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    MBRS360BT3G Search Results

    MBRS360BT3G Datasheets (2)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBRS360BT3G
    		On Semiconductor 3 A, 60 V Schottky Rectifier Original PDF 131.41KB 6
    MBRS360BT3G
    		On Semiconductor MBRS360 - DIODE 4 A, 60 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE 403A-03, SMB, 2 PIN, Rectifier Diode Original PDF 129.3KB 7
    SF Impression Pixel

    MBRS360BT3G Price and Stock

    onsemi

    onsemi MBRS360BT3G

    DIODE SCHOTTKY 60V 3A SMB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () MBRS360BT3G Cut Tape 7,049 1
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    MBRS360BT3G Tape & Reel 6,949 2,500
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    MBRS360BT3G Digi-Reel 6,949 1
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    Avnet Americas () MBRS360BT3G Tape & Reel 117,500 15 Weeks 2,500
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    MBRS360BT3G Ammo Pack 1
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    Mouser Electronics () MBRS360BT3G 238,192
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    Newark () MBRS360BT3G Cut Tape 154,985 1
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    MBRS360BT3G Tape & Reel 154,985 10
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    Future Electronics () MBRS360BT3G Reel 77,500 15 Weeks 2,500
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    MBRS360BT3G Reel 7,500 15 Weeks 2,500
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    MBRS360BT3G 4,177 1
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    Quest Components () MBRS360BT3G 5,593
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    MBRS360BT3G 3,341
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    MBRS360BT3G 3,341
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    Rochester Electronics MBRS360BT3G 5,000 1
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    Maritex MBRS360BT3G 3,304 1
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    onsemi MBRS360BT3G.

    SCHOTTKY RECTIFIER, 4A, 60V, 403A, FULL REEL; Repetitive Peak Reverse Voltage:60V; Average Forward Current:4A; Diode Configuration:Single; Diode Case Style:DO-214AA (SMB); No. of Pins:2Pins; Forward Voltage Max:740mV; Product Range:-RoHS Compliant: Yes
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRS360BT3G. Tape & Reel 2,500
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    MBRS360BT3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBRS360T3G

    Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3 PDF

    B36 schottky diode

    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device Ăemploys the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D B36 schottky diode PDF

    Diode marking CODE 5M smb

    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D Diode marking CODE 5M smb PDF

    MBRS360BT3G

    Abstract: MBRS360T3G MBRS360T3 B36 schottky diode
    Contextual Info: MBRS360T3, MBRS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D MBRS360BT3G MBRS360T3G MBRS360T3 B36 schottky diode PDF

    5M MARKING CODE DIODE SMC

    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC PDF

    part marking b36 diode

    Abstract: MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36
    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G MBRS360T3/D part marking b36 diode MBRS360BT3G MBRS360T3 MBRS360T3G SMC Package DIODE B36 PDF

    Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D PDF

    5M MARKING CODE DIODE SMC

    Abstract: SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode
    Contextual Info: MBRS360T3, MBRS360BT3G Preferred Devices Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRS360T3, MBRS360BT3G 5M MARKING CODE DIODE SMC SMC case 403 SMC 403-03 MBRS360BT3G Diode marking CODE 5M smb MBRS360T3 MBRS360T3G case 403 SMC MARKING part marking b36 diode PDF