SIR80 Search Results
SIR80 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIR800ADP-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V PPAK SO-8 | Original | 182.16KB | |||
| SIR800ADP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 20V 50.2A/177A PPAK | Original | 181.41KB | |||
| SIR800DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 50A 8-SOIC | Original | 7 | |||
| SIR802DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A 8-SOIC | Original | 9 | |||
| SIR804DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A 8-SOIC | Original | 9 | |||
| SIR808DP-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 25V 20A POWERPAK | Original | 311.57KB |
SIR80 Price and Stock
Vishay Intertechnologies SIR800DP-T1-GE3Trans MOSFET N-CH 20V 50A 8-Pin PowerPAK SO EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR800DP-T1-GE3 | 2,979 | 3 |
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SIR800DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIR800DP-T1-GE3 | Cut Strips | 2,979 | 1 |
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SIR800DP-T1-GE3 | Tape & Reel | 3,000 |
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SIR800DP-T1-GE3 | Reel | 6,000 | 3,000 |
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SIR800DP-T1-GE3 | 3,000 |
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SIR800DP-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SIR804DP-T1-GE3Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR804DP-T1-GE3 | 232 | 5 |
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SIR804DP-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIR804DP-T1-GE3 | Cut Strips | 232 | 52 Weeks | 1 |
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SIR804DP-T1-GE3 | Cut Tape | 3,000 | 3,000 |
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| SIR804DP-T1-GE3 | Tape & Reel | 3,000 |
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SIR804DP-T1-GE3 | Reel | 3,000 |
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SIR804DP-T1-GE3 | 1,146 |
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SIR804DP-T1-GE3 | 3,000 |
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SIR804DP-T1-GE3 | 53 Weeks | 3,000 |
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Vishay Intertechnologies SIR800ADP-T1-GE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR800ADP-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR800ADP-T1-GE3 | Tape & Reel | 6,000 | 23 Weeks | 3,000 |
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SIR800ADP-T1-GE3 | Bulk | 8,036 | 1 |
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| SIR800ADP-T1-GE3 | Tape & Reel | 6,000 |
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SIR800ADP-T1-GE3 | Reel | 6,000 |
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SIR800ADP-T1-GE3 | 3,000 |
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SIR800ADP-T1-GE3 | 27 Weeks | 3,000 |
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Vishay Intertechnologies SIR800DP-T1-RE3- Tape and Reel (Alt: SIR800DP-T1-RE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR800DP-T1-RE3 | Tape & Reel | 52 Weeks | 3,000 |
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SIR800DP-T1-RE3 | Reel | 3,000 |
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SIR800DP-T1-RE3 | 3,000 |
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SIR800DP-T1-RE3 | 53 Weeks | 3,000 |
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Get Quote | ||||||
Vishay Intertechnologies SIR800ADP-T1-RE3N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIR800ADP-T1-RE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR800ADP-T1-RE3 | Tape & Reel | 23 Weeks | 6,000 |
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Buy Now | |||||
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SIR800ADP-T1-RE3 | Bulk | 6,000 | 1 |
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Buy Now | |||||
| SIR800ADP-T1-RE3 | Cut Tape | 1,838 | 1 |
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| SIR800ADP-T1-RE3 | Tape & Reel | 1,838 | 100 |
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SIR800ADP-T1-RE3 | Reel | 6,000 | 3,000 |
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Buy Now | |||||
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SIR800ADP-T1-RE3 | 3,000 |
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Get Quote | |||||||
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SIR800ADP-T1-RE3 | 27 Weeks | 3,000 |
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Get Quote | ||||||
SIR80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir800dp2002/95/ecsir800dp-t1-ge32011/65/eu+2 | |
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Contextual Info: SiR808DP_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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sir808dpan6091555m2783u+6 | |
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Contextual Info: SPICE Device Model SiR804DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C |
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sir804dp2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: SPICE Device Model SiR800DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir800dp2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir802dp2002/95/ecsir802dp-t1-ge32011/65/eu+1 | |
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Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir802dp2002/95/ecsir802dp-t1-ge32011/65/eu+2 | |
67550
Abstract: 0408 G Diode
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sir808dp11-mar-11675500408 g diode | |
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Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
sir800dp18-jul-08 | |
SIR804DP
Abstract: sir804dp-t1-ge3
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sir804dp2002/95/ecsir804dp-t1-ge318-jul-08 | |
8253
Abstract: AN609
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sir802dpan60905-feb-108253 | |
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Contextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir800dp2002/95/ecsir800dp-t1-ge32011/65/eu+2 | |
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Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir802dp2002/95/ecsir802dp-t1-ge32011/65/eu+1 | |
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Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir802dp2002/95/ecsir802dp-t1-ge311-mar-11 | |
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Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir804dp2002/95/ecsir804dp-t1-ge318-jul-08 | |
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sir808Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter |
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sir808dp2002/95/ecsir808dp-t1-ge32011/65/eu+2 | |
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Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir804dp2002/95/ecsir804dp-t1-ge32011/65/eu+2 | |
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Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter |
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sir808dp2002/95/ecsir808dp-t1-ge311-mar-11 | |
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Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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sir804dp2002/95/ecsir804dp-t1-ge32011/65/eu+2 | |
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Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
Original |
sir802dp2002/95/ecsir802dp-t1-ge318-jul-08 | |
S10031
Abstract: SiR802DP
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Original |
sir802dp18-jul-08s10031 | |
SiR800DPContextual Info: New Product SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 50 0.0026 at VGS = 4.5 V 50 0.0034 at VGS = 2.5 V 50 VDS (V) 20 Qg (Typ.) 41 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
Original |
sir800dp2002/95/ecsir800dp-t1-ge318-jul-08 | |
SIR808DP-T1-GE3Contextual Info: SiR808DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0119 at VGS = 4.5 V 20 VDS (V) 25 Qg (Typ.) 7.5 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Synchronous Buck Converter |
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sir808dp2002/95/ec2011/65/eujs709a+2 | |
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Contextual Info: New Product SiR804DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0072 at VGS = 10 V 60 0.0078 at VGS = 7.5 V 60 0.0103 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 24.8 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
Original |
sir804dp2002/95/ecsir804dp-t1-ge32011/65/eu+2 | |
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Contextual Info: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
Original |
sir802dp2002/95/ec2011/65/eujs709a+1 | |