SIPO Search Results

M74HC4094

Abstract: M74HC4094B1 M74HC4094B1R M74HC4094M1R M74HC4094RM13TR M74HC4094TTR PO13H TSSOP16
Contextual Info: M74HC4094 8 BIT SIPO SHIFT LATCH REGISTER 3-STATE • ■ ■ ■ ■ ■ ■ HIGH SPEED : fMAX = 80 MHz (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

M54HC251

Abstract: M54HC251F1R M74HC251 M74HC251B1R M74HC251C1R M74HC251M1R M74HC251B1
Contextual Info: M54HC251 M74HC251 8 BIT SIPO SHIFT REGISTER . . . . . . . . HIGH SPEED tPD = 14 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 4 µA (MAX.) AT TA = 25 °C 6 V HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE

Contextual Info: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data Applications • Automotive • Industrial • Computer SO16 TSSOP16 • Consumer Description Features • High speed: fMAX = 80 MHz (typ.) at VCC = 6 V • Low power dissipation:

dt 92 abb

Abstract: 5SMX12L2510
Contextual Info: VRRM = IF = 2500 V 100 A Fast-Diode Die 5SLX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1664-02 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol

12M6500

Abstract: 5SMX12M6500
Contextual Info: VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-01 July 07 • • • • Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values 1 Parameter

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Abstract: 5slx12n4506
Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: stE n = t> m 7 ^ 2 3 7 S C S - T H O Z M S O 227 doho424 m s g t h N M 5 4 H C 4 0 9 4 i^ in 5 ^ (5 ^ L iiS T r ^ f S ) r a in ^ S G S-THONSON M 7 4 H C 4 0 9 4 - 8-BIT SIPO SHIFT LATCH REGISTER (3-STATE)

Contextual Info: f Z 7 SCS-THOMSON M œ aECTM K M54HC251 M74HC251 8 BIT SIPO SHIFT REGISTER . HIGHSPEED tpD = 14 ns TYP. AT Vcc = 5 V . LOW POWER DISSIPATION Ice = 4 |iA (MAX.) AT T a = 25 'C 6 V • HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) . OUTPUT DRIVE CAPABILITY

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Abstract: 12L2516
Contextual Info: VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2516 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1317-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-02 11 05 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data • Computer  Consumer Description SO-16 PDIP-16 TSSOP-16 Features  High speed: fMAX = 80 MHz (typ.) at VCC = 6 V  Low power dissipation: ICC = 4 A (max.) at TA= 25 °C

LC1 D15

Abstract: PI016 PI022 SIOC sipo PI015 SM5823AP 40s01 16-Bit sipo Shift Register
Contextual Info: SM5823AP Í M E C High-speed, 24-bit SIPO/PISO Converter PINOUT O VER VIEW The SM5823AP is a high-speed, 24-bit serial-toparallel converter and parallel-to-serial converter fabricated in Molygate CM O S. The SM5823AP features a mode selection scheme that allows it to operate as 8-, 16- or 24-bit convert­

M54HC164

Abstract: M54HC164D M54HC164K M54HC164K1
Contextual Info: M54HC164 RAD-HARD 8 BIT SIPO SHIFT REGISTER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 62MHz TYP. at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

M74HC4094B1R

Contextual Info: M74HC4094 8 BIT SIPO SHIFT LATCH REGISTER 3-STATE • ■ ■ ■ ■ ■ ■ HIGH SPEED : fMAX = 80 MHz (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC =4µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE:

Contextual Info: r z 7 SGS-THOMSON Ä 7 # IMMômiOÎIMOÛS M54HCT164 M74HCT164 8 BIT SIPO SHIFT REGISTER • HIGHSPEED tPD = 20 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT Ta = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTLLOADS ■ BALANCED PROPAGATION DELAYS

IPT4006-50H

Abstract: 156 D
Contextual Info: IPT4006-xxH IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT4006-50H is suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction

induction heating circuits

Contextual Info: IPT2006-xxB IP Semiconductor Co., Ltd. High current density due to double mesa technology; SIPOS and Glass Passivation. IPT2006-xx series are suitable for general purpose AC Switching. They can be used as an ON/OFF function In application such as static relays, heating regulation, Induction

Contextual Info: SipOX DAC9331-14 * C o rp o ra tio n * SIGNAL PROCESSING EXCELLENCE 14-BIT MULTIPLYING DAC FEATURES • 14-bit resolution a n d a c c u ra c y ■ 2 a n d 4 -q u a d ra n t m ultiplication ■ Precision laser trim m ed la d d e r ■ Low pow er ■ Single pow er supply o p era tion

Contextual Info: Data Sheet, Doc. No. 5SYA 1689-03 04 14 5SLY 12G1700 Fast-Diode Die VRRM = 1700 V IF = 100 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

Contextual Info: Data Sheet, Doc. No. 5SYA 1690-03 04 14 5SLY 12F1700 Fast-Diode Die VRRM = 1700 V IF = 75 A Ultra low losses Fast and soft reverse-recovery Large SOA Passivation: SIPOS, Nitride plus polyimide Maximum rated values 1 Parameter Symbol Repetitive peak reverse voltage

IGBT abb

Abstract: 5SLX12L2510 a7050 V15C
Contextual Info: VCE IC = = 2500 V 50 A IGBT-Die 5SMX 12L2510 Die size: 12.4 x 12.4 mm Doc. No. 5SYA 1622-03 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

Contextual Info: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data Applications • Automotive • Industrial • Computer SO16 DIP16 TSSOP16 • Consumer Description Features • High speed: fMAX = 80 MHz (typ.) at VCC = 6 V • Low power dissipation:

IGBT abb

Abstract: 5SMX 12M3300 5SLX12M3301 5SMX12M3300
Contextual Info: VCE IC = = 3300 V 50 A IGBT-Die 5SMX 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1621-02 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide

M74HC164

Contextual Info: SbE D • 7T2T537 OGB' HSM ô^b ■ S G T H S C S -T H O M S O N RfflO g (Q iö,[l(g R!lDgS S G M54HC164 M74HC164 T ~ H i ~ 0 ^ '0 £ S- THOMSON 8 BIT SIPO SHIFT REGISTER ■ HIGH SPEED tpD = 18 ns (TYP) at V c c = 5V ■ LOW POWER DISSIPATION Ice = 4 pA at TA = 25°C