SINGLE PHASE DIODE BRIDGE RECTIFIER SPECIFICATION Search Results
SINGLE PHASE DIODE BRIDGE RECTIFIER SPECIFICATION Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| IH5012CDE | Rochester Electronics LLC | IH5012 - SPST, 4 Func, 1 Channel, CDIP16 |
|
||
| IH5012MDE/B | Rochester Electronics LLC | IH5012 - SPST, 4 Func, 1 Channel |
|
||
| DG201AK/B | Rochester Electronics LLC | DG201A - 15.0V SPST CMOS Switch |
|
||
| DG188AA | Rochester Electronics LLC | DG188A - SPDT, 1 Func, 1 Channel, MBCY10 |
|
||
| DG303A/BCA | Rochester Electronics LLC | DG303A - SPDT, 2 Func, CMOS - Dual marked (M38510/11604BCA) |
|
SINGLE PHASE DIODE BRIDGE RECTIFIER SPECIFICATION Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DBB04
Abstract: DBB04C DBB04G SANYO RECTIFIER
|
Original |
en2793adbb04dbb04cdbb04g+1 | |
|
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A. |
Original |
en2793adbb04dbb04cdbb04g | |
DBB04
Abstract: DBB04C DBB04G
|
Original |
en2793adbb04dbb04cdbb04g | |
|
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A. |
Original |
en2793adbb04dbb04cdbb04g | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD DB107G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB107G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB107G is suitable for automatic insertion. - DFM FEATURES |
Original |
db107gdb107gl-dfm-tdb107gp-dfm-tqw-r227-003+1 | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD DB106G DIODE 1.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER + DESCRIPTION The UTC DB106G is a 1.0A glass passivated single-phase bridge rectifier. The UTC DB106G is suitable for automatic insertion. - DFM FEATURES |
Original |
db106gdb106gl-dfm-tdb106gp-dfm-tqw-r227-002 | |
DBA30
Abstract: DBA30B DBA30C DBA30E DBA30G silicon diode 3a DIODE 3A
|
Original |
en648ddba301088bdba30b+5 | |
lsha
Abstract: DBA30 DBA30B DBA30C DBA30E
|
OCR Scan |
en643ddba301088bdba30b+4 | |
semiconductor
Abstract: hirect H507CH Hirect diode H400TB
|
Original |
semiconductorhirect h507chhirect diodeh400tb | |
DBB04
Abstract: DBB04C DBB04G 2793a
|
OCR Scan |
en2793adbb04dbb04cdbb04g+1 | |
1KAB60
Abstract: 1kab20e
|
Original |
1kab10e1kab20e1kab40e1kab60e+7 | |
B500C1000
Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
|
Original |
1kab10e1kab20e1kab40e1kab60e+10 | |
1KAB80E
Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
|
Original |
18-jul-081kab80e1kab100e1kab10e+7 | |
1KAB60E
Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
|
Original |
11-mar-111kab60e1kab80eb125c1000+7 | |
|
|
|||
52098HA
Abstract: dbb10 DBB10B DBB10E DBB10G
|
Original |
en1061ddbb10dbb10bdbb10e+2 | |
DBA10B
Abstract: DBA10 D288M DBA10C DBA10E DBA10G Sanyo Electric
|
Original |
en646ddba10dba10bdba10c+4 | |
b20c1500
Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
|
Original |
e27332kbb052kbb102kbb20+8 | |
DBA500G
Abstract: diode 50A
|
Original |
dba500gena0699a0699-3/3diode 50a | |
DBA500GContextual Info: DBA500G Ordering number : ENA0699A SANYO Semiconductors DATA SHEET DBA500G Diffused Junction Silicon Diode 50A Single-Phase Bridge Rectifier Features • • • Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=50A Specifications |
Original |
dba500gena0699aa0699-3/3 | |
HA 3089Contextual Info: Ordering number : ENN2145C DBA250 Diffused Junction Silicon Diode DBA250 25.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. |
Original |
enn2145cdba250dba250cdba250g+1 | |
|
Contextual Info: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. |
Original |
enn2222cdba150dba150cdba150g | |
|
Contextual Info: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. |
Original |
enn2222cdba150 | |
|
Contextual Info: Ordering number : ENN2222C DBA150 Diffused Junction Silicon Diode DBA150 15.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V. |
Original |
enn2222cdba150dba150cdba150g | |
DBA150
Abstract: DBA150C DBA150G
|
Original |
enn2222cdba150dba150cdba150g | |