SMA4 Search Results

SMA427A

Abstract: SMA427ATR SOT343 lna
Contextual Info: SMA427A 50 Ω / 50 Ω Low Noise Amplifier PRELIMINARY DATA • CASCADABLE 50 ohm-GAIN BLOCK • UNCONDITIONALLY STABLE • GAIN |S21|2 = 17 dB at 1.8 GHz • IP3out = +7.4 dBm at 1.575 GHz VD = 3 V, ID = 9.5 mA • NOISE FIGURE NF = 2.2 dB at 1.8 GHz • TYPICAL DEVICE VOLTAGE VD = 2 V to 5 V

A4011

Abstract: CA4011 SMA4011
Contextual Info: A4011/SMA4011 1000 TO 4000 MHz TO-8 CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 2.0 dB TYP. · MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) · HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc · PHEMT AMPLIFIER Typical Performance @ 25°C Specifications (Rev. Date: 2/02)*

Contextual Info: WJ-A41-1 /SMA41-1 • 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ■ » ■ ■ il l AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH OUTPUT LEVEL: +19.0 dBm TYP. LOW NOISE: 3.5 dB (TYP.) Outline Drawings A41-1 Specifications'* Characteristics 0.200

3.3 volt zener diode

Abstract: SMA4764 SMA4747 SMA4735 ZENER 6.2V SMA sma4740 SMA4757 SMA475
Contextual Info: SMA4735 THRU SMA4764 VOLTAGE 6 . 2 V ~ 100V Elektronische Bauelemente 1.0 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA ●FEATURES . For surface mounted applications . 1.0 W power dissipation . Low reverse current

Contextual Info: SMA428A High Gain, Low Noise Amplifier PRELIMINARY DATA • HIGH GAIN Gp = 21 dB at 1.85 GHz • LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz • LOW CURRENT CONSUMPTION 5.9 mA • OPEN COLLECTOR OUTPUT • TYPICAL SUPPLY VOLTAGE: 2.4-3 V • GAIN-STEP-MODE 36dB

marking S2W

Abstract: MCP6 Marking sanyo
Contextual Info: Ordering number : ENN0000 SMA4203 Si Monolithic Linear IC SMA4203 Oscillator IC for Laser Diode Noise Suppression Applications Preliminary Package Dimensions unit : mm 0000 0.25 5 0.15 4 0 to 0.1 1.25 2.1 6 0.2 0.425 [SMA4203] 0.2 0.425 3 0.9 1 2 0.65 2.0

SMA4036

Contextual Info: SMA4036 Absolute maximum ratings NPN Darlington With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR 120 100 6 2 4 PW≤1ms, Du≤50% 0.2 2 (PW≤0.5ms, Du≤25%) 4 (PW≤10ms, Single pulse) 120 4 (Ta=25°C) 20 (Tc=25°C)

TRANSISTOR a43

Contextual Info: Cascadable Amplifier 100 to 3200 MHz A43/ SMA43 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 10-3200 MHz • EXCELLENT GAIN BLOCK: 11.5 dB TYP. • MEDIUM OUTPUT POWER: +8.5 dBm (TYP.) Description The A43 RF amplifier is a discrete hybrid design, which uses

4730A diode

Abstract: 4737a+zener
Contextual Info: SMA4728A~SMA4764A Zener diode Features 1. For surface mounted applications 2. Low zener impedance 3. Low regulation factor 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

SMA4933

Abstract: SMA4934 SMA4935 SMA4936 SMA4937
Contextual Info: 1.0A Surface Mount Fast Recovery Rectifier SMA4933 – SMA4937 1.0A Surface Mount Fast Recovery Rectifier Features • • • • Low profile surface mounted package Fast recovery time for high efficiency Glass passivated junction Plastic package has underwriters laboratory

SMA4021

Contextual Info: SMA4021 Absolute maximum ratings PNP Darlington With built-in flywheel diode Ratings Unit Symbol VCBO VCEO VEBO IC ICP IB IF IFSM VR –60 –60 –6 –3 –6 PW≤1ms, Du≤50% –0.5 –6 (PW≤0.5ms, Du≤25%) –8 (PW≤10ms, Single pulse) 100 4 (Ta=25°C)

Contextual Info: SMA4F High junction temperature Transil Features • ■ ECOPACK2 halogen-free component Peak pulse power: – 400 W 10/1000 µs – 3 kW (8/20 µs) ■ Stand off voltage: 5 V ■ Unidirectional type ■ Low clamping voltage versus standard series ■

GRM39

Abstract: 142-0701-881 SMA427A SMA 142-0701-881
Contextual Info: AN1609 APPLICATION NOTE 1.0-2.0 GHz LOW NOISE AMPLIFIER USING THE Si MMIC SMA427A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1.575 GHz Vcc = 3V Vcc = 5V Unit 9.6 19.6 mA 2 2 dB Gain 18.2 21.1 dB RLin > 15 > 15 dB RLout

bc 149 transistor

Abstract: atic 144 WJ-CA45-1
Contextual Info: u j J A45-1 / SMA45-1 1 to 4 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN llllillil Outline Drawings A 4 5 -1 0.460 n (11.41) ü Specifications11

c10pf

Abstract: IT10011 SMA4206 max2934
Contextual Info: SMA4206 Ordering number : ENN8410 SMA4206 Si Monolithic Linear IC High Frequency Oscillator IC for Laser Diode Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Supply Voltage VCC 6.0 V Circuit Current 50 mA Allowable Power Dissipation

SMA4031

Contextual Info: SANKEN ELECTRIC CO LTD 55E 7*n07m DOOllflO flflE » S A K J SMA4031 Silicon NPN Triple Diffused Planar Darlington •M axim um Ratings Ta=25 'C aaa % tí T i s í l r t i i f l iü . î C o lle c to r-to -B a s e V o lta g e VCBO 120 V C o lle c to r-to -E m itte r V o lta g e

sma4121

Contextual Info: SANKEN ELECTRIC CO LTD SEE D 7^0741 OOOllflL, S T O « S A K J SMA4121 Silicon NPN Triple Diffused Planar ¡Maximum Ratings Ta = 25°C s„nw Item i é ì i t l i ì VCBO 80 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage V ebo 6 V Collector Current

IrL 1540 N

Abstract: IrL 1520 N IrL 1540 g irl 1520 AN-1784 U 1560 SMA428A AN1784
Contextual Info: AN1784 APPLICATION NOTE AN LNA OPTIMIZED AT 1575 MHz USING THE Si MMIC SMA428A N. Micalizzi, F. Caramagno, G. Privitera Table 1: Data for GPS Application f = 1575 MHz Parameters Value Unit Vcc 2.7 V Icc 5.9 mA 1.45 dB Gain 18 dB RLin 6.7 dB Noise Figure

STA455C

Abstract: STA405A SMA6012 SLA6022 SLA*6022 SMA4031 sla1008 sta421a SLA4031 SLA6030
Contextual Info: ANKEN DISCRETES TRANSISTOR ARRAYS Type No. VcEO lc lcp lif¡ Equivalent (V) (A) min Diagram Circuit VCEO IcOc3) N (V) (A) min Type No. STA301A 60+10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000 2 SMA4021 -60 -3(-6) 2000 31 STA303A 100 4(8)

Contextual Info: SMA47 SERIES 稳压（齐纳）二极管 Zener Diodes •特征 Features ■外形尺寸和印记 ●Ptot 1.0W ●Vz 3.3V-100V Outline Dimensions and Mark DO-214AC SMA .062(1.58) .049(1.25) .111(2.83) .094(2.40) Mounting Pad Layout 0.065 (1.66) .187(4.75)

Contextual Info: SMA4735 THRU SMA4764 VOLTAGE 6 . 2 V ~ 100V Elektronische Bauelemente 1.0 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA FEATURES . For surface mounted applications . 1.0 W power dissipation . Low reverse current

Contextual Info: SANKEN ELECTRIC CO LTD SSE D T^OTHl ODD117b 351 » S A K J SMA4021 Silicon PNP Epitaxial Planar ¡Maximum Ratings Item Collector-to-B ase Voltage Ta = 25*C Sym bol S t Ä VCBO -6 0 C ollector-to-E m itter Voltage VCEO -6 0 V Em itter-to-B ase Voltage V ebo

TRANSISTOR a45

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A45/ SMA45 V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses

Contextual Info: A43/SMA43 100 TO 3200 MHz CASCADABLE AMPLIFIER • ULTRAWIDE BANDWIDTH: 100-3200 MHz · EXCELLENT GAIN BLOCK: 11.5 dB TYP. · MEDIUM OUTPUT LEVEL: +8.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/01)* Characteristics Typical Frequency