SILICON POWER SWITCHING DIODE Search Results

fet irf830

Abstract: MTM4N45
Contextual Info: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds

Motorola transistors MJE3055 TO 127

Abstract: MJE1092 transistors 2sd673 2SC1419 transistor MJE6043 BU124 MJW16010 BD590 2SB654 bdw93c pin configuration
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN D44VH PNP D45VH Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high–speed switching applications, such as switching regulators and high frequency inverters.

2SD560

Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is

2SC4554

Abstract: 2sc4554 nec
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.

Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

2SA1046

Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

Marking H2

Abstract: code M.H diode marking H2 M1MA151 marking M1MA151KT1 M1MA152KT1 SC59 H222 H21 MARKING
Contextual Info: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC59 package which is designed for low power surface mount applications. M1MA151KT1 M1MA152KT1

2SC4553

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4553 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4553 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a

M1MA151KT1

Abstract: M1MA152KT1 SMD310
Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

M1MA152AT1

Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

H122

Abstract: M1MA151 marking marking H1 M1MA151AT1 M1MA152AT1
Contextual Info: Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use M1MA151AT1 M1MA152AT1 in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications.

Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

M1MA151 marking

Abstract: M1MA151AT1 M1MA152AT1 SMD310
Contextual Info: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.

Contextual Info: M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.

Contextual Info: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount

Contextual Info: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.

M1MA141KT1

Abstract: M1MA142KT1 SMD310
Contextual Info: ON Semiconductort M1MA141KT1 M1MA142KT1 Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.