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    SIR80 Search Results

    SIR80 Datasheets (6)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIR800ADP-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V PPAK SO-8 Original PDF 182.16KB
    SIR800ADP-T1-RE3
    		Vishay Siliconix MOSFET N-CH 20V 50.2A/177A PPAK Original PDF 181.41KB
    SIR800DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 50A 8-SOIC Original PDF 7
    SIR802DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A 8-SOIC Original PDF 9
    SIR804DP-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC Original PDF 9
    SIR808DP-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 20A POWERPAK Original PDF 311.57KB
    SF Impression Pixel

    SIR80 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIR800ADP-T1-RE3

    MOSFET N-CH 20V 50.2A/177A PPAK
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    DigiKey () SIR800ADP-T1-RE3 Digi-Reel 16,949 1
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    SIR800ADP-T1-RE3 Cut Tape 16,949 1
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    SIR800ADP-T1-RE3 Tape & Reel 15,000 3,000
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    Avnet Americas SIR800ADP-T1-RE3 Tape & Reel 16 Weeks 3,000
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    Mouser Electronics SIR800ADP-T1-RE3 7,641
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    Newark SIR800ADP-T1-RE3 Cut Tape 1,830 1
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    TTI () SIR800ADP-T1-RE3 Reel 6,000 3,000
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    SIR800ADP-T1-RE3 Reel 6,000 3,000
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    Vishay Intertechnologies SIR800ADP-T1-GE3

    MOSFET N-CH 20V 50.2A/177A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR800ADP-T1-GE3 Digi-Reel 8,266 1
    • 1 $2.63
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    SIR800ADP-T1-GE3 Cut Tape 8,266 1
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    SIR800ADP-T1-GE3 Tape & Reel 3,000 3,000
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    Avnet Americas SIR800ADP-T1-GE3 Tape & Reel 6,000 16 Weeks 3,000
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    Mouser Electronics SIR800ADP-T1-GE3 3,547
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    Newark SIR800ADP-T1-GE3 Bulk 8,111 1
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    TTI () SIR800ADP-T1-GE3 Reel 6,000
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    TME SIR800ADP-T1-GE3 3,000
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    EBV Elektronik SIR800ADP-T1-GE3 17 Weeks 3,000
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    Vishay Intertechnologies SIR800DP-T1-GE3

    MOSFET N-CH 20V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR800DP-T1-GE3 Cut Tape 5,235 1
    • 1 $2.52
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    SIR800DP-T1-GE3 Digi-Reel 5,235 1
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    • 10 $1.62
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    SIR800DP-T1-GE3 Tape & Reel 3,000
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    Avnet Americas SIR800DP-T1-GE3 Tape & Reel 46 Weeks 3,000
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    Mouser Electronics SIR800DP-T1-GE3 3,600
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    • 10 $1.52
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    Newark SIR800DP-T1-GE3 Bulk 1
    • 1 $2.14
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    TTI () SIR800DP-T1-GE3 Reel 9,000 3,000
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    EBV Elektronik SIR800DP-T1-GE3 47 Weeks 3,000
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    Vishay Intertechnologies SIR804DP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR804DP-T1-GE3 Digi-Reel 2,420 1
    • 1 $3.79
    • 10 $2.48
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    SIR804DP-T1-GE3 Cut Tape 2,420 1
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    Avnet Americas SIR804DP-T1-GE3 Tape & Reel 46 Weeks 3,000
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    Mouser Electronics SIR804DP-T1-GE3 8,169
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    Verical SIR804DP-T1-GE3 232 5
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    Arrow Electronics SIR804DP-T1-GE3 Cut Strips 232 46 Weeks 1
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    TTI () SIR804DP-T1-GE3 Reel 3,000
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    SIR804DP-T1-GE3 Reel 3,000
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    Bristol Electronics SIR804DP-T1-GE3 1,146
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    Avnet Asia SIR804DP-T1-GE3 48 Weeks 3,000
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    EBV Elektronik SIR804DP-T1-GE3 47 Weeks 3,000
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    Vishay Intertechnologies SIR802DP-T1-GE3

    MOSFET N-CH 20V 30A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR802DP-T1-GE3 Tape & Reel
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    Find more SIR80 price and stock on Findchips.com

    SIR80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR808DP AN609, 1555m 2783u 6809m 4813m 5804m 2240u 7492m 23-Mar-11 PDF

    Contextual Info: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		SiR804DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR800DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR802DP 2002/95/EC SiR802DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    67550

    Abstract: 0408 G Diode
    Contextual Info: SPICE Device Model SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR808DP 11-Mar-11 67550 0408 G Diode PDF

    Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR800DP 18-Jul-08 PDF

    SIR804DP

    Abstract: sir804dp-t1-ge3
    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 PDF

    8253

    Abstract: AN609
    Contextual Info: SiR802DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiR802DP AN609, 05-Feb-10 8253 AN609 PDF

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR802DP 2002/95/EC SiR802DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 PDF

    sir808

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		SiR808DP 2002/95/EC SiR808DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir808 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		SiR808DP 2002/95/EC SiR808DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR802DP 2002/95/EC SiR802DP-T1-GE3 18-Jul-08 PDF

    S10031

    Abstract: SiR802DP
    Contextual Info: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR802DP 18-Jul-08 S10031 PDF

    SiR800DP

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR800DP 2002/95/EC SiR800DP-T1-GE3 18-Jul-08 PDF

    SIR808DP-T1-GE3

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original     		SiR808DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIR808DP-T1-GE3 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR802DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF