SINGLE PHASE SILICON BRIDGE Search Results

SHB681123E

Contextual Info: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

Contextual Info: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev - HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

SHB636053E

Contextual Info: SENSITRON SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

175C

Abstract: MO-078
Contextual Info: SENSITRON_ SEMICONDUCTOR SHB601031E Technical Data Datasheet 5066, Rev. A Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:

SHB636053E

Contextual Info: SENSITRON SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

SHB601052E

Contextual Info: SENSITRON_ SEMICONDUCTOR SHB601052E Technical Data Datasheet 4308 REV. C Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:

175C

Abstract: SHB681123E
Contextual Info: SENSITRON SEMICONDUCTOR SHB681123E Technical Data Datasheet 5015, Rev A HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 20 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

175C

Abstract: SHB636053E
Contextual Info: SENSITRON_ SEMICONDUCTOR SHB636053E Technical Data Datasheet 4338, Rev B HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: 2500-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

SHB601051E

Abstract: 175C
Contextual Info: SENSITRON_ SEMICONDUCTOR SHB601051E Technical Data Datasheet 5008 REV. B Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES:

TB810

Abstract: TB88 TB805 TB81 epoxy 5000 taitron TB82 TB84 Silicon bridge rectifier 200 V, 4 A
Contextual Info: 8.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB805 – TB810 8.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension

tb66

Abstract: TB610 TB-610 TB605 TB61 TB62 TB64 high voltage bridge rectifier TB-62
Contextual Info: 6.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB605 – TB610 6.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension

TB1010M

Abstract: TB106M TB102m TB1010 TB1005M TB101M TB104M
Contextual Info: 10.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB1005M – TB1010M 10.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds/5 lbs. 2.3kg tension

TB3100

Abstract: TB305 TB31 TB32 TB34 Bridge Rectifier, 30A TB310
Contextual Info: 3.0A SINGLE-PHASE SILICON BRIDGE RECTIFIER TB305 – TB3100 3.0A Single-Phase Silicon Bridge Rectifier Features • High forward surge current capability • Ideal for printed circuit board • High temperature soldering guaranteed: 260°C/10 seconds, at 5 lbs. 2.3kg tension

SHB601112E

Contextual Info: SENSITRON SEMICONDUCTOR SHB601112E TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4289, Rev. - SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-PIN TO-258 MO-078 PACKAGE

175C

Abstract: SHB601112E
Contextual Info: SENSITRON SEMICONDUCTOR SHB601112E TECHNICAL DATA, PROVISIONAL DATA ONLY DATA SHEET 4289, Rev. B SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE DESCRIPTION: A 1200-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-PIN TO-258 MO-078 PACKAGE

SHB601051E

Contextual Info: SENSITRON SHB601051E Technical Data Datasheet 5008 REV. - Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 10 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

semiconductor

Contextual Info: SENSITRON SHB601031E Technical Data Datasheet 5066, Rev. - Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 600-VOLT, 4 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

SHB601052E

Contextual Info: SENSITRON SHB601052E Technical Data Datasheet 4308 REV. B Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

MO-078

Abstract: on 4308
Contextual Info: SHB601052E SENSITRON SEMICONDUCTOR Technical Data Datasheet 4308 REV. A Silicon Carbide Single Phase Full Wave Bridge DESCRIPTION: 1200-VOLT, 5 AMP POWER SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE IN A HERMETIC 5-LEAD TO-258 MO-078 PACKAGE FEATURES: • NO RECOVERY TIME OR REVERSE RECOVERY LOSSES

DBB04

Abstract: DBB04C DBB04G SANYO RECTIFIER
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

FL406

Abstract: FL402 FL401 FL400 600 011
Contextual Info: FL400 Series Single Phase Bridge Rectifiers Features: • In-line miniature single phase silicon bridge. • Surge overload rating: 200 Amperes peak. • Ideal for printed circuit board. • Reliable low cost construction utilizing moulded plastic technique.

Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

DBB04

Abstract: DBB04C DBB04G
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.