SMD A17 POWER Search Results

Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27

smd a17

Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A8 A7 A6 Vcc A17 SRAM MEMORY ARRAY 3 2 1 28 27

smd transistor a9

Abstract: a15 SMD A19 SMD smd marking A5 10 35L A16 SMD SMD A18 Transistor SMD a7 Transistor smd diode a5 MT5C1001
Contextual Info: SRAM MT5C1001 Limited Availability Austin Semiconductor, Inc. 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES •

SMD MARKING A16

Contextual Info: SRAM MT5C1001 Limited Availability 1M x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-92316 • MIL-STD-883 A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19 Q WE\ Vss FEATURES • • • • • • • 32-Pin LCC (EC)

Contextual Info: MT5C2561 883C 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SMD 5962-88725 JAN M 38510/293 MIL-STD-883, Class B Radiation tolerant (consult factory) 24L/300 DIP (D-9) A0 C1 -W24 ]Vcc A1 [ 2 23 ]A17 A2 Û3 22 PA16 21 ]A15 A3 A4 20 ]A14

smd a17

Abstract: SCD112
Contextual Info: Power Inductor SMD TYPE SCD112 TYPE FEATURES APPLICATIONS Tolerance of inductance 1~47uH 20% Low profile: 2.2mm Max Suitable for SMD automachine & reflow soldering Mobile phones Digital cameras Pagers Notebook computers PC cards E A 1.6 6.5 SCHEMATICS SCD112

smd A018

Contextual Info: ACT–S512K8 High Speed 4 Megabit Monolithic SRAM Features • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55ns Maximum Access Times ■

CQFP 240 Aeroflex

Abstract: 5962-9461110 military mcm 1553 5962-9461108 5962-9461109 5962-9461108hxc O28 Package 5962-9461109HM 5962-9461110HMC a1855
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

military mcm 1553

Abstract: SMD A18 Transistor O28 Package smd transistor A8 ACT-S512K32V smd A018
Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features 4 Low Power CMOS 512K x 8 SRAMs in one MCM Overall configuration as 512K x 32 • Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

bipolar transistor tester

Abstract: WS512K8-XCX
Contextual Info: White Electronic Designs WS512K8-XCX 512Kx8 SRAM MODULE, SMD 5962-92078 FEATURES Access Times 20, 25, 35, 45ns Organized as 512K x 8 Standard Microcircuit Drawing, 5962-92078 5V Power Supply MIL-STD-883 Compliant Devices Available Low Power CMOS Rad Tolerant Devices Available

smd code F18

Abstract: act-s512k32n 5962-9461110HTC ACT-S512K32N-017P7Q 5962-9461110 CQFP 80 footprint cqfp 280
Contextual Info: ACT–S512K32 High Speed 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8 ■ Input and Output TTL & CMOS Compatible Design ■ Fast 17,20,25,35,45,55ns Access Times

COBRA5272

Abstract: sentec HALO TG110-S050N2 TG110-S050N2 smd diode a9 sub-d9F LM2596 SMD DIODE A13 BLM41PG600SN1L TG110S050N2
Contextual Info: 5 4 3 2 1 D D +3.3V Switcher L2 U4 100nF SMD0805 + + C4 Power D14 LED Low Current + 220µF/10V SMD 1812 R1 1k C3 LM2596-3.3/TO263 Ringkern 35µH 220µF/10V SMD 1812 FB ON/OFF 2 220µF/10V SMD 1812 100nF SMD0805 4 5 OUT D13 B + VIN C12 C1 CON 1 C2 1000µF/35V radial

F16 - 100 HIP

Abstract: F16 100 HIP K8N05
Contextual Info: ÛEROFLEX Features Cl RCJTTECHNOLOGY • Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -5 5 °C to +125°C Temperature Range ■ Input and Output TTL Compatible Design ■ Fast 17,20,25,35,45 & 55nS Maximum Access Times ■ +5 V Power Supply

SKL14

Contextual Info: Power Inductor SMD TYPE SKL143 TYPE FEATURES APPLICATIONS Notebook computers Electric Battery Driving Equipment Magnetic shield Without noise Footprint compatible with most standard servers AT 25 o C: 100KHz, 0.1V PART NO. Lo DCR Isat uH 20% ( ) MAX (Amperes)

smd 5 pin marking a9

Abstract: smd a17
Contextual Info: SRAM MT5C2561 256K x 1 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss FEATURES • • • • High Speed: 35, 45, 55, and 70

SMD MARKING A16

Contextual Info: SRAM MT5C2561 256K x 1 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT Top View AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss FEATURES • • • • High Speed: 35, 45, 55, and 70

smd a17

Abstract: A16 SMD SMD a7 Transistor smd marking A8 smd transistor a4 smd transistor A7 smd transistor marking A5 MT5C2561 SMD a7 S
Contextual Info: SRAM MT5C2561 Austin Semiconductor, Inc. 256K x 1 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-88725 • SMD 5962-88544 • MIL-STD-883 24-Pin DIP (C) (300 MIL) A6 A7 A8 A9 A10 A11 A14 A15 A0 Q WE\ Vss

WMS512K8-XXX

Contextual Info: WMS512K8-XXX HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 ■ Access Times 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Revolutionary, Center Power/Ground Pinout

Contextual Info: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range

Contextual Info: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES  Access Times of 60, 70, 90, 120, 150ns  Low Power CMOS  Packaging  Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: il il il il il il il ii ACT-S512K8 High Speed 4 iviegaoit ivionomnic bKAivi . M Wk M • ■ ■ ■ ■ ■ ■ ■ ■ ■ Features ■ Low Power Monolithic CMOS 512K x 8 SRAM ■ Full Military -55°C to +125°C Temperature Range

ir 035P

Abstract: military multichip
Contextual Info: ACT-S512K32V High Speed 3.3Volt 16 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 512K x 8 SRAMs in one MCM ■ Overall configuration as 512K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35 & 45ns Access Times, 15ns Available by Special Order

Contextual Info: White Electronic Designs WS512K32-XXX 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns TTL Compatible Inputs and Outputs Packaging 5 Volt Power Supply • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP Package 400 .