SL302 Search Results

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

PNP transistor A705

Abstract: 2N1620 2sc768 2N1619 UD3008 BD264 BD265A MHT6414 SOT1156 MHT6311
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

BC507

Abstract: l18b 5.1 channel producing ic BC180 bc507 transistor TIS107 ME60 PET1075 PET1075A PET6003
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BF125

Abstract: PET8002 l18b GW 9n BFW74 BFW75 BFW76 BFX53 T046 ML101A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Y220b

Abstract: 2N3836 BD264 BD263 BD264A NS9726 BD265 UD3008 2N3837 2N5417
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LINE No. TYPE No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

tea 1601 t

Abstract: l18b PT23 tea 1601 UD3008 2N2719 ME2001
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BD264

Abstract: TIP27 BD109 S1050 BD263 BD264A BLY88 BLY92 S708 transistor BD400
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C

028A5

Abstract: BD264 MT27 package 2SC5220 2SC5240 B3539 BLY95 MSP90 TA2084
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

80 amp 30v npn darlington

Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

IC SI-8050S 5V 3A

Abstract: sk 8050s sk a 3120c STR2012 sk 3240c sk a 3240c sk a 3050c SI-3522V SI-3132V 3522V
Contextual Info: CAUCAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in

221 1KV

Abstract: K405 capacitor ceramic 221 3kv capacitor 5pf 6KV pf101 capacitor 221 1kv
Contextual Info: CERAMIC DISC CAPACITOR Class I 50V,100V,500V,1KV,2KV,3KV,6KV, Temperature Compensation Type www.passivecomponent.com Features: • Capacitance has linear temperature coefficient ■ Capacitance high stability ■ Epoxy Coating for 2KV, 3KV,6KV parts equivalent to UL94V-0 standards

3020 transistor

Contextual Info: Preliminary Product Description SL-3020 The SL-3020 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Contextual Info: Temperature/mV Recorders OMEGALINE 630 and 640 Series A complete series of precision instruments designed by F.A. Porsche for OMEGA ENGINEERING, INC. ߜ ߜ ߜ ߜ ߜ ߜ OMEGA SM CARE Extended Warranty Program Model 630 and 640 High Performance Recorder 1775

SMDI

Abstract: Transistor Equivalent list SL-25221 SL-30101 SL-30102 SL-30201 SL-30202 SL-60101 SL-60102 SL-60201
Contextual Info: 522 Almanor Ave. Sunnyvale, CA 94085 Product Obsolescence Notice Notification Date: 10/27/2000 Obsolescence of See List Below Please be advised that Stanford Microdevices will be obsolescing the following product or products on the effective date noted for the products listed.

capacitor 5pf 6KV

Abstract: capacitor 15 6kV capacitor 221 1kv sl202 capacitor 390 2kv capacitor 270 1kv capacitor 33 2kv SL302 SL 6kV 561 1KV CERAMIC CAPACITOR
Contextual Info: CERAMIC DISC CAPACITOR Class I 50V,100V,500V,1KV,2KV,3KV,6KV, Temperature Compensation Type w w w. p a s s i v e c o m p o n e n t . c o m FEATURES : • Capacitance has linear temperature coefficient ■ Capacitance high stability ■ Epoxy Coating for 2KV, 3KV,6KV parts equivalent to UL94V-0 standards .

2SC736

Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

ML101A

Abstract: BD265A SP8412
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SC631

Abstract: 2SC632 FV918 2N1082 transistor 2sC632 BCY50 2N7481 a608 2SC402A ML102B
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

BD264A

Abstract: 2N3836 2N5417 BD263 BSX86 ML101B SC1625
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

transistor j380

Abstract: MOS 3020 3020 transistor j380 SL-30201 SL-30202
Contextual Info: Advance Data Sheet Product Description SL-3020 The SL-3020 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

ST1536

Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005

MOS 3020

Abstract: 3020 transistor sl 100 transistor
Contextual Info: Advance Data Sheet Product Description SL-3020 The SL-3020 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 2000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power

Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T