SMC CASE 403 Search Results

DO-210AA

Abstract: DO29 DO-201AR DO-204AF SOD JEDEC SMC 403-03 403A-03 CB-210 SOD106A jedec 5903
Contextual Info: Geh.-Bez. Case type Diotec Äquivalent Diotec equivalent Geh.-Bez. Case type Diotec Äquivalent Diotec equivalent 1F SMB DO-29 DO-15 / DO-201 2F SMC DO-3 DO-201 / DO-15 / DO-41 267-03 C DO-201 DO-34 – < DO-35 403-03 B SMC DO-35 – 403A-03 B SMB DO-4 DO-4

CASE 403-03

Abstract: SMC 403-03 SMC case 403 403-03
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403–03 ISSUE D DATE 11/21/2001 SCALE 1:1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403-01 THRU -02 OBSOLETE, NEW STANDARD

SMC 403-03

Abstract: CASE 403-03 98ASB42668B SMC case 403
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMC CASE 403−03 ISSUE E DATE 03 AUG 2005 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03.

BJG 36

Contextual Info: SMCJ5.0 thru SMCJ440CA Pb Free Plating Product Pb SMCJ5.0 thru SMCJ440CA 1500W Surface Mount Transient Voltage Suppressors SMC/DO-214AB Mechanical Characteristics z CASE: Void-free, JEDEC DO-214AB Molded Plastic over glass passivated junction. .245 6.22

gex 33

Abstract: GFM 936 GFR 310 129 gez GFM 45 gfp 232 CASE 403-03 GeX 28 GEX MARKING gfk marking
Contextual Info: SMC Devices Maximum die size 104 mil x 104 mil CASE 403-03 Rectifiers — Schottky Device MBRS340T3 MBRS360T3 VRRM Volts •o Amps Ifsm Amps V F @ 25°C Volts lR @ 25°C mA 40 60 3 3 80 80 0.525 0.74 2 2 If s m Amps Amps VF @ 25°C Volts lR @ 25°C Volts 200

Contextual Info: SANGDEST MICROELECTRONICS 403CMQ SERIES Technical Data Data Sheet N0990, Rev. E 403CMQ SERIES SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding

Contextual Info: SANGDEST MICROELECTRONICS 403DMQ SERIES Technical Data Data Sheet N1676 Rev. - 403DMQ080/100 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding

Contextual Info: SANGDEST MICROELECTRONICS 403CNQ… SERIES Technical Data Data Sheet N1226, Rev. D Green Products 403CNQ… SERIES SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding

SMC case 403

Abstract: MURS320T3 MURS320T3G MURS340T3 MURS340T3G MURS360T3 MURS360T3G case 403
Contextual Info: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and

5M MARKING CODE DIODE SMC

Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS340T3G

Abstract: MBRS340T3G marking MBRS320T3G 5M MARKING CODE DIODE SMC MBRS320T3 MBRS330T3 MBRS330T3G MBRS340T3 case 403 SMC 403-03
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking B32 diode SCHOTTKY

Abstract: marking B34 diode SCHOTTKY marking B33 diode SMC case 403 b34 DIODE schottky marking B32 DIODE B36 marking B3X MARKING B33 SMC diode code b3x
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay

MURS

Abstract: MURS320T3G MURS360T3 MURS320T3 MURS340T3 MURS340T3G MURS360T3G
Contextual Info: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and

Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MURS320T3

Abstract: MURS320T3G MURS360T3 SMC 403-03 MURS340T3 MURS340T3G MURS360T3G
Contextual Info: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and

MBRS360BT3G

Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
Contextual Info: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and

SMC case 403

Contextual Info: MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high

GR-S-010

Abstract: smc d-M9bW SMC D-A93 YG02 LZ 173 relay D-M9B ISO pneumatic standards symbols D-M9P CD-MU03 CQUB20-5
Contextual Info: Compact Cylinder Plate type  Size: 20, 25, 32, 40 Width: Reduced by up to 40% compared with SMC CQ2 series    Total length: Reduced by up to 15% Volume: Reduced by up to 18% Mass: Reduced by up to 36% (compared with SMC MU series with 30 stroke)

part marking b36 diode

Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

5M MARKING CODE DIODE SMC

Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS320T3 MBRS330T3 MBRS340T3

Abstract: marking B34 diode SCHOTTKY b34 DIODE schottky MBRS340T3G diode marking b34 3B8000 DIODE ON SEMICONDUCTOR B34 marking B3X MBRS340T3G marking MBRS320T3G
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

SURS8360T3G

Abstract: MURS320T3G MURS360T3G SURS8340T3G SURS8320T3G
Contextual Info: MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G Surface Mount Ultrafast Power Rectifiers http://onsemi.com This series employs the state−of−the−art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay