DBB04
Abstract: DBB04C DBB04G SANYO RECTIFIER
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
DBB04
DBB04C
DBB04G
SANYO RECTIFIER
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Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.
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EN2793A
DBB04
DBB04]
DBB04C
DBB04G
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DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
Contextual Info: Ordering number:EN648D DBA30 Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. · Plastic molded type. · Peak reverse voltage : VRM=100 to 600V. · Average rectified current : IO=3A
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EN648D
DBA30
1088B
DBA30]
DBA30B
DBA30C
DBA30E
DBA30G
DBA30
DBA30E
DBA30G
silicon diode 3a
DIODE 3A
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lsha
Abstract: DBA30 DBA30B DBA30C DBA30E
Contextual Info: Ordering number:EN648D _ DBA30 ISAßroi Diffused Junction Silicon Diode 3A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier applications. u n 11:m it i • Plaslic m olded type, 1088B •Peak reverse voltage ; V RM= |0 0 to 600V.
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EN643D
DBA30
1088B
DBA30B
DBA30C
DBA30E
D8A30G
lsha
DBA30
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Contextual Info: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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DBB04
Abstract: DBB04C DBB04G 2793a
Contextual Info: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A
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EN2793A
DBB04
DBB04C
DBB04G
DBB04
2793a
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B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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1KAB10E
1KAB20E
1KAB40E
1KAB60E
1KAB80E
1KAB100E
B40C1000
B80C1000
B125C1000trademarks
2011/65/EU
B500C1000
1KAB20
1KAB60
1kab40
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1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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18-Jul-08
1KAB80E
1KAB100E
1KAB10E
1KAB20E
1KAB40E
1KAB60E
B125C1000
B250C1000
B40C1000
B80C1000
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1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new
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11-Mar-11
1KAB60E
1KAB80E
B125C1000
B250C1000
B40C1000
B80C1000
1KAB100E
1KAB10E
1KAB20E
1KAB40E
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52098HA
Abstract: dbb10 DBB10B DBB10E DBB10G
Contextual Info: Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. unit:mm 1112 [DBB10] Specifications
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EN1061D
DBB10
DBB10]
DBB10B
DBB10E
DBB10G
52098HA
dbb10
DBB10B
DBB10E
DBB10G
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b20c1500
Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Contextual Info: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four
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E2733
2KBB05
2KBB10
2KBB20
b20c1500
2KBB20R
B250C1500 1000
b380c1500
B250C1500
2kbb10r
B80C1500
2KBB20
2KBB100R
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DBA500G
Abstract: diode 50A
Contextual Info: DBA500G Ordering number : ENA0699 SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=50A. Specifications
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DBA500G
ENA0699
A0699-3/3
DBA500G
diode 50A
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DBA150
Abstract: DBA150C DBA150G
Contextual Info: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2222C
DBA150
DBA150]
DBA150
DBA150C
DBA150G
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DBA250
Abstract: DBA250C DBA250G
Contextual Info: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.
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ENN2145C
DBA250
DBA250]
DBA250
DBA250C
DBA250G
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DBF10
Abstract: DBF10C DBF10G
Contextual Info: Ordering number : ENN2948A DBF10 Diffused Junction Silicon Diode DBF10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=1.0A. unit : mm
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ENN2948A
DBF10
DBF10]
DBF10C
DBF10G
DBF10
DBF10C
DBF10G
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DBA100
Abstract: DBA100C DBA100G
Contextual Info: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
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EN651D
DBA100
DBA100]
DBA100C
DBA100G
DBA100
DBA100C
DBA100G
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DBD10
Abstract: DBD10C DBD10G
Contextual Info: Ordering number : ENN7030A DBD10 Diffused Junction Silicon Diode DBD10 1.0A Single-Phase Bridge Rectifier Features • • • Package Dimensions Plastic molded structure. Peak reverse voltage : VRM=200V, 600V. Average rectified current : IO=1.0A. unit : mm
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ENN7030A
DBD10
DBD10]
DBD10-TM
max15°
DBD10
DBD10C
DBD10G
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Contextual Info: DBG250G Ordering number : ENA0701 SANYO Semiconductors DATA SHEET DBG250G Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V.
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DBG250G
ENA0701
A0701-3/3
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Contextual Info: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
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EN651D
DBA100
DBA100]
DBA100C
DBA100G
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IR 7807
Abstract: DBG250G
Contextual Info: DBG250G Ordering number : ENA0701 SANYO Semiconductors DATA SHEET DBG250G Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V.
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DBG250G
ENA0701
A0701-3/3
IR 7807
DBG250G
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DBG150G
Abstract: diode 15A
Contextual Info: DBG150G Ordering number : ENA0700 SANYO Semiconductors DATA SHEET DBG150G Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier Features • • • • Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V.
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DBG150G
ENA0700
A0700-3/3
DBG150G
diode 15A
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DBA100
Abstract: DBA100C DBA100G DIODE 100A
Contextual Info: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.
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EN651D
DBA100
DBA100]
DBA100C
DBA100G
DBA100
DBA100C
DBA100G
DIODE 100A
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1210B
Abstract: DBF10 DBF10C DBF10G SANYO RECTIFIER
Contextual Info: DBF10 Ordering number : ENN2948B DBF10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=1.0A. Specifications Absolute Maximum Ratings at Ta=25°C
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DBF10
ENN2948B
DBF10C
DBF10G
1210B
DBF10
DBF10C
DBF10G
SANYO RECTIFIER
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1210B
Abstract: DBF10 DBF10C DBF10G
Contextual Info: DBF10 Ordering number : ENN2948B DBF10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features • • • Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=1.0A. Specifications Absolute Maximum Ratings at Ta=25°C
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DBF10
ENN2948B
DBF10C
DBF10G
1210B
DBF10
DBF10C
DBF10G
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