SM 6136 B Search Results

cir 2272

Abstract: sm 6136 b 2272C sm 6136
Contextual Info: SFH6135 SFH6136 Infineon technologies High-Speed 5.3 kV TRIOS Optocoupler FEATURES • Isolation Test Voltage: 5300 VRMS • TTL Compatible • High Bit Rates: 1.0 Mbit/s • High CoMmon-mode Interference Immunity • Bandwidth 2.0 MHz • Open-collector Output

sm 6136 b

Abstract: CD6283A D6283 9452 TVS 1N6156A
Contextual Info: Transient Voltage Suppressors P art N um ber M icrosem i D ivision P ackage O utline Type M il i Data S pec ¡ S h e e t ID Ppp W Micmsemi Pulse j Vwm T y p e ; (V) Ipp (A) VB R (V) Vc (V) ID Toi. (uA ) .<+/•%). C D6283A Scottsdale CELLULAR DIE 6168 1500

sm 6136 b

Contextual Info: Transient Voltage Suppressors Microsemi :• Part Number -■ • Microsemi Division Scottsdale MPT-12 Scottsdale MPT-12C Scottsdale MPTE-12 Scottsdale MPTE-12C Scottsdale 1N6043A Scottsdale JAN1N6043A Scottsdale JANTX1N6043A Scottsdale JANTXV1N6043A Scottsdale

VQ7254P

Abstract: VQ7254 VQ7254J
Contextual Info: S iliconix H T-43> -IS VQ7254 SERIES inco rp orated N - an d P -C hannel E n h a n c e m e n t-M o d e M O S T ran sisto r Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY T O P V IE W Dual-ln-Llne Package PART NUM BER V BR DSS (V ) rD S (O N ) Q l + Q2 or Q3 + Q4

SMW20P10

Abstract: sm 6136 b NS8060 4560D
Contextual Info: Temic SMW20P10 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -1 0 0 0.20 -2 0 TO-247AD G D S l o p View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Sym bol L im it

DMP14

Abstract: NJM2129 NJM2129D NJM2129M NJU2129I
Contextual Info: w m $LQ m Ç£ L " 9 o - «01 : NI i • *-MS ! H : N i • • VMS ‘SM S 'SM S ' QND in O - O H U «SpdJO/NO-D3U H m d w a 'm d i a 0 r» □ .C

TEA1080P

Abstract: TEA1080PN LZ 97A TEA1080 OP117D
Contextual Info: TEA1080 S ignetics Supply IC for Telephone Set Peripherals Product Specification Linear Products DESCRIPTION FEATURES T h e T E A 1 0 8 0 is f^ b ip o la r jp t e g r a te d circu it in te n d e d fo r use in lin e -po w e red te le p h o n e s e ts to su p p ly p erip h era l c ir­

sm 6136 b

Abstract: 1FW 07 1FW 87 54LS123 1FW ST SM 6136 1FW 75 1FW 74 1FW 55
Contextual Info: M MOTOROLA Military 54LS123 D u a l R e trigge rab le M o n o sta b le M u ltiv ib ra to r (w ith Clear) ELECTRICALLY TESTED PER: MIL-M-38510/31401 AVAILABLE A S: T h is d-c triggered m ultivibrator features pulse width control b y three m ethods. T he basic pulse width is p ro g ra m m e d by selection o f external

7201L30

Abstract: NJII7201 7201l15
Contextual Info: NJII7201 Series C MOS 3 - TERMINAL NEBATIVE VOLTAGE REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE T he N JU 7201 series is a C -M O S 3-term inal positive voltage regu­ lator w hich contains internal accurate voltage reference, e rro r am p li­ fier, control transistor and output voltage setting resistor.

Contextual Info: y k i y j x i y k i Program mable Negative Voltage Regulator _Features ♦ 1% Output Voltage Accuracy ICL7664A ♦ -2V to -16V Operating Range ♦ 25mA Output Current, with Current Limiting ♦ Adjustable Output Voltage ♦ Low Input-to-Output Voltage Drop

sm 6136 b

Contextual Info: Thpl LETT mL'EMHEW PACK ARD High Speed Optocouplers Technical Data CNW135 CNW136 CNW4502 peli/ CNW4503 F eatures • 5000 Vrms/1 Minute Insula­ tion Withstand Capability • Worldwide Safety Approval Applications • High Voltage Insulation • Video Signal Isolation

Contextual Info: & 93LCS56 M icro ch ip 2K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION • Single supply with programming operation down to 2.5 V • Low power CMOS technology — 1 mA active current typical — 5 nA standby current typical at 3.0 V • Organized as 128 x 16 bits

Contextual Info: HM-6504/883 HARRIS S E M I C O N D U C T O R 4096 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6504/883 is a 4096 x 1 static CMOS RAM

Contextual Info: HM-6504/883 Semiconductor 4096 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6504/883 is a 4096 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. The

hp cnw4503

Abstract: CNW135 CNW136 CNW4502 CNW4503 E55361 G5003
Contextual Info: Thal mL'HM HEWLETT PA C K A R D H ig h S p e e d O p to c o u p le rs Technical Data CNW135 CNW136 CNW4502 CNW4503 F eatu res • 5000 Vrms/1 M inute Insula­ tion W ithstand C apability • W orldwide Safety Approval UL1577 File No. E55361 VDE 0884 Certification

Contextual Info: SSI 32H6827/6828 Servo and Spindle Predriver W M M k f f lS ' A TDK Group/Company January 1995 DESCRIPTION FEATURES The SSI 32H 6827 Servo and Spindle Predriver, a B ip o la r m on o lith ic in te g ra te d c ircu it housed in a 64-Lead TQ FP package, operates from +5V and +12V

2N39Q4

Abstract: hp cnw4503 CNW135 CNW136 CNW4502 CNW4503 E55361 Optocoupler 601
Contextual Info: WTZm H E W L E T T wHEA P A C K A R D H ig h S p e e d O p to c o u p le rs Technical Data CNW135 CNW136 CNW4502 CNW4503 Features • 5000 Vrms/1 Minute Insula­ tion Withstand Capability • Worldwide Safety Approval UL1577 File No. E55361 VDE 0884 Certification

MSM048

Abstract: MSD100 602 Media Specification
Contextual Info: MSM048/MSM096 and MSD048/MSD096 Microsemi Corporation MSM048 and MSM096 MSD048 and MSD096 Shortened data sheet version Secure SLC NAND SATA BGA with Hardware Authentication and Self Destruct NOTE: Microsemi does not publish the full data sheet for this product on the web.

sm 6136 b

Abstract: 3052v 15v
Contextual Info: MN5295 MN5296 17 /iSec, 16-Bit EXTENDED TEMPERATURE A/D CONVERTERS [U wmm MICRO NETWORKS DESCRIPTION FEATURES High re solution, high speed, sm all package and the a b ility to operate over extended tem p e ra tu re s including -5 5 ° C to + 125°C are brought to g e th e r in the MN5295 and MN5296.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MSD100

Contextual Info: MSM048/MSM096 and MSD048/MSD096 Microsemi Corporation MSM048 and MSM096 MSD048 and MSD096 Shortened data sheet version Secure SLC NAND SATA BGA with Hardware Authentication and Self Destruct NOTE: Microsemi does not publish the full data sheet for this product on the web.

pml 003 am

Abstract: ic pml 003 am N02 Transistor rf INA-12063
Contextual Info: w a g HEW LETT1 "EM PA CK ARD I 1.5 GHz Low Noise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • In te g ra te d , A ctiv e B ias C irc u it Surface Mount Package SOT-363 SC-70 • S ingle P o sitiv e S upply V oltage (1 .5 - 5V)

ande RY 227

Abstract: ande RY 228 27AD Y/BIT 3713 tba 8227 SK 6211 179d 17C4 adcb 27 M68HC11
Contextual Info: M68HC16 Family CPU16 Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and

ande RY 227

Abstract: ande RY 228 ande RY 192 37AF BF 179C BIT 3713 ic tba 220 datasheet M68HC11 M68HC16 CPU16 freescale
Contextual Info: Freescale Semiconductor, Inc. M68HC16 Family CPU16 Freescale Semiconductor, Inc. Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability