SILICON OPTICAL CONSTANTS Search Results

SIR-34ST3

Abstract: RPT-34PB3F SIR-34ST3F
Contextual Info: Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Dimensions Units : mm Applications Optical control equipment 1.1 Notes :

Contextual Info: Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. Dimensions Units : mm Applications Optical control equipment 1.1 Notes :

RPM-22PB

Contextual Info: Phototransistor, side view type RPM-22PB The RPM-22PB is a silicon phototransistor in a side-facing package. High sensitivity with 1.5 lens. Dimensions Units : mm 1.9 2.54±0.1 1.0 Applications Optical control equipment Receiver for sensors 4.1

Contextual Info: Phototransistor, side view type RPM-22PB The RPM-22PB is a silicon phototransistor in a side-facing package. High sensitivity with 1.5 lens. Applications Optical control equipment Receiver for sensors 1.9 2.54±0.1 1.0 Dimensions Units : mm 4.1

RPT-34PB3F

Abstract: SIR-34ST3F 750Lux
Contextual Info: RPT-34PB3F Sensors Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. !External dimensions Units : mm !Applications Optical control equipment

SIR-341ST3F

Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

Contextual Info: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking

SIR-320ST3F

Contextual Info: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

Contextual Info: SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household

uv phototransistor

Abstract: solar cell transistor infrared monocrystalline solar cell telefunken Dielectric Constant Silicon Nitride power density for monocrystalline solar cell External Quantum Efficiency solar 10MW BPW21R short distance measurement ir infrared diode Telefunken Phototransistor
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 05.00 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 1. p - GaAs : Si Al n - GaAs : Si 94 8200

BPW21R

Abstract: emitter "1060 nm" RECTIFIER 8212 near IR photodiodes with daylight filter photodiode application luxmeter osram Phototransistor 7.6 v AXIAL INCANDESCENT equivalent of transistor 80113 Tungsten power density for monocrystalline solar cell
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80113 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 62. p - GaAs : Si Al

Piezo Ceramic plates

Abstract: microwave movement detection cantilever for AFM 8484 au 3d scanner
Contextual Info: Agilent 5600LS AFM Versatile AFM for Large and Small Samples Data Sheet Features and Benefits System Overview • Fully addressable and programmable 200 mm x 200 mm stage The Agilent 5600LS large-stage AFM is ready to deliver atomic-resolution results. The versatile 5600LS is the

TSAL6200

Abstract: pn junction diode structure phototransistor K-T TSAL6200 application circuit
Contextual Info: Vishay Semiconductors Physics and Technology Emitters Materials Document Number 80086 02-02 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si

uv phototransistor

Abstract: 8602 rectifier photodiode ge uv photodiode, GaP TSAL6200 ga09 80086 "photoconductive" 1015
Contextual Info: VISHAY Vishay Semiconductors Physics and Technology Emitters www.vishay.com 1 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. Structure of the chip is displayed in figure 1. Al p - GaAs : Si n - GaAs : Si 94 8200

ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.

toy IR remote control circuit diagram

Abstract: Emitting SIR-34ST3F
Contextual Info: SIR-34ST3F Sensors Infrared light emitting diode, top view type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

Contextual Info: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

toy IR remote control circuit diagram

Abstract: SIR-341ST3F 940NM data sheet
Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

toy IR remote control circuit diagram

Abstract: 940NM data sheet SIR-563ST3F
Contextual Info: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

Physics and Technology

Abstract: physics pn junction diode structure
Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors

Contextual Info: SIR-563ST3F SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

Contextual Info: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,