SILICON PNP HIGH POWER TRANSISTOR Search Results

PNP Transistors

Contextual Info: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current

40394

Abstract: PNP Transistors MD14
Contextual Info: 40394 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40394 VCEV 60 hFE 15 IC .15 Notes VCEO 40 hFE A .001 COB Polarity PNP ICEV Power Dissipation

BCP68

Abstract: BCP69T1 BCP69T3
Contextual Info: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

ADC 808

Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
Contextual Info: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS

2sc 1177

Abstract: MJ802 MJ4502 Tra 1120 r MJ4502 MJ802
Contextual Info: MJ4502 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER PNP SILICON TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. High DC Current Gain - hFE = 25-100 @ lc ” 7.5 A

2N5037

Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

transistor c 3206

Abstract: BD808 transistor BD 139 IC CD 3207 BD807 bd810
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP TVansistor *Motorola Prwtorrtd Devfc« 10 AMPERE POWER TRANSISTORS PNP SILICON 60,80 VOLTS 90 WATTS . . . designed for use ¡n high power audio amplifiers utilizing complementary or quasi

d1117

Abstract: TRANSISTOR 2202 BL 2SA1988 C10535E C10943X MEI-1202 MP-88
Contextual Info: DATA SHEET Silicon Power Transistor 2SA1988 PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SA1988 is PNP Silicon Power Transistor that designed for audio frequency power amplifier. 1.0 4 20.5MAX. 5.0 • High Voltage VCEO = −200 V

40348

Contextual Info: 40348 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40348 VCEV 90 hFE 30 IC .30 Notes VCEO 65 hFE A .30 COB Polarity NPN ICEV Power Dissipation

PNP Transistors

Abstract: TO-205AD 40349
Contextual Info: 40349 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40349 VCEV 160 hFE 30 IC .15 Notes VCEO 140 hFE A .15 COB Polarity NPN ICEV Power Dissipation

NTE281

Abstract: NTE280 NTE281MCP
Contextual Info: NTE280 NPN & NTE281 (PNP) Silicon Complementary Trasistors Audio Power Amplifier Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.

semiconductor relay 6v

Abstract: 2SA1287 2SC3247
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1287 FOR RELAY DRIVE, POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1287 is silicon PNP epitaxial type transistor. Designed with high Voltage, high collector current, dissipation and high

NTE2305

Contextual Info: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

2SA70

Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit

nte37

Abstract: NTE37MCP NTE36
Contextual Info: NTE36 NPN & NTE37 (PNP) Silicon Complementary Transistors AF Power Amplifier, High Current Switch Description: The NTE36 (NPN) and NTE37 (PNP) are silicon complementary transistors in a TO3P type case designed for AF power amplifier and high current switching applications.

MJE105

Abstract: MJE205 MJE105K MJE205K CASE 90-05
Contextual Info: MJE105 SILICON MJE105K MEDIUM-POWER PNP SILICON TRANSISTORS 5 AMPERE POWER TRANSISTORS . . . for use as an output device in complementary audio amplifiers up to 20-Watts music power per channel. PNP SILICON • High DC Current Gain - hFE = 25-100 @ lc = 2.0 A

JE2955

Abstract: MJE2955 mje2955 data JE2955K MJE3055K mje3055 MJE2955K transistor MJE3055 mje3055 data SAA 1283
Contextual Info: MJE2955 SILICON MJE2955K HIGH POWER PNP SILICON TRANSISTORS 10 AMPERE POWER TRANSISTORS PNP SILICON . . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current-Gain — Bandwidth Product — f j = 2.0 M H Z (Min)

250w npn

Abstract: NPN 250W NTE60 NTE61 NTE61MCP
Contextual Info: NTE60 NPN & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Contextual Info: ON Semiconductort MJ4502 High−Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. • High DC Current Gain —

2N6378

Abstract: 2N6379 2N6377 2N6474 PMI ADC 17S200
Contextual Info: 2N6377 2N6378 2N6379 HIGH-POWER PNP SILICON POWER TRANSISTORS 50 AMPERE POWER TRANSISTORS PNP SILICON 80,100,120 VOLTS 250 WATTS .designed for use in industrial-military power amplifier and switching circuit applications. Low Collector-Emitter Saturation Voltage Ir = 20 Adc

MJE15034G

Abstract: MJE15035G MJE15034 MJE15035 mje1503x 160-100MS
Contextual Info: MJE15034 NPN, MJE15035 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO−220, NPN & PNP Devices http://onsemi.com Complementary silicon plastic power transistors are designed for use as high−frequency drivers in audio amplifiers.

transistor BD 141

Abstract: transistor BD 378 TRANSISTOR BD 168 MJE712 MJE711 bd 125 equivalent MJE710 MJE720 bd transistor series plji
Contextual Info: MJE710 SILICON MJE711 MJE712 PNP SILICON MEDIUM-POWER TRANSISTORS 1.5 AMPERE POWER TRANSISTORS PNP SILICON . . . designed fo r use in low power amplifiers, as drivers in high-power amplifier and medium-speed switching circuits. • DC Current Gain hpE = 40 (Min) @ I q “ 150 mAdc

ADC 808

Abstract: bd 808 BD808 BD810 T1 BD 139
Contextual Info: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi