SIRA18DP Search Results

Contextual Info: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm

Contextual Info: SPICE Device Model SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:

Contextual Info: New Product SiRA18DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.0075 at VGS = 10 V 33 0.0120 at VGS = 4.5 V 20.3 Qg (Typ.) 6.9 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • • • • 5.15 mm

Contextual Info: SiRA18DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a 33 20.3 RDS(on) () MAX. 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 30 Qg (TYP.) 6.9 nC D 5 D 6 • 100 % Rg and UIS tested • Material categorization:

Contextual Info: SiRA18DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in