SILICON OPTICAL CONSTANTS Search Results

RPT-34PB3F

Abstract: SIR-34ST3F 750Lux
Contextual Info: RPT-34PB3F Sensors Phototransistor, top view type RPT-34PB3F The RPT-34PB3F is a silicon planar phototransistor. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. !External dimensions Units : mm !Applications Optical control equipment

SIR-341ST3F

Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

SIR-320ST3F

Contextual Info: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Contextual Info: Introduction CHAPTER 01 1 Light and opto-semiconductors 1-1 Light 1-2 Opto-semiconductors 2 Opto-semiconductor lineup 3 Manufacturing process of opto-semiconductors 1 Introduction 1. Light and opto-semiconductors 1-1 Light Definition of light Light, like radio waves, is a type of electromagnetic wave.

Contextual Info: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

Contextual Info: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,

Contextual Info: SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household

S288P

Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
Contextual Info: Tem ic Semiconductors Physics and Technology Emitters Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemen­ tal semiconductor silicon. the compound III-V semiconductors consists of two different elements of

RPT-37PB3F

Abstract: SIR-34ST3F
Contextual Info: RPT-37PB3F Sensors Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.

High Precision Thin Metal Film Measurement by Optical Transmission

Contextual Info: High Precision Thin Metal Film Measurement by Optical Transmission Kezia Cheng, Bing Hui Li Skyworks Solutions, Inc. 20 Sylvan Road, Woburn, MA, 01801, kezia.cheng@skyworksinc.com Keywords: optical transmission, thin metal film, absorbing film, enhancement mode pHEMT

Contextual Info: Optical disc ICs Post amplifier applicable with 1- bit D / A converter BH3563FV The BH3563FV is a post amplifier applicable with 1-bit D / A converter for compact disc players. FApplications Portable CD players, etc. FFeatures 1 2-channel analog filter IC for 1-bit D / A converters.

Contextual Info: Optical disc ICs 4-channel BTL driver for CD players BA6797FP / BA6797FM The BA6797FP and BA6797FM are 4-channel BTL power drivers for CD players and each have an internal 5V regulator requires attached PNP transistor . Because the input stage of each driver channel connects to an operational amplifier,

RLD65PZB5

Abstract: laser diode DVD 100mw
Contextual Info: RLD65PZB5 Laser Diodes DVD-Record, High power red laser diode RLD65PZB5 The RLD65PZB5 is the red high-output semiconductor laser developed since it corresponded to the high speed needs of the optical pick up for DVD record. zExternal dimensions Unit : mm

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

phototransistor application lux meter

Abstract: BPW21 APPLICATION NOTE BpW34 pad OSRAM ICM 10 BPW20RF BPW21R osram BPW34 osram 80085 smoke detector using phototransistor high speed uv phototransistor
Contextual Info: VEMT4700 Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: surface mount • Package form: PLCC-3 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation

RLD65NZT1

Contextual Info: RLD65NZT1 Laser Diodes Barcode, printer red laser diode RLD65NZT1 For Barcode, Laser Printer. The product is the single power supply drive type which realized low threshold current and the good temperature characteristic. !Applications Barcode readers Printers

multilayer lithography ic fabrication

Abstract: Jewell Instruments
Contextual Info: EUV Lithography—The Successor to Optical Lithography? John E. Bjorkholm Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation Index words: EUV lithography, lithography, microlithography Abstract This paper discusses the basic concepts and current state

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SIR-505STA47

Contextual Info: Sensors Infrared light emitting diode, top view type SIR-505STA47 The SIR-505STA47 is optimal for tape-end sensors in VTR’s and other equipment. It can be directly mounted on a printed circuit board. FApplications VCR’s, Optical control equipment FFeatures

Photo interrupter application notes

Abstract: RPI-124 OPTICAL INTERRUPTER position ROHM RPI rohm floppy
Contextual Info: Sensors Photo interrupter, double-layer mold type RPI-124 The RPI-124 is an ultra-small size, double–layer mold photointerrupter. FExternal dimensions Units: mm FApplications Optical control equipment Cameras Floppy disk drives FFeatures 1) Ultra-small.

RPI-121

Abstract: Photointerrupter application notes
Contextual Info: Sensors Photointerrupter, double-layer mold type RPI-121 The RPI-121 is an ultra-small size, double–layer mold photointerrupter. FApplications Optical control equipment Cameras Floppy disk drives FFeatures 1 Ultra-small. 2) Minimal influence from stray light.

SIR-568ST3F

Contextual Info: SIR-568ST3F Sensors Infrared light emitting diode, top view type SIR-568ST3F The SIR-568ST3F has the response speed and luminous output necessary for image transmission in audio-visual applications. It can support almost all types of optical transmission through air, including audio and data transmission. The

near IR sensors with daylight filter

Abstract: light sensing circuit project BPW34 application note BPW20RF
Contextual Info: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm

BPW20RF

Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation