SIRA18DP Search Results
SIRA18DP Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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| SIRA18DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 33A SO-8 | Original | 9 |
SIRA18DP Price and Stock
Vishay Siliconix SIRA18DP-T1-GE3MOSFET N-CH 30V 33A PPAK SO-8 |
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SIRA18DP-T1-GE3 | Cut Tape | 1,590 | 1 |
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Vishay Siliconix SIRA18DP-T1-RE3MOSFET N-CH 30V 33A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA18DP-T1-RE3 | Reel | 3,000 |
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Vishay Intertechnologies SIRA18DP-T1-GE3Power MOSFET, N Channel, 30 V, 33 A, 0.006 ohm, PowerPAK SO, Surface Mount - Tape and Reel (Alt: SIRA18DP-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA18DP-T1-GE3 | Reel | 3,000 | 18 Weeks | 3,000 |
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SIRA18DP-T1-GE3 | 7,566 |
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SIRA18DP-T1-GE3 | 700 | 676 |
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SIRA18DP-T1-GE3 | Bulk | 700 | 1 |
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SIRA18DP-T1-GE3 | 30 |
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SIRA18DP-T1-GE3 | Reel | 9,000 | 3,000 |
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SIRA18DP-T1-GE3 | 1 |
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SIRA18DP-T1-GE3 | 3,000 | 18 Weeks | 3,000 |
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SIRA18DP-T1-GE3 | 19 Weeks | 3,000 |
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SIRA18DP-T1-GE3 | 9,000 | 1 |
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Vishay Intertechnologies SIRA18DP-T1-RE3N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA18DP-T1-RE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA18DP-T1-RE3 | Reel | 18 Weeks | 3,000 |
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SIRA18DP-T1-RE3 |
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SIRA18DP-T1-RE3 | Reel | 3,000 |
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SIRA18DP-T1-RE3 | 19 Weeks | 3,000 |
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Vishay Intertechnologies SIRA18DP-T1-GE3. (TRENCHFET GEN IV SERIES)Mosfet, N-Ch, 30V, 33A, Powerpak So; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:33A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SIRA18DP-T1-GE3. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIRA18DP-T1-GE3. (TRENCHFET GEN IV SERIES) | Reel | 3,000 | 3,000 |
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SIRA18DP Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm |
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SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiRA18DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization: |
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SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm |
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SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization: |
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SiRA18DP SiRA18DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiRA18DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiRA18DP AN609, 4850m 2606u 7531m 2846m 9328u 0622m 3482u 01-Aug-12 | |
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Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications: |
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SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402 | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |