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    SIR80 Search Results

    SIR80 Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIR800ADP-T1-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V PPAK SO-8 Original PDF 182.16KB
    SIR800ADP-T1-RE3
    Vishay Siliconix MOSFET N-CH 20V 50.2A/177A PPAK Original PDF 181.41KB
    SIR800DP-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 50A 8-SOIC Original PDF 7
    SIR802DP-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A 8-SOIC Original PDF 9
    SIR804DP-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC Original PDF 9
    SIR808DP-T1-GE3
    Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 20A POWERPAK Original PDF 311.57KB
    SF Impression Pixel

    SIR80 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIR800ADP-T1-GE3

    MOSFET N-CH 20V 50.2A/177A PPAK
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    DigiKey () SIR800ADP-T1-GE3 Cut Tape 8,266 1
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    SIR800ADP-T1-GE3 Digi-Reel 8,266 1
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    SIR800ADP-T1-GE3 Tape & Reel 3,000 3,000
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    Avnet Americas SIR800ADP-T1-GE3 Tape & Reel 21 Weeks 3,000
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    Mouser Electronics SIR800ADP-T1-GE3 4,547
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    Newark SIR800ADP-T1-GE3 Bulk 8,111 1
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    TTI SIR800ADP-T1-GE3 Reel 6,000
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    EBV Elektronik SIR800ADP-T1-GE3 22 Weeks 3,000
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    Maritex SIR800ADP-T1-GE3 4,293 1
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    Vishay Intertechnologies SIR804DP-T1-GE3

    MOSFET N-CH 100V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR804DP-T1-GE3 Digi-Reel 6,521 1
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    SIR804DP-T1-GE3 Cut Tape 6,521 1
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    SIR804DP-T1-GE3 Tape & Reel 6,000 3,000
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    Avnet Americas SIR804DP-T1-GE3 Tape & Reel 31 Weeks 3,000
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    Mouser Electronics SIR804DP-T1-GE3 13,361
    • 1 $2.12
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    Verical SIR804DP-T1-GE3 353 5
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    Arrow Electronics SIR804DP-T1-GE3 Cut Strips 353 31 Weeks 1
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    Newark () SIR804DP-T1-GE3 Cut Tape 3,000
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    SIR804DP-T1-GE3 Tape & Reel 3,000
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    Bristol Electronics SIR804DP-T1-GE3 1,146
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    TTI SIR804DP-T1-GE3 Reel 3,000
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    TME SIR804DP-T1-GE3 3,000
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    Avnet Asia SIR804DP-T1-GE3 33 Weeks 3,000
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    Chip Stock SIR804DP-T1-GE3 891
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    EBV Elektronik SIR804DP-T1-GE3 32 Weeks 3,000
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    IBS Electronics SIR804DP-T1-GE3 1
    • 1 $1.64
    • 10 $1.64
    • 100 $1.64
    • 1000 $1.64
    • 10000 $1.61
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    Vishay Intertechnologies SIR800DP-T1-GE3

    MOSFET N-CH 20V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR800DP-T1-GE3 Digi-Reel 5,555 1
    • 1 $2.36
    • 10 $1.51
    • 100 $1.03
    • 1000 $0.81
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    SIR800DP-T1-GE3 Cut Tape 5,555 1
    • 1 $2.36
    • 10 $1.51
    • 100 $1.03
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    SIR800DP-T1-GE3 Tape & Reel 2,990 3,000
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    Avnet Americas SIR800DP-T1-GE3 Tape & Reel 15 Weeks 3,000
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    Mouser Electronics SIR800DP-T1-GE3 4,832
    • 1 $2.36
    • 10 $1.52
    • 100 $1.04
    • 1000 $0.80
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    Verical SIR800DP-T1-GE3 2,979 49
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    Newark SIR800DP-T1-GE3 Tape & Reel 3,000
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    TTI SIR800DP-T1-GE3 Reel 9,000 3,000
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    TME SIR800DP-T1-GE3 3,000
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    Chip One Stop SIR800DP-T1-GE3 Cut Tape 2,979 0 Weeks, 1 Days 1
    • 1 $2.35
    • 10 $1.51
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    Chip Stock SIR800DP-T1-GE3 105,360
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    EBV Elektronik SIR800DP-T1-GE3 16 Weeks 3,000
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    IBS Electronics SIR800DP-T1-GE3 1
    • 1 $1.08
    • 10 $1.08
    • 100 $1.08
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    • 10000 $1.06
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    Vishay Intertechnologies SIR800ADP-T1-RE3

    MOSFET N-CH 20V 50.2A/177A PPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () SIR800ADP-T1-RE3 Digi-Reel 2,911 1
    • 1 $1.32
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    SIR800ADP-T1-RE3 Cut Tape 2,911 1
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    SIR800ADP-T1-RE3 Tape & Reel 3,000
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    Avnet Americas SIR800ADP-T1-RE3 Tape & Reel 21 Weeks 6,000
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    Mouser Electronics SIR800ADP-T1-RE3 1,674
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    Newark SIR800ADP-T1-RE3 Cut Tape 4,830 1
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    TTI SIR800ADP-T1-RE3 Reel 6,000
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    TME SIR800ADP-T1-RE3 3,000
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    EBV Elektronik SIR800ADP-T1-RE3 22 Weeks 3,000
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    Vishay Intertechnologies SIR808DP-T1-GE3

    MOSFET N-CH 25V 20A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR808DP-T1-GE3 Tape & Reel
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    Avnet Americas SIR808DP-T1-GE3 Tape & Reel 3,000
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    Bristol Electronics SIR808DP-T1-GE3 577
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    Quest Components SIR808DP-T1-GE3 461
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    SIR80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    SiR808DP AN609, 1555m 2783u 6809m 4813m 5804m 2240u 7492m 23-Mar-11 PDF

    Contextual Info: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    SiR804DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiR800DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR802DP 2002/95/EC SiR802DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    67550

    Abstract: 0408 G Diode
    Contextual Info: SPICE Device Model SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiR808DP 11-Mar-11 67550 0408 G Diode PDF

    Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiR800DP 18-Jul-08 PDF

    SIR804DP

    Abstract: sir804dp-t1-ge3
    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 PDF

    8253

    Abstract: AN609
    Contextual Info: SiR802DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    SiR802DP AN609, 05-Feb-10 8253 AN609 PDF

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR800DP 2002/95/EC SiR800DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR802DP 2002/95/EC SiR802DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR802DP 2002/95/EC SiR802DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR804DP 2002/95/EC SiR804DP-T1-GE3 18-Jul-08 PDF

    sir808

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original
    SiR808DP 2002/95/EC SiR808DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir808 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original
    SiR808DP 2002/95/EC SiR808DP-T1-GE3 11-Mar-11 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR802DP 2002/95/EC SiR802DP-T1-GE3 18-Jul-08 PDF

    S10031

    Abstract: SiR802DP
    Contextual Info: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiR802DP 18-Jul-08 S10031 PDF

    SiR800DP

    Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR800DP 2002/95/EC SiR800DP-T1-GE3 18-Jul-08 PDF

    SIR808DP-T1-GE3

    Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter


    Original
    SiR808DP 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIR808DP-T1-GE3 PDF

    Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original
    SiR804DP 2002/95/EC SiR804DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    SiR802DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF