SM-8 PACKAGE Search Results

SM-8 BIPOLAR TRANSISTOR

Abstract: 4420 Transistor TP4030 ZHB6792 500mA H-bridge
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 70V supply * 1 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6792

Contextual Info: Ordering number : EN%5086A CMOS LSI LC371000SP, SM-10/LC371000SP, SM-20LV SMSYO 1 MEG 131072 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371000SP, SM-10 and LC371000SP, SM-20LV are 1048576-bit M ask Program m able R ead Only

h6718

Abstract: bf 494 transistor ZHB6718 ZHB6718 TYPICAL APPLICATION 12 mje t 5029 DSA003727 SM-8 BIPOLAR TRANSISTOR
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 20V supply * 2.5 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6718

ZHB6790

Abstract: diagram of bf 494 transistor transistor bf 494 "dual TRANSISTORs" pnp npn transistor Ic 1A datasheet NPN TP4030 DSA003728 SM-8 BIPOLAR TRANSISTOR npn-pnp dual
Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6790 PRELIMINARY DATA SHEET ISSUE B JULY 1997 FEATURES * Compact package * Low on state losses * Low drive requirements * Operates up to 40V supply * 2 Amp continuous rating SM-8 8 LEAD SOT223 PARTMARKING DETAIL – ZHB6790

LC371000SP

Abstract: lc371000 CCA1 A2 SM20L
Contextual Info: Ordering number: EN3K5086A CMOS LSI LC371000SP, SM-10/LC371000SP, SM-20LV S A \Y O 1 MEG 131072 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371000SP, SM-10 and LC371000SP, SM-20LV are 1048576-bit M ask Program m able Read Only

Contextual Info: Ordering number : EN-% 50B7A | CMOS LSI LC371100SP, SM-10/LC37110OSP, SM-20LaT I s /m ro 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-bit M ask Program m able Read O nly

SOP32 20 pin Package

Abstract: SOP32
Contextual Info: Ordering number : EN% 5087A CMOS LSI No. 5K 5087A S A \Y O LC371100SP, SM-10/LC371100SP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-bit M ask Program m able Read Only

DIP32

Abstract: LC371100SP SM-10 SANYO DL
Contextual Info: I Ordering number : ENÎ8 50B7A CMOS LSI No. 5K 5087A SAMYO LC371100SP, SM-10/LC37110OSP, SM-20LV 1 MEG 131072 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC371100SP, SM-10 and LC371100SP, SM-20LV are 1048576-b it M ask Program m able Read Only

2SK1068

Abstract: 2SK545
Contextual Info: Ordering number : EN2 7 4 8 2SK1068 N -Channel Junction Silicon FET Impedance Conversion Applications A pplications •Impedance conversion • Infrared sensor F eatures • Sm all lo ss • Sm all crss • Very sm all-sized package perm itting 2SK1068-applied sets to be m ade sm aller and slim m er

NEL Frequency Controls

Contextual Info: 9225A Rev. J NEL CRYSTAL CLOCK OSCILLATORS SPECIFICATION HS/SM/HA/SA Packages -1520 TTL Pin Connection HS/SM Connection 1 Enable/disable input Grd & case Output VCC 7 8 14 HA/SA Connection 1 Enable/disable input Grd & case Output VCC 4 5 8 Description Suggested Applications

SM-8 Package

Abstract: e4 sot223 NPN/PNP transistor sot223 ZHB6718 ZHB6718 TYPICAL APPLICATION ZHB6790 ZHB6792
Contextual Info: H-Bridge devices in SM-8 Package 4 3 6 B2 2 B4 B1 E2,E3 1 C3,C4 7 E1,E4 8 C1,C2 5 The SM-8, is an 8 lead version of the industry standard SOT223 package. The package and leads occupy an area of 6.7 x 7.3mm and with a maximum height of 1.7mm it is ideal for space critical applications.

SV153A

Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Contextual Info: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670

Contextual Info: SMJ44C256 262,144 WORD BY 4 BIT DYNAMIC RANDOM-ACCESS MEMORY M A Y 1 9 8 9 - R E V IS E D F E B R U A R Y 1 9 9 0 262,144 x 4 Organization JD PACKAGEt TOP VIEW Single 5-V Supply (10% Tolerance) SM J44C256-10 SM J44C256-12 SM J44C256-1 5 LJ20 ] V R S D Q 1[

9420a

Abstract: HS Series
Contextual Info: 9420A Rev. C NEL CRYSTAL CLOCK OSCILLATORS SPECIFICATION HS/SM/HA/SA-370 CMOS Compatible Pin Connection HS/SM 1 7 8 14 HA/SA 1 4 5 8 Connection N.C. Grd & case Output VDD Connection N.C. Grd & case Output VDD Description Features The -370 Series of quartz crystal

A1420

Abstract: NEL Frequency Controls
Contextual Info: Y JL 9617F Rev. D NEL CRYSTAL CLOCK OSCILLATORS SPECIFICATION HS/SM/HA/SA-A1420 CMOS Pin Connection HS/SM Connection 1 Enable/disable input Grd & case Output VDD 7 8 14 HA/SA Connection 1 Enable/disable input Grd & case Output VDD 4 5 8 HS- Outline drawing shown

Contextual Info: TO SHIBA 1SS361 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS361 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm 1 .6 Í0 .2 • Sm all Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Sm all Total Capacitance , 0 . 8 ± 0.1

Contextual Info: O K I semiconductor MSM65524/65P524 OKI ORIGINAL HIGH PERFORMANCE CMOS 8 BIT SINGLE CHIP MICROCONTROLLER GENERAL DESCRIPTION M SM 65524 is a high-performance 8-bit single-chip controller that employs O ki's original nX-8/50 CPU core. W ith a m inimum instruction execution time of 400 ns 10M H z dock , the M SM 6 55 2 4 is

TO8 package

Abstract: SM19 TO -8 package
Contextual Info: Amplifier Outline Drawings TO-8 Package T4 TO-8B Package (T8) TO-12 Package (T7) TO-39 Package (T10) .500” Fiatpack (FP4) .625”Gullwing (SG4) - 460- Amplifier Outline Drawings .450” Sq. Surface Mount (SM-3) .375” Sq. Surface Mount (SM-11) .188 j— a ( .050 db.015

MSM518128

Abstract: MSM518128L
Contextual Info: O K I Semiconductor MSM5 18128/L_ 131,072-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The M SM 518128/L achieves high integration, high-speed operation, and low-power

h6718

Contextual Info: SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6718 PRELIMINARY DATA SHEET ISSUE B - JU LY 1997 FEATURES * C o m p a ct package * L o w on state losses * L o w d riv e re q u ire m e n ts * O perates up to 20V s u p p ly * 2.5 A m p c o n tin u o u s ratin g / ; / SM-8

MSM531601D

Abstract: C18-19 HA20
Contextual Info: O K I Semiconductor MSM531601D 2,097,152-Word x 8-Bit Mask ROM DESCRIPTION The OKI M SM 531601D is a high-speed silicon gate CM OS Mask ROM with 2,097,152-word x 8-bit capac­ ity. The M SM 531601D operates on a single 5.0 V power supply and is TTL compatible. The chip's asyn­

3tr5

Abstract: active suspension MSM56V16800D MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15 wf vqc 10 d a6 56V16800
Contextual Info: O K I Semiconductor M SM 56V16800D/DH E2G1047-17-94 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N The M SM 56V16800D/DH is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

Contextual Info: EHAlpha Hyperabrupt Tuning Varactors SM V1232-SM V1237 Features • High Capacitance Ratio, C i v /Q 3 v = 1 -8, C 1 \j / C q v = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 w * ■ Designed for High Volume Commercial

20-PIN

Abstract: 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.