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    MBRS360BT3G Search Results

    MBRS360BT3G Datasheets (2)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBRS360BT3G
    		On Semiconductor 3 A, 60 V Schottky Rectifier Original PDF 131.41KB 6
    MBRS360BT3G
    		On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF 129.3KB 7
    SF Impression Pixel

    MBRS360BT3G Price and Stock

    onsemi

    onsemi MBRS360BT3G

    DIODE SCHOTTKY 60V 3A SMB
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    DigiKey () MBRS360BT3G Digi-Reel 10,000 1
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    MBRS360BT3G Tape & Reel 10,000 2,500
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    Mouser Electronics MBRS360BT3G 263,050
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    Onlinecomponents.com MBRS360BT3G 29,750
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    Quest Components MBRS360BT3G 5,593
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    onsemi MBRS360BT3G.

    SCHOTTKY RECTIFIER, 4A, 60V, 403A, FULL REEL; Repetitive Peak Reverse Voltage:60V; Average Forward Current:4A; Diode Configuration:Single; Diode Case Style:DO-214AA (SMB); No. of Pins:2Pins; Forward Voltage Max:740mV; Product Range:-RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS360BT3G. Tape & Reel 2,500
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    MBRS360BT3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3 PDF

    B36 schottky diode

    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D B36 schottky diode PDF

    Diode marking CODE 5M smb

    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D Diode marking CODE 5M smb PDF

    MBRS360BT3G

    Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
    Contextual Info: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D MBRS360BT3G MBRS360T3G MBRS360T3 B36 schottky diode PDF

    5M MARKING CODE DIODE SMC

    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC PDF

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36 PDF

    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D PDF

    5M MARKING CODE DIODE SMC

    Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G 5M MARKING CODE DIODE SMC SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode PDF