SMD DIODE 132 Search Results

Contextual Info: P h ilips Sem iconductors Product specification High-speed diode BAS55 FEATURES DESCRIPTION • Small plastic SMD package The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23

JST SOT-23

Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
Contextual Info: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805

d 132 smd diode

Contextual Info: Schottky Barrier Diode Twin Diode M fm OUTLINE Package : STO-220 DF20JC10 Unit-mm Weight 1.5g Typ 10.2 100V 20A Feature • SMD • <SlR=0.7mA • SMD • S iy R T È Î E iË c I l_y (<_ <L U'' • Resistance for thermal run-away • High lo Rating-Small-RKG

zener smd diode 101

Abstract: ZENER DIODE t2 201 Zener diode CZRC5348 CZRC5349 CZRC5350 CZRC5351 CZRC5352 CZRC5388 SMD DIODE 517
Contextual Info: COMCHIP Surface Mount Zener Diode SMD DIODE SPECIALIST CZRC5348 Thru CZRC5388 Voltage: 11 - 200 Volts Power: 5.0 Watts Features For surface mounted applications in order to optimize board space Low profile package Glass passivated junction Low inductance Built-in strain relief

SMD TRANSISTOR L6

Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
Contextual Info: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155

d 132 smd diode

Contextual Info: RB400D is — K /D io d e s R B 400D JUxllaiEv a y 3* — K Silicon Epitaxial General Use Rectifying Schottky Barrier Diode • W fé \r5 È I2 !/Dimensions Unit : mm 7T&Z 1) (SMD)0 2) ra iB H ’P & 5 o 3) Bio eig i • Features 1) Surface mount type (SMD).

Contextual Info: Rectiier Diode Surface Mounting Device Single Diode OUTLINE M1FE40 400V 2A • • • Unit : mm Weight : 0.027g typ. Package M1F 2.8 カソードマーク Cathode mark ① SMD E88 1.8 ＋① ②− ② ロット記号（例） Date code 品名略号 Type No.

smd diode marking JC

Abstract: SMD MARKING CODE 103 SMD MARKING CODE 2A DIODE SMD 10A smd diode marking code 2a smd diode marking 2a SMD MARKING CODE 39 diode smd marking BUF SMD DIODE MARKING 14 smd diode marking ja
Contextual Info: 面実装デバイス 単体型 Rectifier Diode Surface Mounting Device Single Diode •外観図 OUTLINE M1FE40 Unit : mm Weight : 0.027g （typ.） Package：M1F 400V 2A 2.8 カソードマーク Cathode mark 特長 E88 ① • 小型 SMD • 耐湿性に優れ高信頼性

hm marking smd DIODE

Abstract: DF20JC10 TC121 SHINDENGEN DIODE DIODE marking VU
Contextual Info: Schottky Barrier Diode Twin Diode mnm DF20JC10 o u tlin e 100V 20A Feature • SM D • SMD • filR = 0 .7 m A • L o w lR =0.7m A • jw is æ ç ë c u ic < L ' • Resistance for thermal run-away • High lo Rating -Small-PKG • y -S P C .L C D t-^ ^

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE10SC4 Unit-mm Weight 0.326g Typ 40 V 10A Feature • SM D >SMD • Tj=150°C 1Tj=150°C • P r r s m T ’A ' ^ V S ' i f S l i E 1 P r r s m Rating 1 High lo Rating -Small-PKG Main Use

10SC4

Contextual Info: Schottky Barrier Diode Twin Diode l ^ t l l OUTLINE Package : E-pack DE10SC4 Unit: mm Weight 0.326tf Typ 4 0 V 10 A Feature G6 • SM D • SMD • P rrsm 7 ' K 5 > î / x (SSE • Prrsm Rating Type wo I H igh lo R a tin g -S m a ll-P K G 10SC4 p -/Hü»XM

smd diode 949

Abstract: transistor SMD 361 C120T101 diode c05*10 varistor 60 volt C050T331 C050T4R7 varistors rfe transistor a 949 JMV0402C050T120
Contextual Info: MULTILAYER CHIP VARISTOR JMV C Series: SMD ESD & EMI MOV INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

10sc4

Abstract: f 10sc4 diode smd marking S0 smd diode JF smd m7 ssie DE10SC4 smd marking S0
Contextual Info: Schottky Barrier Diode Twin Diode m tm m o u t lin e Package I E-pack DE10SC4 U nit I mm Weight 0.326k T yp 4 0 V 10 A Feature 6.6 • SMD • SM D • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm Rating Type \"u 1 High lo R ating-Sm all-PK G 5 • DC/DC □ V K — '

SMD Diode S140

Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Contextual Info: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in

Diode marking m7

Abstract: smd m7 smd marking 5G DF10SC6
Contextual Info: Schottky Barrier Diode Twin Diode m tm m o u t lin e DF10SC6 60 V 10A Feature • SMD • SM D • PRRSMÿ7/ ' C 5 > î / x < S l I • P brsm R ating Main Use • S w itc h in g R eg u la to r • DC/DC n y K —5> • D C /D C C o n v e rte r • m m . • r - A .o A tin

f20lc

Abstract: SF5LC20U 20LC20u D200LC40B smd 10 20U D200L DIODE 542 SMD
Contextual Info: S u p e r F a s t R e c o v e r y D io d e s Twin Diodes Absolute Maximum Ratings Electrical Characteristics |R t rr 0j/ Vf Parts No. V rm lo Conditions I fsm max Conditions (max) [V] [A] If VR=VRM [°C] [A] [A] [mA] 132 125 81 61 45 [V] 0.98 1.3 0.98 1.3

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

us power supply atx 250w schematic

Abstract: VIPER27h AHB ZVS smd diode R616 l6591 flyback transformer specification zd601 smd diode R622 AHB transformer 1754.0004 Magnetica zd605
Contextual Info: AN3203 Application note EVL250W-ATX80PL: 250W ATX SMPS demonstration board Introduction This application note describes the characteristics and performance of a 250 W wide range input and power factor corrected power supply designed to be used in an ATX application.

mmc6100

Abstract: LL4148WS MAGNETICA TRANSFORMER VIPer27LN VIPER27L viper27 MAGNETICA ferrite TRANSFORMER 20860-001 L6599a MAGNETICA
Contextual Info: AN3339 Application note 185 W power supply with PFC and standby supply for LED TV using the L6564, L6599A, and Viper27LN Introduction This document describes the characteristics and features of a 185 W, wide input mains range, power-factor-corrected, demonstration board for LED TV.

TRANSFORMER ERL35

Abstract: 230v to 12v step down transformer smd transistor w17 ERL35 w12 smd transistor W17 SMD transistor atx power supply schematic dc 600 watts SOT W17 SMD transistor smd transistor w12 230v to 12v ac step down transformer
Contextual Info: PM30006-01 ATX 300W 115Vac/230Vac 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

230v to 12v step down transformer

Abstract: 230v to 12v ac step down transformer TRANSFORMER ERL35 230v to 12v step down transformer ic number 230v to 12v step down transformer circuit ERL35 W17 SMD transistor smps 230V smd transistor w17 1N4148 SMD LL-34
Contextual Info: PM30006-02 ATX 300W 230V 80PLUS SMPS ICs: SG6931, SG6516, SG6858 Contents A. General Spec…………………………P2 B. Schematic…………………………….P3 C. PCB layout……………………………P5 D. BOM………………………………….P7

2SD 4206

Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Contextual Info: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)

IRF3705

Abstract: IC JRC 3860 xbox schematic diagram diode 1n4007 melf smd 1N5822 SMD IRF3705N ac-dc voltage regulator using SCR circuit diagram FAIRCHILD 1n5819 SMD diode EE16 transformer atx NCP1014P
Contextual Info: TND331/D Rev. 0, FEB - 2008 200 W Game Console AC-DC Adapter Reference Design Documentation Package Ă Semiconductor Components Industries, LLC, 2008 February, 2008 - Rev. 0 1 Publication Order Number: TND331/D Disclaimer: ON Semiconductor is providing this reference design documentation package “AS IS” and the recipient assumes

TEMIC K153P

Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
Contextual Info: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2