SILICONIX 511 Search Results
SILICONIX 511 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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PA 0016 PIONEER
Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
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j-23548k28742pa 0016 pioneerpioneer pa 0016+8 | |
HA 12046
Abstract: HA 12045 DG126 DG129 DG140 A2547 12049 DG129BP
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a25473sdd1s043dg126/129/140t-51-11+9 | |
siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
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j-23548k24123i39-40inz3766+11 | |
DG200ABAContextual Info: SILICONIX INC 03 8254735 SILICONIX D e | flES4735 DD1S1E4 7 | INC 03E 12124 DG200A Dual Monolithic SPST CMOS Analog Switch D f f 1 Siliconix .J tV incorporated T—51—11 FEATURES BENEFITS APPLICATIONS • + 15 V Input Signal Range • Wide Dynamic Capabilities |
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fles4735dg200at--51--11dg200aba | |
ILS-1206
Abstract: Vishay Siliconix COILCRAFT DT3316-103 sprague catalog CRCW1206101J DT3316 VJ1206Y103KXA VJ1206Y103KXAAT Surface mount NPN/PNP complementary transistor VJ1206Y222KXAAT
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an715si9145crcw1206102jrt1crcw1206103jrt1+12 | |
SILICONIX DG201
Abstract: DG202 SILICONIX DQ202 DG201A dg201abk siliconix DG201 dg202cj siliconix
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55473sdg201ydq201adg202+9 | |
VP0610T
Abstract: over charge protection circuit diagram for 12V ni mh DT-1608-104 2N7002 AN710 AN715 IN4148 LL4148 Si9114 Si9145
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an715si9145vp0610tover charge protection circuit diagram for 12v ni mh+6 | |
D10DE
Abstract: DGP508A HP3330B DGP508AAK DGP508ADJ
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25473sdgp508adg508a00123sa+5 | |
HP3330BContextual Info: SILICONIX INC 03 8254735 SILICONIX DiEJ ÛBS4735 0015H40 1 INC 03E 12240 DG400-405 Low-Power - High-Speed CMOS Analog Switches j y Silîconlx Incorporated T-51-11 FEATURES BENEFITS APPLICATIONS • +15. V Input Range • Wide Dynamic Range • ON Resistance < 35 Cl |
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bs47350015h40dg400-405t-51-11+4 | |
Siliconix Application Note
Abstract: 9b47 2N7002 AN710 AN715 IN4148 LL4148 Si9114 Si9145 VP0610T
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an715si9145siliconix application note9b47+6 | |
Siliconix dg506acj
Abstract: DG506A SILICONIX b5473 SI8601 en 12341 DQ506AAR DQ506A
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2s4735001s331dg506a/507a16-channel+11 | |
CD4001 Application
Abstract: OWR1 DG305Acj
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a2s473sdg304a/305a/306a/3t-51-11dg304a+8 | |
og5040-5045
Abstract: DG5045CJ DG5044 D0504 7511 audio output dg5042ak
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as5i735dg5040-5045t-51-11dq5040+7 | |
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Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR Super-247 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 551 511 000 85 °C, 85 % RH FAIL PERCENTAGE 0.00 HAST 530 53 000 130 C, 85 % RH 0.00 Power Cycle |
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super-24715-may-12 | |
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Contextual Info: 2N5114/5115/5116 Vishay Siliconix P-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Max (ns) 2N5114 5 to 10 75 –10 16 2N5115 3 to 6 100 –10 30 2N5116 1 to 4 150 –10 42 FEATURES BENEFITS APPLICATIONS D D D D |
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2n5114/5115/51162n51142n51152n5116+1 | |
2N5114
Abstract: 2N5116 2N4856A 2N5115 AN104
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2n5114/5115/51162n51142n51152n5116+4 | |
2N5114
Abstract: "P-Channel JFET" "P-Channel JFETs" 2N5116 2N4856A 2N5115 AN104
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2n5114/5115/51162n51142n51152n5116+5 | |
2N5114
Abstract: 2N4856A 2N5115 2N5116 AN104
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2n5114/5115/51162n51142n51152n5116+2 | |
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Contextual Info: SPICE Device Model SiR800DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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sir800dp18-jul-08 | |
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Contextual Info: SQJ486EP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sqj486epan6099221m3195m+6 | |
30338Contextual Info: SiHF6N40D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sihf6n40dan6093295m8466m+5 | |
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Contextual Info: SiHF5N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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sihf5n50dan6090725m8519m+4 | |
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Contextual Info: 2N5114J AN/J ANTX/JANTXV Series Vishay Siliconix P-Channel JFETs 2N 5114 J AN/J ANTX/JANTXV 2N 5115J AN/J ANTX/JANTXV 2N 5116 J AN/JANTX/J ANTXV PRODUCT SUMMARY Part Number VGS off (V) r D S(on) Max (£2) Id (off) TVp (pA) toN Max (ns) 2N5114 5 to 10 75 -1 0 |
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2n5114j5115j2n51142n5115+3 | |
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Contextual Info: IRFIBF20G_RC, SiHFIBF20G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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irfibf20gsihfibf20gan60931-may-10 | |