase full Bridge with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G3 G5 S3 S5 L1 L2 L3 G2 S2 G4 G6 S4 S6 L- Conditions VDSS TJ = 25°C to 150°C Maximum Ratings IF25 IF90 TC = 25°C diode
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160-0055p3 |
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smd diode code mj
Abstract: SMD marking code 542 smd diode code g6 9 GWM 100-01X1 smd diode code g4 smd marking BL smd diode code s6 welding mosfet smd diode g6 DIODE S4 39 smd diode TR 505 diode
Contextual Info: Advanced Technical Information Three phase full Bridge GWM 100-01X1 VDSS = 100 V ID25 = 90 A RDSon typ. = 7.5 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Symbol Conditions VDSS TJ = 25°C to 150°C
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100-01x1160-0055p320070706asmd diode code mj+9smd marking code 542smd diode code g6 9gwm 100-01x1smd diode code g4smd marking blsmd diode code s6welding mosfetsmd diode g6 diode s4 39 smd diodetr 505 diode
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2N7002H
Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2
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2n70021000hoursjesd22-a108-cjesd22-b102-d+6168hoursjesd22-a102-cjesd22-a104-b10min/10min2n7002h
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2N7002H
Abstract: 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking
Contextual Info: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2
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2n7002jesd22-a108-c1000hoursjesd22-b102-d+13168hoursjesd22-a102-c10minjesd22-a104-b2n7002h2n7002-hrg 702 diodesmd diode 2n7002 marking code2n7002 markingdiode smd marking 702jesd22-a108cpower mosfet p1 smd marking code2n7002 smd marking
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smd diode code SL
Abstract: smd diode code mj
Contextual Info: GWM 120-0075P3 Three phase full Bridge VDSS = 75 V ID25 = 125 A RDSon typ. = 3.7 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 L- Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20
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120-0075p320070628bsmd diode code slsmd diode code mj |
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