SIS43 Search Results

Contextual Info: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

sis430dn

Contextual Info: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

SiS432DN-T1-GE3

Contextual Info: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

69053

Abstract: AN609 43526
Contextual Info: SiS430DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

AN609

Contextual Info: SiS432DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

74537

Abstract: 4532 MOSFET AN609
Contextual Info: SiS436DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: SPICE Device Model SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

Contextual Info: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model SiS434DN www.vishay.com Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the

Contextual Info: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SPICE Device Model SiS438DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIS43

Abstract: SIS43-100 SIS43-150 SIS43-1R0 SIS43-1R5 SIS43-220 SIS43-2R2 SIS43-330 SIS43-3R3 SIS43-4R7
Contextual Info: SMT Power Inductor SIS43 Type Features • ■ ■ ■ ■ ■ Small size 6.6mm*4.45mm , low profile (2.9mm max. height) SM D type. Unshielded, suitable for high density mounting. High energy storage and low DCR. Provided with embossed carrier tape packing.

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SPICE Device Model SiS438DN www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiS436DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0105 at VGS = 10 V 16 0.013 at VGS = 4.5 V 16 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

S-8265

Contextual Info: SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0051 at VGS = 10 V 35 0.0069 at VGS = 4.5 V 35 VDS (V) 25 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)

Contextual Info: New Product SiS438DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 16 0.0125 at VGS = 4.5 V 16 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: SiS432DN Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 35 0.0061 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)