SILICONIX SOT23 MARKING Search Results
SILICONIX SOT23 MARKING Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MG80C186-10/BZA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
|
||
| ICM7555MTV/883 |
|
ICM7555MTV/883 - Dual marked (5962-8950303GA) |
|
||
| MQ80C186-10/BYA |
|
80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) |
|
||
| 54121/BCA |
|
54121 - Multivibrator, Monostable - Dual marked (M38510/01201BCA) |
|
||
| 54AC20/SDA-R |
|
54AC20/SDA-R - Dual marked (M38510R75003SDA) |
|
SILICONIX SOT23 MARKING Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
DG449DS-T1-E3
Abstract: HP4192A dg449 dg449ds
|
Original |
DG449 OT23-8 DG449 18-Jul-08 DG449DS-T1-E3 HP4192A dg449ds | |
DG449DS-T1-E3
Abstract: HP4192A dg449
|
Original |
DG449 OT23-8 DG449 11-Mar-11 DG449DS-T1-E3 HP4192A | |
|
Contextual Info: DG449 Vishay Siliconix High Voltage Single SPDT Analog Switch in SOT23-8 DESCRIPTION FEATURES The DG449 is a dual supply single-pole/double-throw • • • • • • SPDT switches. On resistance is 38 and flatness is 2.6 max over the specified analog signal range. These analog |
Original |
DG449 OT23-8 DG449 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
DG449DS-T1-E3
Abstract: DG449DS HP4192A DG449 SOT23 MA COM marking
|
Original |
DG449 OT23-8 DG449 08-Apr-05 DG449DS-T1-E3 DG449DS HP4192A SOT23 MA COM marking | |
|
Contextual Info: Si91842 Vishay Siliconix 150-mA Low-Noise LDO Regulator With Error Flag and Discharge Option FEATURES D Output—Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.5, 2.6, 2.8, 2.85, 3.0, 3.3, 5.0-V Output Voltage Options D Thin SOT23-5 Package D Ultra Low Dropout—130 mV at 150-mA Load |
Original |
Si91842 150-mA OT23-5 10-Hz 100-kHz 110-mA 300-mA | |
mv silicon mp3 player
Abstract: Si91842DT-29-T1 100-W Si91842 Si91842DT-12-T1 Si91842DT-18-T1 Si91842DT-25-T1 Si91842DT-26-T1 Si91842DT-285-T1 Si91842DT-28-T1
|
Original |
Si91842 150-mA OT23-5 Dropout--130 Noise--75 10-Hz 100-kHz 110-mA mv silicon mp3 player Si91842DT-29-T1 100-W Si91842DT-12-T1 Si91842DT-18-T1 Si91842DT-25-T1 Si91842DT-26-T1 Si91842DT-285-T1 Si91842DT-28-T1 | |
TP0610K-T1-E
Abstract: TP0610K-T1-E3
|
Original |
TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3 | |
SI2304DS marking code SOT-23
Abstract: A4* marking code A4 MARKING CODE
|
OCR Scan |
2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE | |
|
Contextual Info: SQ2308ES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc |
Original |
SQ2308ES 2002/95/EC AEC-Q101 O-236 OT-23) OT-23 SQ2308ES-T1-GE3 2002/95/EC. 2002/95/EC | |
|
Contextual Info: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED ) |
OCR Scan |
Si2308DS O-236 OT-23) S-58492â 15-June-98 | |
SI2333DS-T1-E3Contextual Info: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET |
Original |
Si2333DS O-236 OT-23) Si2333DS-T1-E3 Si2333DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
Si2315BDS-T1-E3Contextual Info: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS* |
Original |
Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
si2323ds
Abstract: Si2323DS-T1-GE3
|
Original |
Si2323DS O-236 OT-23) Si2323DS-T1 Si2323DS-T1-E3 Si2323DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC | |
|
Contextual Info: Si2319DS Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET ID (A)b 0.082 at VGS = - 10 V - 3.0 0.130 at VGS = - 4.5 V - 2.4 APPLICATIONS |
Original |
Si2319DS O-236 OT-23) Si2319DS-T1-E3 Si2319DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
|
|
|||
SI2301DS
Abstract: S5135
|
Original |
Si2301DS O-236 OT-23) S-51354--Rev. 11-Dec-96 S5135 | |
Si2302DSContextual Info: Si2302DS N-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2302DS (A1)* *Marking Code Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
Original |
Si2302DS O-236 OT-23) S-51353--Rev. 11-Dec-96 | |
SQ2303ES
Abstract: marking code 604 SOT23
|
Original |
SQ2303ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2303ES* OT-23 SQ2303ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2303ES marking code 604 SOT23 | |
SQ2318ESContextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2318ES* OT-23 SQ2318ES-T1-GE3 2011/65/EU 2002/95/EC. SQ2318ES | |
|
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
|
Contextual Info: SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
Original |
SQ2360EES AEC-Q101 2002/95/EC O-236 OT-23) OT-23 SQ2360EES-T1-GE3 2011/65/EU 2002/95/EC. | |
S1217
Abstract: TO-92-18RM
|
Original |
TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-92-18RM O-226AA O-236 OT-23) 2011/65/EU 2002/95/EC. S1217 TO-92-18RM | |
|
Contextual Info: Si2321DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.057 at VGS = - 4.5 V - 3.3 - 20 0.076 at VGS = - 2.5 V - 2.8 0.110 at VGS = - 1.8 V - 2.3 • Halogen-free Option Available • TrenchFET Power MOSFETS |
Original |
Si2321DS O-236 OT-23) Si2321DS-T1-E3 Si2321DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
|
Contextual Info: Si2307BDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.078 at VGS = - 10 V - 3.2 0.130 at VGS = - 4.5 V - 2.5 VDS (V) - 30 • Halogen-free Option Available • TrenchFET Power MOSFET RoHS COMPLIANT TO-236 |
Original |
Si2307BDS O-236 OT-23) Si2307BDS-T1-E3 Si2307BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |
|
Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21 |
Original |
Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. | |