DBB04 Search Results

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C DBB10C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

DBA40C

Abstract: 416B 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C 638C
Contextual Info: 120 - - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

DBB04

Abstract: DBB04C DBB04G
Contextual Info: — X Na2793 t £ L f r z . T < t i È ^ > u □ yí&mm^m DBB04 o .4 a ^ ÿ s y y 'y $m ?' vvstmm. • ■ « î I l B ï - J l ' K f l i î i . ■ : V RM = 2 00V , 60 0 V , ■ W á M i f t 'í t i f t : I 0 = 0 .4 A . ffl w  ^Æ W A bsolute Maximum Ratings / Ta = 25°C

Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

DBB04

Abstract: DBB04C DBB04G
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Package Dimensions Features • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

DBB04

Abstract: DBB04C DBB04G
Contextual Info: —X Na2793 t £ Lfrz.T < tiÈ ^ > u □ y iÈ m m ^ m DBB04 • -î m i ^ u o. 4a^ÿs y y 'y vs> K m • « î I l B ï - J l ' K f l i î i . ■ : VRM = 200V, 600V, ■W á M ift'ítift : Io = 0.4A. ffl w  ^Æ W A b so lu te M aximum Ratings / Ta = 25°C

DFD30TE

Abstract: DBF60B DFC15TL DFD30TG
Contextual Info: SAMYO RECTIFIERS BRIDGE D IO D ES 100 290 DBB04B DBB08B DBB10B DBF10B DBF20B DBF40B DBF60B DBB04C DBB08C DBB10C DBF10C DBF20C DBF40C DBF60C V rm V Io(A) 0.4 0.8 1.0 2.0 4.0* 6.0* * : W ith AI h e a t sink 400 600 DBB04E DBB08E DBB10E DBF10E DBF20E DBF40E

DBB04

Abstract: DBB04C DBB04G 2793a
Contextual Info: O rd e rin g n u m b e r: EN2793A DBB04 N0.2793A Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier F e a tu re s •Single-phase bridge rectifier use • Plastic molded structure • Peak reverse voltage : Vrm = 200 to 600V ■Average rectified current : Io = 0.4A

416B

Abstract: 436B DBA10E DBA20B DBA20C DBA20E DBA30B DBA30C
Contextual Info: 120- - & & DAP211 DAP213 DBAIOB DBAIOC DBAIOE DBA 1 OG DBA20B DBA20C DBA20E DBA30B DBA30C DBA30E DBA30G DBA40B DBA40C DBA40E DBA60B DBA60C ÜBA60E DBA100B DBA100C DBA100E DBA100G DBA150B DBA150C DBA150E DBA150G DBA250B DBA250C DBA250E DBA250G DBB04B DBBÛ4C

DBB04

Abstract: DBB04C DBB04G SANYO RECTIFIER
Contextual Info: Ordering number :EN2793A DBB04 Diffused Junction Silicon Diode 0.4A Single-Phase Bridge Rectifier Features Package Dimensions • Single-phase bridge rectifier use. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=0.4A.

Contextual Info: DBB04B Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current400m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.30 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m

DBB50C

Abstract: DBB50 DBB50E DBA40C DBA10B DBF60B DBA30C DBB-50
Contextual Info: SANYO SEM ICONDUCTOR CORP O IE D | 7n7Q 7b 0002512 T-OZ-01 7 | VERY HIGH-SPEED RECTIFIERS HP N \ J hh (VÌ • 200 ter ' IoCAÏ - ^.Remarks j. ; \ „tn s f"' 1.1 O D LAUC 50 Surface mount type H O R IZO N T A L DEFLECTION-USE HIGH-SPEED DAM PER DIODES ••• ' J

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

DBB08G

Abstract: D0201AD DFJ106 SS2018 DLC20C sb30 09 SCHOTTKY BARRIER BRIDGE RECTIFIERS
Contextual Info: High-speed Rectifiers Super fast-recovery diodes v a i(v ) 10(A) me . 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C 0FE3ΠDFE30G Package type br(ns) 600 <00 too too too DO-41 SS, 5 mm pitch D 0 -15L DO-201AD Ultrahigh-speed Rectifiers (Low-loss diodes)

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

DBF60B

Abstract: DBA40C DD50F oba3 DBB10C
Contextual Info: High-speed Rectifiers Super fast recovery diodes Vrm 00 400 »0 10 » . OFJIOC DFJ10G 100 DO-41 SS 5 r m 15 DFD15C DFD15E DFD15G 100 DO-15L 3.0 DFE30C DFE30E DFE30G 100 00-201 AD 1.0 .DFJ1DE. " Package type

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

DFJ10E

Abstract: DBF60B DBB08B DLC20C DBF60E DBA150E DO-41SS
Contextual Info: High-speed Rectifiers Super fast-recovery diodes V rm (V) lo (A) 1.0 DFJ10C DFJ10E DFJ10G 1.5 DFD15C DFD15E DFD15G 3.0 DFE30C DFE30E DFE30G Package type trr (ns} 600 200 100 y - .il DO-41 SS, 5 mm pitch 100 DO-15L 100 DO-201 AD Very High-speed Rectifiers (Low-loss diodes)