52098HA Search Results

Contextual Info: Ordering number:EN2821A DCF015 Silicon Epitaxial Planar Type Anode Common High-Speed Switching Diode Features Package Dimensions • Very small-sized package permitting DCF015applied sets to be made small and slim. · Fast switching speed. · Twin type, anode common.

Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

Contextual Info: Ordering number:EN1159C DCA015 Silicon Epitaxial Planar Type Anode Common High-Speed Switching Diode Features Package Dimensions • Ideally suited for use in hybrid ICs because of very small-sized package. · Fast switching speed. · Economical because 2pcs, are contained.

Contextual Info: Ordering number:EN4886 FX603 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Composite type composed of two low ON-resistance P-channel MOSFET chips for ultrahigh-speed switching and low-voltage drive. · Facilitates high-density mounting.

DBB08G

Abstract: DBB08 DBB08C
Contextual Info: Ordering number :EN2772B DBB08 Diffused Junction Silicon Diode 0.8A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. · Two type of package available, surface mount type

EN3115

Abstract: 2SA1753 FC117
Contextual Info: Ordering number:EN3115 FC117 PNP Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

4924

Abstract: 1SV272 EN4924 marking mv
Contextual Info: Ordering number :EN4924 1SV272 Silicon Epitaxial Type Transmitting, Receiving Antenna-switch Use PIN Diode Features Package Dimensions • Series connection of 2 elements in a Very smallsized package facilitates high-density mounting and permits 1SV272-applied equipment to be

FP302

Abstract: 2SC4520 SB05-05CP
Contextual Info: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.

FP402

Abstract: EN5048
Contextual Info: Ordering number:EN5048 FP402 N-Channel MOS Silicon FET Very High-Speed Switching Applicaitons Features Package Dimensions • Low ON resistance. · Very high-speed switching. · Complex type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting.

BX-1458

Abstract: IC UA 1458 marking 503 BX1458 2SB1202 FX503
Contextual Info: Ordering number:EN4903 FX503 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX503 houses two chips, each being equivalent

BD NPN transistors

Abstract: 2SC5245 FC157
Contextual Info: Ordering number:EN5433 FC157 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: Ordering number : EN2799B DBF60G 6.0A Single-Phase Bridge Rectifier http://onsemi.com Features • • • • Glass passivation for high reliability Plastic molded structure Peak reverse voltage : VRM=600V Average output current : IO=6.0A Specifications Absolute Maximum Ratings at Ta=25°C

429mo

Contextual Info: [ordering number :EN621C | BTD4M Silicon Planar Type SA fiYO l Bidirectional Diode Features Ê Package Dimensions * Sm all si m and light weight. • D H D type package. unii: mm / / Ä Specifications Absolute Maximum Ratings at Ta = 2S *Ç /'/ Parameter / ¥

DBF60

Abstract: DBF60C DBF60G
Contextual Info: Ordering number:EN2799A DBF60 Silicon Diffused Junction Type 6.0A Single-Phase Bridge Rectifier Features Package Dimensions • Glass passivation for high reliability. · Plastic molded structure. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=6.0A.

EN5030

Contextual Info: Ordering number:EN5030 FX510 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2PNP transistors contained in one package, facilitating high-density mounting. · The FX510 houses two chips, each being equivalent

EN5387

Abstract: FX901 PNP Transistor MOSFET
Contextual Info: Ordering number:EN5387 FX901 PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low

FX207

Abstract: marking 207
Contextual Info: Ordering number:EN5050 FX207 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX207] Switching Time Test CIrcuit 1:No Contact 2:Gate

2SA1496

Abstract: FC129
Contextual Info: Ordering number:EN3283 FC129 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features Package Dimensions • On-chip bias resistance (R1=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.

Contextual Info: Ordering number : EN2772C DBB08 0.8A Single-Phase Bridge Rectifier http://onsemi.com Features • • Plastic molded structure and ultrasmall package making it easy to make DBB08-applied sets smaller. Glass passivation for high reliability. Specifications

Contextual Info: Ordering number:EN4917 FX205 P-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · Low-voltage drive. unit:mm 2121 [FX205] Switching Time Test CIrcuit 1:No Contact

TA-0118

Abstract: MOSFET FOR 50HZ SWITCHING APPLICATIONS
Contextual Info: Ordering number:EN4893 FX853 MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward

koyo

Abstract: 4336 2SK303 n-channel 4336 FC13 43363
Contextual Info: Ordering number:EN4336 FC13 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Features Package Dimensions • Composite type with 2 FETs contained in the CP package currently in use, improving the mounting

DBA100

Abstract: DBA100C DBA100G
Contextual Info: Ordering number:EN651D DBA100 Diffused Junction Silicon Diode 10.0A Single-Phase Bridge Rectifier Features Package Dimensions • Plastic molded structure. · Glass passivation for high reliability. · Peak reverse voltage:VRM=200, 600V. · Average rectified current:IO=10.0A.

2SC4452

Abstract: FC140
Contextual Info: Ordering number:EN3361 FC140 NPN Epitaxial Planar Silicon Composite Transistor High-Speed Switching Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.