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    abb press-pack igbt

    Abstract: 5slx12n4506
    Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


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    12n45075sya1626-03sp4507ch-5600+2abb press-pack igbt5slx12n4506 PDF

    Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original
    12n45075sya1626-01r4507ch-5600 PDF

    IGBT abb

    Abstract: abb press-pack igbt IGBT abb datasheets 5slx12n4506
    Contextual Info: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-00 Aug.04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original
    12n45075sya1626-00spen4507ch-5600+4igbt abbabb press-pack igbtigbt abb datasheets5slx12n4506 PDF